This study shows how the structural and dielectric properties of (SnO2)1-x(Mn2O3)x, (where x=0.00, 0.03, 0.05,0.07, and 0.09) prepared using the solid state reaction technique, are affected by the doping of semiconducting metal oxide Mn2O3. Structural analysis of the composites was carried out using information from the composite samples obtained from X-ray diffraction (XRD). The diffraction peak shifting in XRD patterns indicated that Mn ions were successfully incorporated into the SnO2 crystal lattice. Mn ions were successfully doped in the Tin oxide matrix lattice with the subsequent increase of doping levels. The average crystal size evaluated using Scherrer's equation was found to vary from 33 to 37 nm, and the lattice constants were a=4.68-3.69 and c=3.166-3.173. This work also tested the dielectric characteristics of (SnO2)1-x(Mn2O3) x composites. The effects of Mn doping were interpreted and discussed. The effects of Mn doping on the σa.c(ω), exponent (s), dielectric constant, dielectric loss, relaxation time, and polarizability were also studied.
Phenol condensed with β-keto esters via Pechmann condensation to form derivatives of Coumarin in various reaction conditions by two ways. Present paper is comparative study of synthesis Coumarin with the yield of product , reaction time and reaction conditions.
The present studier aims to study the kinetic of reaction at different experimental conditions depending on coliform bacteria concentration and hypochlorite ion. The effects that had been investigated were different of sodium hypochlorite doses, contact time, pH and temperature (20, 29, 37) o C. The water samples were taken from Al-Wathba water treatment plant in Risafa side of Tigris River in Baghdad. The biological tests included the most probable number (M.P.N) for indicating the concentration of coliform bacteria with different contact times and the total plate count (T.P.C) for indicating the amount of colonies for general bacteria. The iodimetry method (chemical test) was used for indicating the concentration of hypochlo
... Show MorePolymer blended electrolytes of various concentrations of undoped PAN/PMMA (80/20, 75/25, 70/30, 65/35 and 60/40 wt%) and doped with lithium salts (LiCl, Li2SO4H2O, LiNO3, Li2CO3) at 20% wt have been prepared by the solution casting method using dimethylformamide as a solvent. The electrical conductivity has been carried out using an LCR meter. The results showed that the highest ionic conductivity was 2.80x10-7 (Ω.cm)-1 and 1.05x10-1 (Ω.cm)-1 at 100 kHz frequency at room temperature for undoped (60% PAN + 40% PMMA) and (80% PAN + 20% PMMA) doped with 20%wt Li2CO3 composite blends, respect
... Show MoreThe A.C conductivity of three samples of lanthanide oxide : zinc oxide (La2O3)1-x(ZnO)x pellets with different zinc oxide content which were sintered 1273 K temperatures were studied using LRC meters in the frequency range of 50–106 Hz at temperature of 30 °C. The a.c conductivity, was analyzed depending of the universal power law proposed by Jonsher,. The slope of the relation between logarithm of a.c conductivity and angular frequency represent the s value were in the range (0.44-0.77) which found to increase by increasing of zinc oxide content which coincided with the small po
Sb2S3 thin films have been prepared by chemical bath deposition on a glas sub Absorbance and transmittance spectra were recorded in the wavelength range (30-900) nm. The effects of thickness on absorption coefficient, reflectance, refractive index, extinction coefficient, real and imaginary parts of dielectric constant were estimated. It was found that the reflectivity, absorption coefficient , extinction coefficient, real part of dielectric constant and refractive index, all these parameters decrease as the thickness increased, while the imaginary part of the dielectric constant increase as the thickness incre
... Show MoreIn this article, the influence of group nano transition metal oxides such as {(MnO2), (Fe2O3) and (CuO)} thin films on the (ZnO-TiO2) electric characteristics have been analyzed. The prepared films deposited on glass substrate laser Nd-YAG with wavelength (ℷ =1064 nm) ,energy of (800mJ) and number of shots (400). The density of the film was found to be (200 nm) at room temperature (RT) and annealing temperature (573K).Using DC Conductivity and Hall Effect, we obtained the electrical properties of the films. The DC Conductivity shows that that the activation energies decrease while the σRT at annealing temperature with different elements increases the formation of mixed oxides. The Hall effect, the elec
... Show MoreCdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.
