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Abstract. Silver, Indium Selenium thin film with a thickness (5001±30) nm, deposited by thermal evaporation methods
at RT and annealing3temperature (Ta=400, 500 and 600) K on a substrate of glass to study structural and optical
properties of thin films and on p-Si wafer to fabricate the AgInSe2/p-Si heterojunction solar cell. XRD analysis shows
that the AgInSe2 (AIS) deposited film at RT and annealing3temperature (Ta=400, 500 and 600) K have polycrystalline
structure. The average grain size has been estimated from AFM images. The energy gap was estimated from the optical
transmittance using a spectrometer type (UV.-Visible 1800 spectra photometer). From I-V characterization , the
photovoltaic parameters such as, open-circuit voltage, short
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