Psi prepared by Electrochemical etching technique at invariable etching current density of 10 mA/cm2 and at different times (7 and 17) min. The porous Si structure was studied using XRD, (FE-SEM) and EDS. The process of sensing NH3 gas is carried out at different operating temperatures (R.t,80,130 and 200)°C and the gas concentration is constant. It is measured by changing the resistance of the sensor as a function of exposure time to the gas. The result showed the XRD patterns of the PS at (7 and 17) min etching time. the peak samples at (111) around 2θ = 28.5°. It is observed that the peak intensity declines with rising the etching time, and some structural parameters for porous silicon are calculated. From FE-SEM, the images show the sample prepared in (7 and 17) min with the depth of (6.18 12.82) μm, with a size of about 50 nm. Porous silicon that was produced in a time of 17 min has a higher sensitivity to NH3 gas than that of the sample that was produced in a time of 7 min. It was found that when the operating temperature changes from (R.T -200C°), the sensitivity of the samples changes with the stability of the etching time. The PSi sample (17 min) has a high sensitivity for NH3 gas at room temp.
Hemorrhagic insult is a major source of morbidity and mortality in both adults and newborn babies in the developed countries. The mechanisms underlying the non-traumatic rupture of cerebral vessels are not fully clear, but there is strong evidence that stress, which is associated with an increase in arterial blood pressure, plays a crucial role in the development of acute intracranial hemorrhage (ICH), and alterations in cerebral blood flow (CBF) may contribute to the pathogenesis of ICH. The problem is that there are no effective diagnostic methods that allow for a prognosis of risk to be made for the development of ICH. Therefore, quantitative assessment of CBF may significantly advance the underst