To enhance interfacial bonding between carbon fibers and epoxy matrix, the carbon fibers have been modified with multiwall carbon nanotubes (MWCNTs) using the dip- coating technique. FT-IR spectrum of the MWCNTs shows a peak at 1640 cm−1 corresponding to the stretching mode of the C=C double bond which forms the framework of the carbon nanotube sidewall. The broad peak at 3430 cm−1 is due to O–H stretching vibration of hydroxyl groups and the peak at 1712 cm−1 corresponds to the carboxylic (C=O) group attached to the carbon fiber. The peaks at 2927 cm−1 and 2862 cm−1 are assigned to C–H stretching vibration of epoxy produced at the defect sites of acid-oxidized carbon fiber surface. SEM image shows a better interface bonding between the fiber and the matrix of modified composites (MWCNTs-CF/Ep) than those of unmodified composite. The loss factor curve of CF-MWCNTs/Ep composites is the narrowest compared with neat epoxy and CF/Ep composites which evinces that the length distribution range of molecular chain segments in the matrix is the narrowest. From the dependence of the AC conductivity on temperature, we can see that σAC increases when temperature increases. The increase in electrical conductivity of the composites may be a result of the increased chain ordering due to annealing effect. The use of MWCNTs to modify the surface of carbon fiber resulted in a large amount of junctions among MWCNT causing an increase in the electrical and thermal conductivity by forming conducting paths in the matrix. The MWCNTs-CF/Ep composite shows better thermal stability than unmodified composites. The strong interaction between CF and MWCNTs can retard diffusion of small molecules from the resin matrix at high temperature and hence, result in the improved thermal stability of the modified CF/Ep composite.
In this work, we are Study the effect of annealing temperature on the structure of a-Ge films doped with Sb and the electrical properties of a-Ge:Sb/c-Si heterojunction fabricated by deposition of a-Ge:Sb film on c-Si by using thermal evaporation. Electrical properties of aGe:Sb/c-Si heterojunction include I-V characteristics in dark at different annealing temperatures and C-V characteristics and with the C-V characteristics suggest that the fabricated heterojunction was abrupt type, built in potential determined by extrapolation from 1/C2-V curve and show that the built - inpotential (Vbi) for the Ge:Sb/Si system increases with the increase of annealing temperatures
Ceramics type Yttrium oxide with Silicon carbide. were selected to investigate its sintered density, microstructure and electrical properties, after adding V2O5, of 100 nm grain size. Different weight percentages ranging from (0.01,0.02,0.03 and 0.04) were used. Dry milling applied for twelve hours. The pelletized samples were sintered at atmospheric of static air and at sintering temperature 1400 ˚C, for three hours. The crustal structure test shoes the phase which is yttrium silicon carbide Scanning electron microscopy, scan sintered microstructure. Samples after sintering were electrically investigated by measuring its capacitance, dielectric constant and their results showed increasing after added V2O5 particles at the combinat
... Show MoreThe present work aimed to study the efficiency of thermal osmosis process for recovery of water from organic wastewater solution and study the factors affecting the performance of the osmosis cell. The driving force in the thermo osmosis cell is provided by a difference in temperature across the membrane sides between the draw and feed solution. In this research used a cellulose triacetate (CTA), as flat sheet membranes for treatment of organic wastewater under orientation membrane of active layer facing feed solution (FS) and draw solution (DS) is placed against the support layer. The organic materials were phenol, toluene, xylene and BTX (benzene, toluene, and xylene) used as feed solution. The osmotic agent in draw solution was
... Show MoreIn this work, Pure and Cu: doped titanium dioxide nano-powder was prepared through a solid-state method. the dopant concentration [Cu/TiO2 in atomic percentage (wt%)] is derived from 0 to 7 wt.%. structural properties of the samples performed with XRD revealed all nanopowders are of titanium dioxide having polycrystalline nature. Physical and Morphological studies were conducted using a scanning electronic microscope SEM test instrument to confirm the grain size and texture. The other properties of samples were examined using an optical microscope, Lee's Disc, Shore D hardness instrument, Fourier-transform infrared spectroscopy (FTIR), and Energy-dispersive X-ray spectroscopy (EDX). Results showed that the thermal conductivity
... Show MoreThe thermal stability of previously prepared tetraphenanthroporphyrazine (TPPH2) and its complexes with VO(IV) , Co(II) , Cu(II) , Zn(II) , Mg(II) , Ca (II) ions were studied by thermogravimetric analysis (TG & DTG) at temperature range (20-1000oC). The results indicated that these compounds have a high thermal stability comparable to those of phthalocyanine compounds (PC) and higher than those of hemiporphyrazine compounds (HP) . In general metal complexes were more stable than parent ligand . Data of magnetic susceptibility and electrical conductivity were also obtained as further support for the studied compoundes .
six specimens of the Hg0.5Pb0.5Ba2Ca2Cu3-y