This study was carried out to investigate the possibility of chickpea soaked water as a substitute for yeast in dough fermentation and its effects on sensory properties of the laboratory loaf bread. Chickpea was soaked for 24,48 and 72 hours at room temperature and used in proportion with or without yeast in dough fermentation . The results revealed that , as the percentage of soaked chickpea water substitution increased, the volume of the produced loaf bread decreased as compared with the control treatment (only yeast ).Best results were obtained by using soaked chickpea water for 24 hours in proportion of 1:1 soaked chickpea water : yeast regarding the sensory properties ,volume and leavening of the loaf bread.
Keywords: chickpea so

CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.

Fire is the most sever environmental condition affecting on concrete structures, thus investigating for fire safet, IJSR, Call for Papers, Online Journal

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تتمحور هذه الدراسة حول اثر عنصرين مهمين من عناصر المناخ في  زراعة وإنتاج محصولي القمح والشعير في محافظتين من محافظات العراق هما  ديالى وميسان بهدف الكشف عن الامكانات المناخية لزراعتهما وانتاجهما في تلك المحافظتين. يعد محصولي القمح والشعير من أهم المحاصيل الحقلية المزروعة في المحافظتين، اذ تمتلكان إمكانيات واسعة للتوسع بزراعتهما وإنتاجهما؛ وهناك فرصة كبيرة لزيادة غلة الدونم الواحد عن طريق حل المشاكل و

The enhancement of ZnSe/Si Heterojunction by adding some elements (V, In and Cu) as impurities is the main goal because they contribute to the manufacturing of renewable energy equipment, such as solar cells. This paper describes the preparation of thin films ZnSe with V, In and Cu doped using thermal evaporation method with a vacuum of 10–5 Torr. The thin film was obtained from this work could be applied in heterojunction solar cell because of several advantages including high absorption coefficient value and direct band gap. The samples prepared on a glass and n-type Si wafer substrate. These films have been annealed for 1 h in 450 K. X-ray diffraction XRD results indicated that ZnSe thin film possesses poly-crystalline structure after