In this study, we investigate about the estimation improvement for Autoregressive model of the third order, by using Levinson-Durbin Recurrence (LDR) and Weighted Least Squares Error ( WLSE ).By generating time series from AR(3) model when the error term for AR(3) is normally and Non normally distributed and when the error term has ARCH(q) model with order q=1,2.We used different samples sizes and the results are obtained by using simulation. In general, we concluded that the estimation improvement for Autoregressive model for both estimation methods (LDR&WLSE), would be by increasing sample size, for all distributions which are considered for the error term , except the lognormal distribution. Also we see that the estimation improve

Measuring the efficiency of postgraduate and undergraduate programs is one of the essential elements in educational process. In this study, colleges of Baghdad University and data for the academic year (2011-2012) have been chosen to measure the relative efficiencies of postgraduate and undergraduate programs in terms of their inputs and outputs. A relevant method to conduct the analysis of this data is Data Envelopment Analysis (DEA). The effect of academic staff to the number of enrolled and alumni students to the postgraduate and undergraduate programs are the main focus of the study.

The objective of this paper is to define and introduce a new type of nano semi-open set which called nano -open set as a strong form of nano semi-open set which is related to nano closed sets in nano topological spaces. In this paper, we find all forms of the family of nano -open sets in term of upper and lower approximations of sets and we can easily find nano -open sets and they are a gate to more study.  Several types of nano open sets are known, so we study relationship between the nano -open sets with the other known types of nano open sets in nano topological spaces. The Operators such as nano -interior and nano -closure are the part of this paper.

 In this paper, we introduce and study the concept of a new class of generalized closed set which is called generalized b*-closed set in topological spaces ( briefly .g b*-closed) we study also. some of its  basic properties and investigate the relations between the associated topology. 

This paper addresses the nature of Spatial Data Infrastructure (SDI), considered as one of the most important concepts to ensure effective functioning in a modern society. It comprises a set of continually developing methods and procedures providing the geospatial base supporting a country’s governmental, environmental, economic, and social activities. In general, the SDI framework consists of the integration of various elements including standards, policies, networks, data, and end users and application areas. The transformation of previously paper-based map data into a digital format, the emergence of GIS, and the Internet and a host of online applications (e.g., environmental impact analysis, navigation, applications of VGI dat

In this paper, Pentacene based-organic field effect transistors (OFETs) by using different layers (monolayer, bilayer and trilayer) for three different gate insulators (ZrO2, PVA and CYEPL) were studied its current–voltage (I-V) characteristics by using the gradual-channel approximation model. The device exhibits a typical output curve of a field-effect transistor (FET). Source-drain voltage (Vds) was also investigated to study the effects of gate dielectric on electrical performance for OFET. The effect of capacitancesemiconductor in performance OFETs was considered. The values of current and transconductance which calculated using MATLAB simulation. It exhibited a value of current increase with increasing source-drain voltage.

In this paper, Pentacene based-organic field effect transistors (OFETs) by using different layers (monolayer, bilayer and trilayer) for three different gate insulators (ZrO2, PVA and CYEPL) were studied its current–voltage (I-V) characteristics by using the gradual-channel approximation model. The device exhibits a typical output curve of a field-effect transistor (FET). Source-drain voltage (Vds) was also investigated to study the effects of gate dielectric on electrical performance for OFET. The effect of capacitance semiconductor in performance OFETs was considered. The values of current and transconductance which calculated using MATLAB simulation. It exhibited a value of current increase with increasing source-drain voltage.