Measurements of Hall effect properties at different of annealing temperature have been made on polycrystalline Pb0.55S0.45 films were prepared at room temperature by thermal evaporation technique under high vacuum 4*10-5 torr . The thickness of the film was 2?m .The carrier concentration (n) was observed to decrease with increasing the annealing temperature. The Hall measurements showed that the charge carriers are electrons (i.e n-type conduction). From the observed dependence on the temperature, it is found that the Hall mobility (µH), drift velocity ( d) carrier life time ( ), mean free path (?) were increased with increasing annealing temperature
Zinc oxide (ZnO) nanostructures were synthesized through the hydrothermal method at various conditions growth times (6,7 and 8 hrs.) and a growth temperature (70, 90, and 100 ºC). The prepared ZnO nanostructure samples were described using scanning electron microscopy (SEM) and X-ray diffractometer to distinguish their surface morphologies and crystal structures. The ZnO samples were confirmed to have the same crystal type, with different densities and dimensions (diameter and length). The obtained ZnO nanostructures were used to manufacture gas sensors for NO2 gas detection. Sensing characteristics for the fabricated sensor to NO2 gas were examined at different operating temperatures (180, 200, 220, and 240) ºC with a low gas concentrati
... Show MoreGlobal climate change has shown to have a significant impact on critical ecosystems, that in turn has led to elevated CO2 and temperatures that accompany changes in many abiotic factors, including mangrove forests, facing challenges in their habitat. This study conducted to investigate the morphological and physiological characteristic of the mangrove Rhizophora apiculata in response to elevated CO2 concentration and air temperature for the selection of tree species that are able to adapt to climate change. The seedlings were grown in controlled growth chambers with two temperatures, 21 and 38°C, under elevated CO2 at 650 ppm for three months. The plants watered with two liters of saline water
... Show MoreThe determination of critical micelle concentration of selected non-ionic surfactants (Tween 20,40 and 80) have been investigated using magnetic water(MW)as an aqueous medium.Conductometry technique is used to determine critical micelle concentration.The effect of alcohol addition and temperature variation at the range(293.15 -303.15K) are also pursued. It is concluded that the process of micellization is spontaneous and endothermic because of the observed free energy of micellization (ΔGom) , enthalpy change of micellization (ΔHom), and entropy change of micellization (ΔSom) for the system was also studied.The properties of the non-ionic surfactants were studied, both in absence and presence of
... Show MoreIn this study the as-deposited and heat treated at 423K of conductive blende graphene oxide (GO) / poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) thin films was prepared with different PEDOT:PSS concentration (0, 0.25, 0.5, 0.75 and 1.0)wt% on pre-cleaned glass substrate by spin coating technique. The energy dispersive X-ray Analysis (EDX) show the existence of higher amount of carbon and oxygen related to hydroxyl and carbonyl groups. X-ray diffraction (XRD) analysis of the as-deposited and annealed GO/PEDOT:PSS thin films blend indicated that the film prepared show broad peak around 8.24 corresponding to the (001) level refers to GO, this peak shifted to the lower 2θ with increasing PEDOT:PSS concentr
... Show MoreABSTRACT:In this paper, Cd10–xZnxS (x = 0.1, 0.3, 0.5) films were deposited by using chemical spray pyrolysis technique, the molar concentration precursor solution was 0.15 M/L. Depositions were done at 350°C on cleaned glass substrates. X-ray dif- fraction technique (XRD) studies for all the prepared film; all the films are crystalline with hexagonal structure .The optical properties of the prepared films were studied using measurements from VIS-UV-IR spectrophotometer at wave- length with the range 300 - 900 nm; the average transmission of the minimum doping ratio (Zn at 0.1%) was about 55% in the VIS region, it was decrease at the increasing of Zn concentration in the CdS films, The band gap of the doped CdS films was varied as 3.7, 3
... Show MoreIn this research, we studied the structural properties of SnO2 films nanostructure which prepared by chemical spray pyrolysis method at room temperature on the rules of glass heated (400oC) with rate of spraying (2.5 ml/ min). The effect of annealing temperaturs (450,500,550,600 and 650oC) for two hours on those properties has been indicated. The results of x-ray diffraction showed that all of the prepared films were polycrystalline with tetragonal type and orientation was (110) for all models before and after annealing, and the annealing led to an increase in the grain size. The full width at half maximum (FWHM) values of the (110) peaks of the films decreased from 1.492o to 1.064o with increasing annealing temperature .The surface morp
... Show Morea-Ge: As thin films have prepared by thermal evaporation teclmique, then they were annealing at various temperatures within the
range (373-473) K. The result of X-ray di ffraction spectrum was showing that all the specimens remained in amorphous structure before and after annealing process. This paper studied the effect of annealing temperature as a function of wavelength on the optical energy gap and optical constants for the a-Ge:As thin films . Results have showed that there was an increasing in the optical energy gap
{Egopt) values with the in ,;rcasing of the annealing temperatures within
... Show MoreThe electrical properties of polycrystalline cadmium telluride thin films of different thickness (200,300,400)nm deposited by thermal evaporation onto glass substrates at room temperature and treated at different annealing temperature (373, 423, 473) K are reported. Conductivity measurements have been showed that the conductivity increases from 5.69X10-5 to 0.0011, 0.0001 (?.cm)-1 when the film thickness and annealing temperature increase respectively. This increasing in ?d.c due to increasing the carrier concentration which result from the excess free Te in these films.