This survey investigates the thermal evaporation of Ag2Se on glass substrates at various thermal annealing temperatures (300, 348, 398, and 448) °K. To ascertain the effect of annealing temperature on the structural, surface morphology, and optical properties of Ag2Se films, investigations and research were carried out. The crystal structure of the film was described by Xray diffraction and other methods.The physical structure and characteristics of the Ag2Se thin films were examined using X-ray and atomic force microscopy (AFM) based techniques. The Ag2Se films surface morphology was examined by AFM techniques; the investigation gave average diameter, surface roughness, and grain size mutation values with increasing annealing temperature (75.74 nm–96.36 nm). Additionally, With various variations to the nominal values, the absorbance and transmittance spectra are further studied and reported in accordance with the wavelength range of (400-1100) nm. The findings indicate that the sample highest absorbance value was attained at a temperature treatment of 448 K, whereas the sample highest transmittance was at a temperature treatment of 300 K. According to the results, direct transitions were permitted in the under-review thin films at optical energies of (2.15, 1.85, 1.75, and 1.7) eV, respectively
NiO0.99Cu0.01 films have been deposited using thermal evaporation
technique on glass substrates under vacuum 10-5mbar. The thickness
of the films was 220nm. The as -deposited films were annealed to
different annealing temperatures (373, 423, and 473) K under
vacuum 10-3mbar for 1 h. The structural properties of the films were
examined using X-ray diffraction (XRD). The results show that no
clear diffraction peaks in the range 2θ= (20-50)o for the as deposited
films. On the other hand, by annealing the films to 423K in vacuum
for 1 h, a weak reflection peak attributable to cubic NiO was
detected. On heating the films at 473K for 1 h, this peak was
observed to be stronger. The most intense peak is at 2θ = 37
Antimony (Sb) films are fabricated by depositing (Sb) on glass substrates at room
temperature by the method of vacuum evaporation with thickness (0.25 and 0.51m),
with rate of deposition equal to (2.77Å/sec), the two samples are annealed in a
vacuum for one hour at 473K. The optical constants which are represented by the
refractive index (n), extinction coefficient (k) were determined from transmittance
spectram in the near Infrared(2500-3500 )nm regions. The tests have been shown
that the optical energy gap increases with increasing of annealing temperature for
the two samples.
Effect of the thermal annealing at 400oC for 2 hours and Argon laser radiation for half hour on the optical properties of AgAlS2 thin films, prepared on glass slides by chemical spray pyrolysis at 360oC with (0.18±0.05) μm thickness .The optical characteristics of the prepared thin films have been investigated by UV/Vis spectrophotometer in the wavelength range (300 – 1100)nm .The films have a direct allow electronic transition with optical energy (Eg) values decreased from (2.25) eV for untreated thin films to (2.10) eV for the annealed films and to (2.00) eV for the radiated films. The maximum value of the refractive index (n) for all thin films are given about (2.6). Also the extinction coefficient (K) and the real and imaginary d
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Sb-dopedAgInSe2 (AIS: 3%Sb)thin films were synthesized by thermal evaporation with a vacuum of 7*10-6torr on glass with (400+20) nm thickness. X-ray diffraction was used to show that Sb atoms were successfully incorporated into the AgInSe2 lattice. Then the thin films are annealed in air at 573 K. XRD shows that thin films AIS pure, AIS: 3%Sb and annealing at 573 K are polycrystalline with tetragonal structure with preferential orientation (112).raise the crystallinity degree. The Absorption spectra revealed that the average Absorption was more than 60% at the wavelength range of 400–700 nm. UV/Visible measure shows the lowering in energy gap to 1.4 eV forAIS: 3%Sb at 573 Kt his energy gap making these samples suitable for p
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The effect of 0.66 µeV gamma radiation on the structural and optical properties of the CdTe thin films prepared by thermal evaporation at thickness 350nm, The samples were irradiated with time (50 h and 79h) at room temperature. The absorption spectra for all the samples were recorded using UV-VIS spectrometer in order to calculate the energy gap, refractive index and others parameter . The optical energy gap was found decrease from (1.9 to 1.67) eV.
In this research, we study the changing structural properties of ZnO with changing annealing temp., in the range (473-773)K prepared by chemical bath deposition method at temp. (353)K, where deposited on glasses substrates at thickness (500±25)nm, the investigation of (XRD) indicates that the (ZnO) films are polycrystalline type of Hexagonal.
The results of the measuring of each sample from grain size, microstrain, dislocation density, integral breadth, shape factor and texture coefficient, show that annealing process leads to increase the grain size (26.74-57.96)nm, and decrease microstrain (0.130-0.01478), dislocation density (1.398-0.297)*1015
... Show MoreIn this work, ZnS thin films have been deposited by developed laser deposition technique on glass substrates at room temperature. After deposition process, the films were annealed at different temperatures (200ºC , 300 ºC and 400ºC ) using thermal furnace.The developed technique was used to obtain homogeneous thin films of ZnS depending on vaporization of this semiconductor material by continuous CO2 laser with a simple fan to ensure obtaining homogeneous films. ZnS thin films were annealed at temperature 200ºC, 300 ºC and 400ºC for (20) minute in vacuum environment. Optical properties of ZnS thin film such as absorbance, transmittance, reflectance, optical band gap, refractive index extinction coefficient and absorption coefficien
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