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sEffect of Sb doping on CuAlSe2 thin films and their behavior on the preparation CuAlSe2/Si heterojunction solar cells
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Publication Date
Sun Jan 01 2023
Journal Name
Aip Conference Proceedings
Comparison consequence of violet and red laser irradiation on the optical properties of cobalt dioxide (CoO2) thin films prepared via (SCSPT)
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Publication Date
Sat Jan 01 2011
Journal Name
Iraqi Journal Of Physics
The Effect of CdCl2 and annealing treatments on structural properties of CdS/CdTe heterojunction
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CdS and CdTe thin films were thermally deposited onto glass substrate. The CdCl2 layer was deposited onto CdS surface. These followed by annealing for different duration times to modify the surface and interface of the junction. The diffraction patterns showed that the intensity of the peaks increased with the CdCl2/annealed treatment, and the grain sizes are increased after CdCl2/annealed treatment

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Publication Date
Thu Mar 30 2023
Journal Name
Iraqi Journal Of Science
The Effect of 650 nm Diode Laser on Growth Curve of Gram-negative Bacteria and Their Phagocytic killing Assay by PMN Cells.
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Nowadays laser in medicine is a rapidly growing field in both researches and applications and many studies have been done in bacteriology against different types of lasers. The effect of the laser depends on many factors, one of the laser factors was the wavelength. The red wavelength band has been considered as a stimulated wavelength for prokaryotic and eukaryotic cells. In this study, three clinical species of Gram-negative bacteria (E. coli, Proteus mirabilis, and Pseudomonas aeruginosa) were exposed to 650 nm band of red region wavelength by a diode laser. The effect of that wavelength appeared on the growth curves for each species along 3 days after laser treatment. The energy density (E.D.) 2.8 J/cm2 gave a positive effect on grow

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Publication Date
Fri Mar 01 2019
Journal Name
Iraqi Journal Of Physics
The effect of rear earth doping CdS nanostructure on structural, optical and photoconductivity properties
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Rare earth elements (Cerium, Lanthanum and Neodymium) doped CdS thin films are prepared using the chemical Spray Pyrolysis Method with temperature 200 oC. The X-ray diffraction (XRD) analysis refers that pure CdS and CdS:Ce, CdS:La and CdS:Nd thin films showed the hexagonal crystalline phase. The crystallite size determined by the Debye-Scherrer equation and the range was (35.8– 23.76 nm), and it was confirmed by field emission scanning electron microscopy (FE-SEM). The pure and doped CdS shows a direct band gap (2.57 to 2.72 eV), which was obtained by transmittance. The room-temperature photoluminescence of pure and doped CdS shows large peak at 431 nm, and two small peaks at (530 and 610 nm). The Current – voltage measurement in da

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Publication Date
Sat Aug 19 2023
Journal Name
Silicon
Structural and Hardness Characteristics of Silicon Nitride Thin Films Deposited on Metallic Substrates by DC Reactive Sputtering Technique
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Publication Date
Sat Oct 01 2011
Journal Name
Iraqi Journal Of Physics
Electrochemical deposition of CuInS2 thin films
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Chalcopyrite thin films were one-step potentiostatically deposited onto stainless steel plates from aqueous solution containing CuSO4, In2(SO4)3 and Na2S2O3.The ratio of (In3+:Cu2+) which involved in the solution and The effect of cathodic potentials on the structural had been studied. X-ray diffraction (XRD) patterns for deposited films showed that the suitable ratio of (In3+:Cu2+) =6:1, and suitable voltage is -0.90 V versus (Ag/AgCl) reference electrode

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Publication Date
Wed Dec 30 2009
Journal Name
Iraqi Journal Of Physics
Electrical Properties of ZnS Thin Films
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The effect of annealing temperature (Ta) on the electrical properties like ,D.C electrical conductivity (σ DC), activation energy (Ea),A.C conductivity σa.c ,real and imaginary (ε1,ε2) of dielectric constants ,relaxation time (τ) has been measured of ZnS thin films (350 nm) in thickness which were prepared at room temperature (R.T) using thermal evaporation under vacuum . The results showed that σD.C increases while the activation energy values(Ea) decreases with increasing of annealing temperature.(Ta) from 303- 423 K .
The density of charge carriers (nH) and Hall mobility (μH) increases also with increasing of annealing temperature Hall effect measurements showed that ZnS films were n-type converted to p-type at high annealin

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Publication Date
Sun Mar 07 2010
Journal Name
Baghdad Science Journal
Optical properties of CdO thin films
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Cadmium Oxide thin films were deposited on glass substrate by spray pyrolysis technique at different temperatures (300,350,400, 500)oC. The optical properties of the films were studied in this work. The optical band-gap was determined from absorption spectra, it was found that the optical band-gap was within the range of (2.5-2.56)eV also width of localized states and another optical properties.

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Publication Date
Thu Dec 01 2011
Journal Name
Iraqi Journal Of Physics
Influence of doping concentration on the main parameters of CdSe:Cu photoconductor detector
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The photonconductor detectors CdSe:Cu was fabricated as a thin film of (1 μm) in thickness using vacuum evaporation technique. doping with copper was made using vacuum annealing at 350oC under argon atmosphere . The spectral responsivity and spectral detectivity of the detector were determined as a function of incident wavelength on the sample. A remarkable improvement in performance was absorbed for the specimen, which doping with (1-5 wt%) Cu.
The spectral response increases with increasing of wavelength for incident radiation to maximum value, after that , it reduced sharply . There is a shifting for peak responsivity indirect of higher wavelength. The detectivity was increased with doping but its decreased as the concentration in

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Publication Date
Sun Sep 29 2019
Journal Name
Iraqi Journal Of Science
A Study on the Scattering and Absorption Efficiencies of Si-Ag Coaxial Nanowire
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     Scattering and Absorption Efficiencies of Si-Ag Coaxial nanowire (NWs) were simulated using Mie-Lorentz scattering approach. The thickness of Ag shell was fixed at around 10 nm with Si core diameter of (10, 20, 30 and 40) nm.  Scattering Efficiencies  and Absorption Efficiencies  of core-shell nanowire as a function of wavelength (300-2000 nm) within various core diameters were calculated. The study shows a remarkable behavior of scattering for un-polarized light in Silicon nanowire (core only) with wavelength of (320- 500nm). In other words, adding Ag shell has decreased the scattering efficiency of core-shell nanowire for all diameters.

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