Copper with different concentrations doped with zinc oxide nanoparticles were prepared from a mixture of zinc acetate and copper acetate with sodium hydroxide in aqueous solution. The structure of the prepared samples was done by X-ray diffraction, atomic force microscopy (AFM) and UV-VIS absorption spectrophotometer. Debye-Scherer formula was used to calculate the size of the prepared samples. The band gap of the nanoparticle ZnO was determined by using UV-VIS optical spectroscopy.

This research focuses on improving the photoelectrochemical performance of binary heterostructure Ag2S/ZnO NRs/ITO by manipulating synthesis conditions, particularly the concentrations of sliver nitrate AgNO3 and thiourea CS(NH2)2. The photoelectrochemical performance of Ag2S/ZnO nanorods on indium tin oxide (ITO) nanocomposite was compared to pristine ZnO NRs/ITO photoanode. The hydrothermal technique, an eco-friendly, low-cost method, was used to successfully produce Ag2S/ZnO NRs at different concentrations of AgNO3 and CS(NH2)2. The obtained thin films were characterized using field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), ultraviolet-visible spectroscopy

A metal-assisted chemical etching process employing p-type silicon wafers with varied etching durations is used to produce silicon nanowires. Silver nanoparticles prepared by chemical deposition are utilized as a catalyst in the formation of silicon nanowires. Images from field emission scanning electron microscopy confirmed that the diameter of SiNWs grows when the etching duration is increased. The photoelectrochemical cell's characteristics were investigated using p-type silicon nanowires as working electrodes. Linear sweep voltammetry (J-V) measurements on p-SiNWs confirmed that photocurrent density rose from 0.20 mA cm^-2 to 0.92 mA cm^-2 as the etching duration of prepared SiNWs increased from 15 to 30 min. The