In this study, the electron energy distribution function (EEDF), the electron swarm parameters , the effective ionization coefficients, and the critical field strength (dielectric strength) in binary He-H₂ gas mixture which is used as cryogenic for high-temperature superconducting power applications,  are evaluated using two-term solution  of the Boltzmann equation over the range of E/N ( the electric field to gas density) from 1 to 100 Td ( 1 Td=10^-17 Vcm²) at temperature 77 K and pressure 2MPa, taking into account elastic ( momentum transfer) and inelastic cross-sections. Using the electron energy distribution function (EEDF) electron swarm parameters (electron drift velocity, mean electron e

We investigated at the optical properties, structural makeup, and morphology of thin films of cadmium telluride (CdTe) with a thickness of 150 nm produced by thermal evaporation over glass. The X-ray diffraction study showed that the films had a crystalline composition, a cubic structure, and a preference for grain formation along the (111) crystallographic direction. The outcomes of the inquiry were used to determine these traits. With the use of thin films of CdTe that were doped with Ag at a concentration of 0.5%, the crystallization orientations of pure CdTe (23.58, 39.02, and 46.22) and CdTe:Ag were both determined by X-ray diffraction. orientations (23.72, 39.21, 46.40) For samples that were pure and those that were doped with

The peristaltic transport of power-law fluid in an elastic tapered tube with variable cross-section induced by dilating peristaltic wave is studied. The exact solution of the expression for axial velocity, radial velocity, stream function, local shear stress, volume of flow rate and pressure gradient are obtained under the assumption of long wavelength and low Reynolds number. The effects of all parameters that appear in the problem are analyzed through graphs. The results showed that the flux is sinusoidal in nature and it is an increasing function with the increase of  whereas it is a decreasing function with the increase of . An opposite behavior for shear strain is noticed compared to pressure gradient.  Finally, trapping p

Preparation of superposed thin film (CdTe)1-xSex / ZnS) with concentration of (x= 0.1, 0.3, 0.5) at a temperature of substrate (Ts= 80 0C) by using Thermal Vacuum Evaporation System. The measurement of X-ray diffraction shows that the compounds CdTe, ZnS, (CdTe)1-xSex and (CdTe)1-xSex / ZnS have a polycrystalline structure, the C-V characteristic shows that the capacitance degrease by increasing the concentration (x) in reverse bias, while the I-V characteristic shows the current dark (Id) increase in forward and reverse bias by increasing (x) and the photocurrent (Iph) increase in reverse bias by increasing the concentration (x), the values of photocurrent are greater than from the values of the dark current for all concentrations

In this work, ZnS thin films have been deposited by developed laser deposition technique on glass substrates at room temperature. After deposition process, the films were annealed at different temperatures (200ºC , 300 ºC and 400ºC ) using thermal furnace.The developed technique was used to obtain homogeneous thin films of ZnS depending on vaporization of this semiconductor material by continuous CO2 laser with a simple fan to ensure obtaining homogeneous films. ZnS thin films were annealed at temperature 200ºC, 300 ºC and 400ºC for (20) minute in vacuum environment. Optical properties of ZnS thin film such as absorbance, transmittance, reflectance, optical band gap, refractive index extinction coefficient and absorption coefficien