Semiconductor quantum dots (QDs) have attracted tremendous attentions for their unique characteristics for solid-state lighting and thin-film display applications. A simple chemical method was used to synthesis quantum dots (QDs) of zinc sulfide (ZnS) with low cost. The XRD) shows cubic phase of the prepared ZnS with an average particles size of (3-29) nm. In UV-Vis. spectra observed a large blue shift over 38 nm. The band gaps energy (Eg) was 3.8 eV and 3.37eV from the absorption and photoluminescence (PL) respectively which larger than the Eg for bulk. QDs-LED hybrid devices were fabricated using ITO/ PEDOT: PSS/ Poly-TPD/ ZnS-QDs/ with different electron transport layers and cathode of LiF/Al layers. The EL spectrum reveals a broad emission band covering the range 350 - 700 nm. Current-voltage (I–V) characteristics indicate that the output current is good according to the few voltages (8, 10, 11 and 12 V) used which gives acceptable results to light generation. Using TPBi and Alq3 as electron transport layer gives good enhancement to light generation in compares with that of QDs only. The emissions causing the luminescence were identified depending on the chromaticity coordinates (CIE 1931).
