Modified optical fiber sensors received increasing attention because of their superior properties over electrical sensors. These properties include their immunity towards electromagnetic interference and the ability to be deployed in corrosive and volatile environment. Several optical fiber platforms have been developed for chemical sensing applications based on modifying optical fiber cladding layer such as etched, tapered, D-shaped and etched-tapered. The modifications purpose is to extend the evanescent wave propagating out of the core physical dimensions. Thus, evanescent wave interaction with analyte is enhanced. Modified optical transducing platforms are integrated in gas sensing applications, such as ammonia. Modified optical fiber sensors coated with nanostructured thin films have been developed and gained popularity as practical devices towards gases with low concentrations. The development and characterization of the modified SMF sensing platforms including etched, tapered and etched-tapered platforms against ammonia will be presented in this chapter. These platforms were coated with PANI nanostructured thin film. The 50 μm etched-tapered SMF coated with PANI produced response, recovery times, and sensitivity of 58 s, 475 s, and 231.5%, respectively, in the C-band range. The limit of detection of the modified fiber sensor was 25 ppm. The developed sensors exhibit good repeatability, reversibility, and selectivity.
The fluorescence emission of Rhodamine 6G (R6G) and Acriflavine dyes in PMMA polymer have been studied by changing the irradiation and exposure time of laser light to know the effect of this parameter. It was found that the fluorescence intensity decreases in the polymer samples doped dyes as the exposure time increases and then reaches stabilization at long times, this behavior called photobleaching, which have been shown in liquid phase less than solid phase. Using 2nd harmonic with wavelength 530 nm laser, the photobleaching effect in the two dye-doped polymers different solvent but same was studied. It was observed that photobleaching of by different solution and by using dip spin coating the photobleaching seem in liquid phase more
... Show MoreThe influence of silver doped n-type polycrystalline CdTe film with thickness of 200 nm and rate deposition of 0.3 nm.s -1 prepared under high vacuum using thermal co-evaporation technique on its some structural and electrical properties was reported. The X- ray analysis showed that all samples are polycrystalline and have the cubic zinc blend structure with preferential orientation in the [111] direction. Films doping with impurity percentages (2, 3, and 4) %Ag lead to a significant increase in the carrier concentration, so it is found to change from 23.493 108 cm -3 to 59.297 108 cm -3 for pure and doped CdTe thin films with 4%Ag respectively. But films doping with impurity percentages above lead to a significant decrease in the electrica
... Show MoreThe photoconductivity and its dependence on light intensity have been investigated in a-Ge20Se80 thin films as a function of temperature between (293–323)K. The result showed that the photoconductivity and photosensitivity increase with increase of annealing temperature. This behavior is interpreted in terms of the dispersive diffusion –controlled recombination of localized electrons and holes.
Copper selenide (Cu2Se) thin films were prepared by thermal evaporation at RT with thickness 500 nm. The heat-treating for (400 &500) K for the absorber layer has been investigated. This research includes, studying the structural properties of X-ray diffraction (XRD) that show the Cu2Se thin film (Cubic) and has a polycrystalline orientation prevalent (220). Moreover, studying the effect of annealing on their surface morphology properties by using Atomic Force Microscopy AFM. Optical properties were considered using the transmittance and absorbance spectra had been recorded when wavelength range (400 - 1000) nm in order to study the absorption coefficient and energy gap. It was found that these films had allowed direct transitio
... Show MoreLead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is
... Show MorePsi prepared by Electrochemical etching technique at invariable etching current density of 10 mA/cm2 and at different times (7 and 17) min. The porous Si structure was studied using XRD, (FE-SEM) and EDS. The process of sensing NH3 gas is carried out at different operating temperatures (R.t,80,130 and 200)°C and the gas concentration is constant. It is measured by changing the resistance of the sensor as a function of exposure time to the gas. The result showed the XRD patterns of the PS at (7 and 17) min etching time. the peak samples at (111) around 2θ = 28.5°. It is observed that the peak intensity declines with rising the etching time,
: In modern optical communication system, noise rejection multiple access interference (MAI) must be rejected in dense access network (DAN). This paper will study the dual optical band pass and notch filters. They will be extracted with tunable FWHM using 10cm (PMF) with different cladding diameters formed with etching 125μm PMF after immersing it with 40% of hydrofluoric acid (HF). This fiber acts as assessing fiber to perform Sagnac interferometer with splicing regions that placed 12cm (SMF) for performing hybrid Sagnac interferometer that consists of Mach-Zehnder instead of Sagnac loop which is illuminated by using laser source with centroid wavelength of 1546.7nm and FWHM of 286 pm or 9 ns in the time domain. . Firs
... Show More