This work aimed PVA nanofibers in a range of concentrations were successfully manufactured via electrospinning. PVA NFs/Si was effectively prepared using the electrospinning process. The structural, morphological, optical and electrical properties of the prepared PVA were studied using XRD, FE-SEM, UV-Vis spectrophotometer and I-V characteristics, respectively. The amorphous structure of PVA nanofibers was observed. The optical energy gap from ultraviolet to visible was between (2.75 and 2.41) eV, making this compound highly sensitive to visible orange light at 610 nm, with a photosensitivity of 66%. The optical energy gap of PVA/Si heterojunction was utilized to modify this film from the UV to the visible spectrum. As show in the results,

In this research, thin films of CdO: Mg and n-CdO: Mg/ p-Si heterojunction with thickness (500±50) nm have been deposited at R.T (300 K) by thermal evaporation technique. These samples have been annealed at different annealing temperatures (373 and 473) K for one hour. Structural, optical and electrical properties of {CdO: Mg (1%)} films deposited on glass substrate as a function of annealing temperature are studied in detail. The C-V measurement of n-CdO: Mg/ p-Si heterojunction (HJ) at frequency (100 KHz) at different annealing temperatures have shown that these HJ were of abrupt type and the builtin potential (Vbi) increase as the annealing temperature increases. The I-V characteristics of heterojunction prepared under dark case at

            The organation ⁄monomer N-naphthylacrylamide (NAA) was prepared; subsequently the synthesized monomer was successfully copolymerized with acrylicacid (AA) and methylacrylate (MA) by free radical technique using dry benzene as solvent and benzoyl peroxide (BPO) as initiator. The overall conversion was kept low (≤ 10% wt/wt) for all studies copolymers samples. The synthesized monomer and copolymers were characterized using Fourier transform infrared spectroscopy (FT-IR), and their thermal properties were studied by DSC and TGA. The copolymers compositions were determined by elemental analysis. Kelen-Tudes and Finmman-Ross graphical procedures were employed to determine the monomers reactivity ratios. The der

            The organation ⁄monomer N-naphthylacrylamide (NAA) was prepared; subsequently the synthesized monomer was successfully copolymerized with acrylicacid (AA) and methylacrylate (MA) by free radical technique using dry benzene as solvent and benzoyl peroxide (BPO) as initiator. The overall conversion was kept low (≤ 10% wt/wt) for all studies copolymers samples. The synthesized monomer and copolymers were characterized using Fourier transform infrared spectroscopy (FT-IR), and their thermal properties were studied by DSC and TGA. The copolymers compositions were determined by elemental analysis. Kelen-Tudes and Finmman-Ross graphical procedures were employed to determine

In this work we present a detailed study on anisotype nGe-pSi heterojunction (HJ) used as photodetector in the wavelength range (500-1100 nm). I-V characteristics in the dark and under illumination, C-V characteristics, minority carriers lifetime (MCLT), spectral responsivity, field of view, and linearity were investigated at 300K. The results showed that the detector has maximum spectral responsivity at λ=950 nm. The photo-induced open circuit voltage decay results revealed that the MCLT of HJ was around 14.4 μs

Aluminum doped zinc selenide ZnSe/n-Si thin films of (250∓20 nm) thickness with (0.01, 0.02 and 0.03), are depositing on the two type of substrate (glass and n-Si) to manufacture (ZnSe/n-Si) solar cell through using thermal vacuum evaporation procedure. physical and optoelectronic properties were examined for the samples. X-Ray and AFM techniques are using to study the structure properties. The energy band gap of as-deposited ZnSe thin films for changed dopant ratio were ranging from (2.6-2.68 eV). The results of Hall effect show that pure and doping films were (p-type), and the concentration carriers and the carriers mobility increases with increase Al-dopant ratio. The (C-V) have shown that the heterojunction were of abrupt type. In add

Photodetector based on Rutile and Anatase TiO₂ nanostructures/n-Si Heterojunction