The nanocrystalline porous silicon (PS) films are prepared by electrochemical etching ECE of p -type silicon wafer with current density (10mA/cm ) and etching times on the formation nano -sized pore array with a dimension of around different etching time (10 and 20) min. The films were characterized by the measurement of XRD, atomic force microscopy properties (AFM). We have estimated crystallites size from X -Ray diffraction about nanoscale for PS and AFM confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits.
Investigation of p-Ps Produced by Electrochemical Etching
Keywords—porous silicon
Nanocrystalline porous silicon
current density Anodization
XRD &AFM
Publication Date
Mon Nov 01 2010
Journal Name
Al-nahrain Journal Of Science
Chemical Elements Diffusion in the Solar Interior
The standard solar model and equation of state have been used to study relative diffusion of Hydrogen and Helium in the present time for solar interior
as a function of distance and depth from the center of the star. The effects of temperature and density on diffusion velocity for these chemical elements have been explaned.
It is found that heat flow which is arising from these reactions leads to an increase in helium diffusion velocity
while the temperature and density leading to a decrease in Hydrogen diffusion velocity. This means that Hydrogen behaves inversely with that for helium does through these reactions. Accordingly
diffusion percentages for Hydrogen
Helium and other Heavy Elements could be determined for the main sequence stars and white dwarf stars.