Sludge from stone-cutting (SSC) factories and stone mines cannot be used as decorative stones, stone powder, etc. These substances are left in the environment and cause environmental problems. This study aim is to produce artificial stone composite (ASC) using sludge from stone cutting factories, cement, unsaturated resin, water, silicon carbide nanoparticles (SiC-NPs), and nano-graphene oxide (NGO) as fillers. Nano graphene oxide has a hydrophobic plate structure that water is not absorbed due to the lack of surface tension on these plates. NGO has a significant effect on the properties of artificial stone due to its high specific surface area and low density in the composite. Its uniform distribution in ASC is very low due to its hydropho

Tin dioxide doped silver oxide thin films with different x content (0, 0.03, 0.05, 0.07) have been prepared by pulse laser deposition technique (PLD) at room temperatures (RT). The effect of doping concentration on the structural and electrical properties of the films were studied. Atomic Force Measurement (AFM) measurements found that the average value of grain size for all films at RT decrease with increasing of AgO content. While an average roughness values increase with increasing x content. The electrical properties of these films were studied with different x content. The D.C conductivity for all films increases with increasing x content. Also, it found that activation energies decrease with increasing of AgO content for all films.

Stability of laminated plate under thermal load varied linearly along thickness, is developed using a higher order displacement field which depend on a parameter “m”, whose value is optimized to get results closest to three-dimension elasticity results. Hamilton, s principle is used to derive equations of motion for laminated plates. These equations are solved using Navier-type for simply supported boundary conditions to obtain non uniform critical thermal buckling and fundamental frequency under a ratio of this load. Many design parameters of cross ply and angle ply laminates such as, number of layers, aspect ratios and E1/E2 ratios for thick and thin plates are investigated. It is observed that linear and uniform distribution of

Aluminum doped zinc selenide ZnSe/n-Si thin films of (250∓20 nm) thickness with (0.01, 0.02 and 0.03), are depositing on the two type of substrate (glass and n-Si) to manufacture (ZnSe/n-Si) solar cell through using thermal vacuum evaporation procedure. physical and optoelectronic properties were examined for the samples. X-Ray and AFM techniques are using to study the structure properties. The energy band gap of as-deposited ZnSe thin films for changed dopant ratio were ranging from (2.6-2.68 eV). The results of Hall effect show that pure and doping films were (p-type), and the concentration carriers and the carriers mobility increases with increase Al-dopant ratio. The (C-V) have shown that the heterojunction were of abrupt type. In add

The aim of this study was to evaluate tensile properties of low and medium carbon ferrite -martensite dual phase steel, and the effect cryogenic treatment at liquid nitrogen temperature (-196 ºC) on its properties. Low carbon steel (C12D) and medium carbon steels (C32D & C42D) were used in this work. For each steel grade, five groups of specimens were prepared according to the type of heat treatment. The first group was normalized, the second group was normalized and subsequently subjected to cryogenic treatment then tempered at (200 ºC) for one hour, the third group was quenched from intercritical annealing temperature of (760 ºC) to obtain dual phase (DP) steel, the fourth and fifth groups were both quenched from (760 ºC), but

CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.

During of Experimental result of this work , we found that the change of electrical conductivity proprieties of tin dioxide with the change of gas concentration at temperatures 260oC and 360oC after treatment by photons rays have similar character after treatment isothermally. We found that intensive short duration impulse annealing during the fractions of a second leads to crystallization of the films and to the high values of its gas sensitivity.