Preferred Language
Articles
/
9RecVI8BVTCNdQwCT2wF
Studying the responsivity and detectivity of GO/PSi/n-Si photo detector via drop casting technique
...Show More Authors

Scopus Clarivate Crossref
View Publication
Publication Date
Tue Sep 01 2020
Journal Name
Journal Of Ovonic Research
Growth and optoelectronic properties of p-CuO:Al/n-Si heterojunction
...Show More Authors

Publication Date
Tue Sep 01 2020
Journal Name
Journal Of Ovonic Research
Growth and optoelectronic properties of p-CuO:Al/n-Si heterojunction
...Show More Authors

Scopus (13)
Scopus
Publication Date
Sun Dec 03 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Science
Studying Hueckel edge detector using binary step edge image
...Show More Authors

Publication Date
Thu Jun 08 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Studying Hueckel Edge Detector Using Binary Step Edge Image
...Show More Authors

Hueckel edge detector study using binary step edge image is presented. The standard algorithm that Hueckel presented, in his paper without any alteration is adopted. This paper studies a fully analysis for the algorithm efficiency, time consuming and the expected results with slide window size and edge direction. An analysis for its behavior with the changing of the slide window size (disk size) is presented. The best result is acquired when the window size equals to four pixel.  

View Publication Preview PDF
Crossref (3)
Crossref
Publication Date
Tue May 01 2018
Journal Name
Journal Of Physics: Conference Series
Fabrication and characterization study of ZnTe/n-Si heterojunction solar cell application
...Show More Authors

View Publication
Scopus (12)
Crossref (9)
Scopus Clarivate Crossref
Publication Date
Mon Jun 12 2006
Journal Name
Iraqi Journal Of Laser
Laser-Induced Low-Resistance Ohmic Contacts on n-Si
...Show More Authors

In the present work, the feasibility of formation near-ideal ohmic behavior of In/n-Si contact efficiently by 300 s duration Nd:YAG pulsed laser processing has been recognized. Several laser pulses energy densities have been used, and the optimal energy density that gives best results is obtained. Topography of the irradiated region was extensively discussed and supported with micrographic illustrations to determine the surface condition that can play the important role in the ohmic contact quality. I-V characteristics in the forward and reverse bias and barrier height measurements have been studied for different irradiated samples to determine the laser energy density that gives best ohmic behavior. Comparing the current results with

... Show More
View Publication Preview PDF
Publication Date
Sun Mar 04 2018
Journal Name
Iraqi Journal Of Science
Energy Band Diagram of NiO: Lu2 O3/n-Si heterojunction
...Show More Authors

Crystalline NiO and doped with rare earth lutetium oxide (Lu2O3) at (6%wt)., have been prepared by pulsed laser deposition (PLD), The Q-switched Nd:YAG laser beam was incident at an angle of 45° on the target surface, and the energy of the laser was 500 mJ, wavelengths of 532nm, and frequency 6Hz. XRD pattern shows all doped and undoped films are polycrystalline, and cubic structure. The 200nm thin NiO showed an average optical energy band gap of 3.4eV, and increase with doping at 6% Lu2O3. The Hall Effect measurements confirmed that holes were predominant charges in the conduction process (i.e p-type). D.C conductivity measurements with temp-erature (T), show

... Show More
View Publication Preview PDF
Publication Date
Sat Oct 01 2011
Journal Name
Iraqi Journal Of Physics
Fabrication of PbxS1-x Detector and Studying the Effect of x Content on its some Physical Properties
...Show More Authors

A polycrystalline PbxS1-x alloys with various Pb content ( 0.54 and 0.55) has been prepared successfully. The structure and composition of alloys are determined by X-ray diffraction (XRD), atomic absorption spectroscopy (AAS) and X-ray fluorescence (XRF) respectively. The X-ray diffraction results shows that the structure is polycrystalline with cubic structure, and there are strong peaks at the direction (200) and (111), the grain size varies between 20 and 82 nm. From AAS and XRF result, the concentrations of Pb content for these alloys were determined. The results show high accuracy and very close to the theoretical values. A photoconductive detector as a bulk has been fabricated by taking pieces of prepared alloys and polished chemic

... Show More
View Publication Preview PDF
Publication Date
Sat Jan 06 2018
Journal Name
American Institute Of Physics
Synthesis and characterization study of n-Bi2O3/p-Si heterojunction dependence on thickness
...Show More Authors

Abstract. In this work, Bi2O3 was deposited as a thin film of different thickness (400, 500, and 600 ±20 nm) by using thermal oxidation at 573 K with ambient oxygen of evaporated bismuth (Bi) thin films in a vacuum on glass substrate and on Si wafer to produce n-Bi2O3/p-Si heterojunction. The effect of thickness on the structural, electrical, surface and optical properties of Bi2O3 thin films was studied. XRD analysis reveals that all the as deposited Bi2O3 films show polycrystalline tetragonal structure, with preferential orientation in the (201) direction, without any change in structure due to increase of film thickness. AFM and SEM images are used to investigate the influences of film thickness on surface properties. The optical measur

... Show More
Preview PDF
Publication Date
Wed Jun 01 2016
Journal Name
Journal Of Multidisciplinary Engineering Science And Technology (jmest)
Fabrication And Characterization Of P-Cuo/N-Si Heterojunction For Solar Cell Applications
...Show More Authors

This studies p- CuO / n - Si hete-rojunction was deposited by high vacuum thermal evaporation of Copper subjected to thermal oxidation at 300 oC on silicon. Surface morphology properties of The optical properties concerning the transmission spectra were studies for prepared thin films. this structure have been studied. XRD anaylsis discover that the peak at (𝟏𝟏𝟏-) and (111) plane are take over for the crystal quality of the CuO films. The band gap of CuO films is found to be 1.54 eV. The average grain size of is measured from AFM analysis is around 14.70 nm. The responsivity photodetector after deposited CuO appear increasing in response