Background: Cartilage forms most of the temporary skeleton of the embryo and provides a model in which most bones develop Objective: Using laser therapy to enhance autologous cartilage grafts expansibility and to analyze whether this "enhancement" results in reduced rates of cartilage resorption and greater preservation of normal architectural features compared with "unenhanced" grafts. Type of the study: Cross sectional study. Methods: 24 New Zealand rabbits were divided into two groups (control and treated with 904nm, 10mW diode laser). Auricular cartilage segments measuring 1 cm2 were harvested from both ears of each rabbit, and were implanted in to the subcutaneous region of the left flank. 3 rabbits from each group were anaesthetized at 3, 6, 9 and 12 weeks post operation, implanted cartilages were then peeled. Gross and microscopic examinations were performed to assess size, structural integrity, and architectural features, with comparisons performed between each of the conditions. The results were assessed using T – test. Results: Grafts of control group were softer, more pliable when compared with grafts treated with laser irradiation. The rate of healing, and the quality of the cartilage is more enhanced in the treated group. The mean areas of the harvested cartilage grafts treated with laser therapy were 1.17 cm2 , 1.34 cm2 , 1,64 cm2 and 1.76 cm2 respectively, while the corresponding value for the untreated specimens was 0.95 cm2 , 0,99 cm2, 1.05 cm2 and 1.08 cm2. The percentage of decrease in size was 14% for the untreated specimens and 0% for the specimens treated with laser therapy for all cases. Conclusions: Our findings demonstrated significant improvements in graft quality using laser therapy. These findings may justify changes in how cartilage grafts are prepared and delivered for facial augmentation procedures to reduce graft resorption and maintain the structural integrity of the cartilage.
This work concerns the synthesis of two types of composites based on antimony oxide named (Sb2O3):(WO3, In2O3). Thin films were fabricated using pulsed laser deposition. The compositional analysis was explored using Fourier transform infrared spectrum (FTIR), which confirms the existence of antimony, tungsten, and indium oxides in the prepared samples. The hall effect measurement showed that antimony oxide nanostructure thin films are p-type and gradually converted to n-type by the addition of tungsten oxide, while they are converted almost instantly to n-type by the addition of indium oxide. Different heterojunction solar cells were prepared from (Sb2O3:WO
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In the present work, pulsed laser deposition (PLD) technique was applied to a pellet of Chromium Oxide (99.999% pure) with 2.5 cm diameter and 3 mm thickness at a pressure of 5 Tons using a Hydraulic piston. The films were deposited using Nd: YAG laser λ= (4664) nm at 600 mJ and 400 number of shot on a glass substrate, The thickness of the film was (107 nm). Structural and morphological analysis showed that the films started to crystallize at annealing temperature greater than 400 oC. Absorbance and transmittance spectra were recorded in the wavelength range (300-
4400) nm before and after annealing. The effects of annealing temperature on absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of d
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Compounds from ZnO doped with AgO in different ratio (0,3,5,7, and 9)wt.% were prepared.Thin films from the prepared compounds were deposited on a glass substrate using the pulsed laser deposition method. The XRD pattern confirmed the presence of a single-phase hexagonal wurtzite ZnO structure, without the presence of a secondary phase. AFM measurements showed an increase in both average grain size and average surface roughness with increasing concentration content of (AgO).The crystallite size of ZnO of the main peak corresponding to the preferred plane of crystal growth named (100) increases from 17.8 to 22.5nm by increasing of AgO doping ratio from 0 to 9%. The absorbance and transmittance in the wavelength range (350-1100 nm) were
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Thin films of ZnO nano crystalline doped with different concentrations (0, 6, 9, 12, and 18 )wt. % of copper were deposited on a glass substrate via pulsed laser deposition method (PLD). The properties of ZnO: Cu thin-nanofilms have been studied by absorbing UV-VIS, X-ray diffraction (XRD) and atomic force microscopes (AFM). UV-VIS spectroscopy was used to determine the type and value of the optical energy gap, while X-ray diffraction was used to examine the structure and determine the size of the crystals. Atomic force microscopes were used to study the surface formation of precipitated materials. The UV-VIS spectroscopy was used to determine the type and value of the optical energy gap.
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AlO-doped ZnO nanocrystalline thin films from with nano crystallite size in the range (19-15 nm) were fabricated by pulsed laser deposition technique. The reduction of crystallite size by increasing of doping ratio shift the bandgap to IR region the optical band gap decreases in a consistent manner, from 3.21to 2.1 eV by increasing AlO doping ratio from 0 to 7wt% but then returns to grow up to 3.21 eV by a further increase the doping ratio. The bandgap increment obtained for 9% AlO dopant concentration can be clarified in terms of the Burstein–Moss effect whereas the aluminum donor atom increased the carrier's concentration which in turn shifts the Fermi level and widened the bandgap (blue-shift). The engineering of the bandgap by low
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Abstract: This study aims to investigate the effects of solvents of various polarities on the electronic absorption and fluorescence spectra of RhB and Rh6G. The singlet‐state excited dipole moments (me) and ground state dipole moments (mg) were estimated from the equations of Bakshiev -Kawski and Chamma‐ Viallet using the variation of Stokes shift along with the solvent’s dielectric constant (e) and refractive indexes (n). The observed singlet‐state excited dipole moments were found to be larger than the ground‐state ones. Moreover, the obtained fluorescence quantum yield values were influenced by the environment of the fluorescing molecule. Consequently, the concentration of the dye solution, excited singlet state absorption and
... Show MoreIn this work, a (CdO)0.94:(In2O3)0.06 film was developed on a glass substrate using Q- switching pulse laser beam (Nd:YAG; wavelength 1064 nm). The quantitative elemental analysis of the (CdO)0.94:(In2O3)0.06 thin film was achieved using energy dispersive X- ray diffraction (EDX). The topological and morphological properties of the deposited thin film were investigated using atomic force microscope (AFM) and field emission scan electron microscopy (FESEM). The I-V characteristic and Hall effect of (CdO)0.94 :(In2O3)0.06 thin films were used to study the electrical properties. The gas sensor prope
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