ZnO-nanoflowers on a transparent conductive tin-doped In2O3 (ITO) glass substrate have been successfully prepared via a simple and efficient growth approach that is combining of dip coating and hydrothermal processes. One thin layer of ZnO nanoparticles is prepared by dip coating method followed by hydrothermally grown of ZnO nanoflowers at low temperature. The morphology and structure of ZnO-nanoflowers were inspected by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD), respectively. The optical absorption and photoluminescence spectra of ZnO-nanoflowers are also investigated. The ZnO-nanoflowers photoanode shows dramatically contributed to the separation of electron-hole pairs and enhanced the photoresponse. The photocurrent density is 0.44 mA/cm2 indicated that the PEC cells based on ZnO-nanoflowers photoanode have promising application potential in overall solar energy.
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The mechanism of hydrogen (H2) gas sensor in the range of 50-200 ppm of RF-sputtered annealed zinc oxide (ZnO) and without annealing was studied. The X-ray Diffraction( XRD) results showed that the Zn metal was completely converted to ZnO with a polycrystalline structure. The I–V characteristics of the device (PT/ZnO/Pt) measured at room temperature before and after annealing at 450 oC for4h, from which a linear relationship has been observed. The sensors had a maximum response to H2 at 350 oC for annealing ZnO and showed stable behavior for detecting H2 gases in the range of 50 to 200 ppm. The annealed film exhibited hig |
Construction of photographed bullying scale of kindergarteners was the aim of this study. The study conducted to answer the raised question, could the bullying among kindergarteners be measured?. A total of (200) boy and girl were selected from city of Baghdad to be the sample of the study. The scale composed of (27) item with colored pictures. It takes about (15) minuets to answer the whole scale items. SPSS tools were used to process the collected data. The result showed that the bullying among kindergarteners could be measured.
In this work, ZnO quantum dots (Q.dots) and nanorods were prepared. ZnO quantum dots were prepared by self-assembly method of zinc acetate solution with KOH solution, while ZnO nanorods were prepared by hydrothermal method of zinc nitrate hexahydrate Zn (NO3)2.6H2O with hexamethy lenetetramin (HMT) C6H12N4. The optical , structural and spectroscopic properties of the product quantum dot were studied. The results show the dependence of the optical properties on the crystal dimension and the formation of the trap states in the energy band gap. The deep levels emission was studied for n-ZnO and p-ZnO. The preparation ZnO nanorods show semiconductor behavior of p-type, which is a difficult process by doping because native defects.
The CIGS/CdS p-n junction thin films were fabricated and deposited at room temperature with rate of deposition 5, and 6 nm secG1 , on ITO glass substrates with 1mm thickness by thermal evaporation technique at high vacuum pressure 2×10G5 mbar, with area of 1 cm2 and Aluminum electrode as back contact. The thickness of absorber layer (CIGS) was 1 µm while the thickness of the window layer CdS film was 300 nm. The X-ray Diffraction results have shown that all thin films were polycrystalline with orientation of 112 and 211 for CIGS thin films and 111 for CdS films. The direct energy gaps for CIGS and CdS thin films were 1.85 and 2.4 eV, respectively. Atomic Force Microscopy measurement proves that both films CIGS and CdS films have nanostru
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