The discharged water from tannery plants is main source for pollution of soil and groundwater, especially in Nahrawan area. Water samples is collected from 10 sites of wells, discharged water and from using water in different levels of tannery and 7 soil samples from different sites inside factories area and outside it. The results shown that pH for samples of wells and discharged water were within allowable limits between 6.5- 8.5, except the value of pH recorded in the discharged water sample (after the addition of calcium hydroxide) was 12.8, as well as reached the highest value of total dissolved salts (TDS) 7800 ppm in same samples. It also reached its highest value of electrical conductivity (EC) 8200 μS/cm. The results showed tha
... Show MoreZinc oxide thin films were deposited by chemical spray pyrolysis onto glass substrates which are held at a temperature of 673 K. Some structural, electrical, optical and gas sensing properties of films were studied. The resistance of ZnO thin film exhibits a change of magnitude as the ambient gas is cycled from air to oxygen and nitrogen dioxide
Aluminum doped zinc oxide nanoparticles (AZO) with different doping concentrations were prepared by Nd-YAG laser ablation of target in deionized water. The characterization of these nanoparticles was performed using Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM) and photoluminance spectroscopy (PL). FTIR spectra confirmed the formation of vibrational bonds for ZnO NPs and AZO NPs. SEM images illustrated that the size and shape of the NPs changed with changing the number of laser pulses. Photoluminescence peaks exhibited two emission peaks, one at the UV region and the second in the visible region, which were modified as the number of laser pulses and doping concentration were ch
... Show MoreNanocrystal-ZnS-loaded graphene was synthesized by a facile co-precipitation route. The Graphene was affected on the characterization of ZnS which has been investigated. XRD results reveal that ZnS has a cubic system while the hexagonal structure has been observed by loading graphene during preparation ZnS. D.c-conductivity proves that ZnS and ZnS/Gr have semiconductor behavior. The sensing properties of ZnS/Gr against NO2 gas were investigated as a function of operating temperature and time under optimal condition. The sensitivity, response time and recovery time were calculated with different operating temperatures (100, 150, 200)oC.
In this paper we have studied a generalization of a class of ( w-valent ) functions with two fixed points involving hypergeometric function with generalization integral operator . We obtain some results like, coefficient estimates and some theorems of this class.
In this work, silicon nitride (Si3N4) thin films were deposited on metallic substrates (aluminium and titanium sheets) by the DC reactive sputtering technique using two different silicon targets (n-type and p-type Si wafers) as well as two Ar:N2 gas mixing ratios (50:50 and 70:30). The electrical conductivity of the metallic (aluminium and titanium) substrates was measured before and after the deposition of silicon nitride thin films on both surfaces of the substrates. The results obtained from this work showed that the deposited films, in general, reduced the electrical conductivity of the substrates, and the thin films prepared from n-type silicon targets using a 50:50 mixing ratio and deposited on both
... Show MoreIn this work, multilayer nanostructures were prepared from two metal oxide thin films by dc reactive magnetron sputtering technique. These metal oxide were nickel oxide (NiO) and titanium dioxide (TiO2). The prepared nanostructures showed high structural purity as confirmed by the spectroscopic and structural characterization tests, mainly FTIR, XRD and EDX. This feature may be attributed to the fine control of operation parameters of dc reactive magnetron sputtering system as well as the preparation conditions using the same system. The nanostructures prepared in this work can be successfully used for the fabrication of nanodevices for photonics and optoelectronics requiring highly-pure nanomaterials.