Porous silicon (P-Si) has been produced in this work by photoelectrochemical (PEC) etching process. The irradiation has been achieved using diode laser of (2 W) power and 810 nm wavelength. The influence of various irradiation times on the properties of P-Si material such as P-Si layer thickness, surface aspect, pore diameter and the thickness of walls between pores as well as porosity and etching rate was investigated by depending on the scanning electron micrograph (SEM) technique and gravimetric measurements.
In this paper, the performance of a silicon cell with a Fresnel lens (FL) for building a solar photovoltaic concentrator system was evaluated; the solar concentrator is a Fresnel lens, which is a point concentrator made of polymethyl-methacrylate (PMMA) as a thin lens for the optics system.
As the radiation from the sun on the solar cell is concentrated to the levels of solar radiation of 750, 1300, 1930, 2600, 4250, 7250, and 10500) W/m2, the work was conducted at the midday in summer weather conditions, with ambient temperatures ranging 40-45 °C. The evaluation was performed in three cases; each case was conducted in succession. The performance of the cell was evaluated first wit
... Show MoreAs part of our research on efficiency improvement of PERC (Passivated Emitter Rear Solar Cell), achieving very low reflectivity values of solar cell surface is a must. One of the most advance technologies to do so is the use of advanced texturing for the front surface of the cells. This texture, also known as Black Silicon, consists of peaks and valleys of nano metric dimensions and capable of dramatically reducing the reflectance of the front surface. A reflectance around 5% was reached ,using simulation, when using a Black-Silicon texturing with height of 50nm with peak rounding of 5nm. Even though this texturing may affect other parameters such as series resistance or surface recombination, as a starting point
... Show MoreSingle crystals of pure and Cu+2,Fe+2 doped potassium sulfate were grown from aqueous solutions by the slow evaporation technique at room temperature. with dimension of (11x9 x4)mm3 and ( 10x 8x 5)mm3 for crystal doping with Cu &Fe respectively. The influence of doping on crystal growth and its structure revealed a change in their lattice parameters(a=7.479 Ã… ,b=10.079 Ã… ,c=5.772 Ã…)for pure and doping (a=9.687 Ã…, b=14.926 Ã… ,c= 9.125 Ã…) & (a=9.638 Ã… , b= 8.045 Ã… ,c=3.271 Ã…) for Cu & Fe respectively. Structure analysis of the grown crystals were obtained by X-Ray powder diffraction measurements. The diffraction patterns were analyzed by the Rietveld refinement method. Rietveld refinement plo
... Show MoreThe effect of water stress induced by using polyethylene glycol (PEG-6000) on germination of seeds and growth of seedlings of Silybum marianum was studied. Two concentrations of PEG were used to get two water stresses (-0.4 & -0.8 bar) as well as the control for comparison. The results showed a significant decrease (P<0.05) in germination ratio compared with the control. The ratio did not slow down to less than 50% which indicates the ability of the seeds to resist water stress to some extent. Also, a significant decrease (P<0.05) in the length of shoot and root was observed compared with the control. This plant showed
... Show MoreIn this paper, we built a mathematical model for convection and thermal radiation heat transfer of fluid flowing through a vertical channel with porous medium under effects of horizontal magnetic field (MF) at the channel. This model represents a 2-dimensional system of non-linear partial differential equations. Then, we solved this system numerically by finite difference methods using Alternating Direction Implicit (ADI) Scheme in two phases (steady state and unsteady state). Moreover, we found the distribution and behaviour of the heat temperature inside the channel and studied the effects of Brinkman number, Reynolds number, and Boltzmann number on the heat temperature behaviour. We solved the system by buildi
... Show MoreThis research aims to design a high-speed laser diode driver and photodetector, the result is the
design of the high-speed laser diode driver with a short pulse of 10 ns at 30 KHz frequency and the
delivered maximum pulse voltage is 5.5 mV. Also, its optical output power of the laser diode driver is
about 2.529 mW for the centroied wavelength 1546.7 nm with FWHM of 286 pm and (1270-1610) nm.
The design of the circuit based on bipolar transistor where the input pulse signal is simply generated by
an arduino kit with 15 kHz frequency and then compensated to trigger to small signal amplifier which
was is simply NPN C3355 transistor and the output is a current driver to the laser diode. OptiSystem
software and Electronic
Lasers, with their unique characteristics in terms of excellent beam quality, especially directionality and coherency, make them the solution that is key for many processes that require high precision. Lasers have good susceptibility to integrate with automated systems, which provides high flexibility to reach difficult zones. In addition, as a processing tool, a laser can be considered as a contact-free tool of precise tip that became attractive for high precision machining at the micro and nanoscales for different materials. All of the above advantages may be not enough unless the laser technician/engineer has enough knowledge about the mechanism of interaction between the laser light with the processed material. Several sequential phenom
... Show MoreSingle-photon detection concept is the most crucial factor that determines the performance of quantum key distribution (QKD) systems. In this paper, a simulator with time domain visualizers and configurable parameters using continuous time simulation approach is presented for modeling and investigating the performance of single-photon detectors operating in Gieger mode at the wavelength of 830 nm. The widely used C30921S silicon avalanche photodiode was modeled in terms of avalanche pulse, the effect of experiment conditions such as excess voltage, temperature and average photon number on the photon detection efficiency, dark count rate and afterpulse probability. This work shows a general repeatable modeling process for significant perform
... Show MoreIn this paper a stirred-bed performed of the copper catalyzed synthesis of ethylchlorosilanes from silicon and ethyl chloride was described. A Si-catalyst mixture prepared by reaction of CuCl and Si was employed. The compositions of products were mainly ethyltrichlorosilane, diethyldichlorosilane, and ethyldichlorosilane and mainly depended on the extent of Cu in the mixture and the reaction temperature. A promoting effect on the extent of adsorption was observed on the addition of certain additives. The kinetic data revealed the direct depended of the reaction rate on C2H5Cl pressure.
In the present work, the feasibility of formation near-ideal ohmic behavior of In/n-Si contact efficiently by 300 s duration Nd:YAG pulsed laser processing has been recognized. Several laser pulses energy densities have been used, and the optimal energy density that gives best results is obtained. Topography of the irradiated region was extensively discussed and supported with micrographic illustrations to determine the surface condition that can play the important role in the ohmic contact quality. I-V characteristics in the forward and reverse bias and barrier height measurements have been studied for different irradiated samples to determine the laser energy density that gives best ohmic behavior. Comparing the current results with
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