Thin filis have been prepared from the tin disulphide (SnS2 ), the pure and the doped with copper (SnS2:Cu) with a percentages (1,2,3,4)% by using ahemical spray pyrolysis techniqee on substrate of glass heated up to(603K)and sith thicknesses (0.7±0.02)?m ,after that the films were treated thermally with a low pressure (10-3mb) and at a temperature of (473K) for one hour. The influence of both doping with copper and the thermal treatment on some of the physical characteristics of the prepared films(structural and optical) was studied. The X-ray analysis showed that the prepared films were polycrystalline Hexagonal type. The optical study that included the absorptance and transmitance spectra in the weavelength range (300-900)nm demonstrated that the value of absorption coefficient (?) was greater than (104 cm-1) for the pure and doped films and that the electronic transitions at the fundamental absorption edge were of the indirect kind whether allowed or forbidden and the value of the optical energy gap in the case of the indirect transition, the allowed decreased from (2 eV) to (1.8,1.7,1.5,1.2)eV at the doping percentages (1,2,3,4)% respectively, also it was found that the value of energy gap for the pure and doped films increased after annealing. Tthe absorption and transmission spectra were used to find the optical constant including refractive index(n), extinction coefficient (k), imaginary and real part of dielectric constant (?1 &?2) , and it was found that all the optical constant was affected by changing the doping percentages; in addition to being affected after treating the films thermally
The prepared nanostructure SiO2 thin films were densified by two techniques (conventional and Diode Pumped Solid State Laser (DPSS) (532 nm). X-ray diffraction (XRD), Field Emission Scanning electron microscopy (FESEM), and Atomic Force Microscope (AFM) technique were used to analyze the samples. XRD results showed that the structure of SiO2 thin films was amorphous for both Oven and Laser densification. FESEM and AFM images revealed that the shape of nano silica is spherical and the particle size is in nano range. The small particle size of SiO2 thin film densified by DPSS Laser was (26 nm) , while the smallest particle size of SiO2 thin film densified by Oven was (111 nm).
The photo-electrochemical etching (PECE) method has been utilized to create pSi samples on n-type silicon wafers (Si). Using the etching time 12 and 22 min while maintaining the other parameters 10 mA/cm2 current density and HF acid at 75% concentration.. The capacitance and resistance variation were studied as the temperature increased and decreased for prepared samples at frequencies 10 and 20 kHz. Using scanning electron microscopy (SEM), the bore width, depth, and porosity % were validated. The formation of porous silicon was confirmed by x-ray diffraction (XRD) patterns, the crystal size was decreased, and photoluminescence (PL) spectra revealed that the emission peaks were centered at 2q of 28.5619° and 28.7644° for et
... Show MoreCdS and CdTe thin films were thermally deposited onto glass substrate. The CdCl2 layer was deposited onto CdS surface. These followed by annealing for different duration times to modify the surface and interface of the junction. The diffraction patterns showed that the intensity of the peaks increased with the CdCl2/annealed treatment, and the grain sizes are increased after CdCl2/annealed treatment
The annealing temperature (200–500 °C) effects of optical frequency response on the dielectric functions of sol–gel derived CuCoO
Optical detector was manufactured Bashaddam thermal evaporation technique at room temperature under pressure rays studied characteristics of reactive Scout efficiency quantitative ratio of the signal and the ability equivalent to noise
The present research had dealt with preparing bars with the length of about (13 cm) and adiametar of (1.5 cm) of composite materials with metal matrix represented by (Al-Cu-Mg) alloy cast enforced by (ZrO2) particles with chosen weight percentages (1.5, 2.5 ,3.5, 5.5 %). The base cast and the composite materials were prepared by casting method by uses vortex Technique inorder to fix up (ZrO2) particles in homogeneous way on the base cast. In addition to that, two main groups of composite materials were prepared depending on the particles size of (ZrO2) , respectively. &n
... Show More