Most of the Weibull models studied in the literature were appropriate for modelling a continuous random variable which assumes the variable takes on real values over the interval [0,∞]. One of the new studies in statistics is when the variables take on discrete values. The idea was first introduced by Nakagawa and Osaki, as they introduced discrete Weibull distribution with two shape parameters q and β where      0 < q < 1 and b > 0. Weibull models for modelling discrete random variables assume only non-negative integer values. Such models are useful for modelling for example; the number of cycles to failure when components are subjected to cyclical loading. Discrete Weibull models can be obta

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Density functional theory (DFT) with B3LYP level and 6-311G[Formula: see text] basis sets for light atoms like N and O and SDD basis sets for heavy atoms like Sn is used to examine the interaction of tin dioxide nanocrystals with nitrogen dioxide as a function of temperature from 273[Formula: see text]K to 373[Formula: see text]K through a Gaussian 09W software program. Gibbs free energy, enthalpy, and entropy of activation and reaction are calculated. The situation of transition of SnO₂ clusters toward nitrogen dioxide is investigated. According to the findings, the activation energy of SnO₂ clusters with nitrogen dioxide increases as the temperature rises (in negative value). Gauss view 0

In this work the diode planer magnetron sputtering device was
designed and fabricated. This device consists of two aluminum discs
(8cm) diameter and (5mm) thick. The distance between the two
electrodes is 2cm, 3cm, 4cm and 5cm.
Design and construction a double probe of tungsten wire with
(0.1mm) diameter and (1.2mm) length has been done to investigate
electron temperature, electron and ion density under different
distances between cathode and anode. The probes were situated in
the center of plasma between anode and cathode.
The results of this work show that, when the distance between
cathode and anode increased, the electron temperature decreased.
Also, the electron density increases with the increasing

In this work, we studied the effect of power variation ​​on inductively coupled plasma parameters using numerical simulation. Different values ​​were used for input power (750 W-1500 W), gas temperature 300K, gas pressure (0.02torr),         5 tourns of the copper coil and the plasma was produced at radio frequency (RF) 13.56 MHZ on the coil above the quartz chamber. For the previous purpose, a computer simulation in two dimensions axisymmetric, based on finite element method, was implemented for argon plasma. Based on the results we were able to obtain plasma with a higher density, which was represented by obtaining the plasma parameters (electron density, electric potential, total power, number density of argon ions, el

Abstract

       The current study was carried out to reveal the plasma parameters such as ,the electron temperature ( ), electron density (n_e) , plasma frequency (fp), Debye length ( ) , Debye number (   for  CdS to employ the LIBS for the purpose of analyzing and determining spectral emission lines using . The results of electron temperature for CdS range (0.746-0.856) eV , the electron density(3.909-4.691)×10¹⁸ cm^-3. Finally ,we discuss plasma parameters of CdS  through  nano second  laser generated plasma .

Semiconductor laser is used in processing many issues related to the scientific, military, medical, industrial and agricultural fields due to its unique properties such as coherence and high strength where GaN-based components are the most efficient in this field. Current technological developments mention to the strong connection of GaN with sustainable electronic and optoelectronic devices which have high-efficiency. The threshold current density of Al0.1Ga0.9N/GaN triple quantum well laser structure was investigated to determine best values of the parameters affecting the threshold current density that are well width, average thickness of active region, cavity length, reflectivity of cavity mirrors and optical confinement factor. The opt