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The optical constants of amorphous silicon nanostructures

There is of great importance to know the values of the optical constants of materials due to their relationship with the optical properties and then with their practical applications. For this reason, it was proposed to study the optical constants of amorphous silicon nanostructures (quantum well, quantum wire, and quantum dot) because of their importance in the world of optical applications. In this study, it was adopted the Herve and Vandamme (HV) model of the refractive index because it was found that this model has very good optical properties for almost all semiconductors. Also, it was carried out by applying experimental results for the energy gaps of these three nanostructures, which makes the results of the theoretical calculations that were more realistic. The optical constants were studied as a function of the energy of the spectrum, which ranged from the ultraviolet region to the infrared region. The sizes of the three nanostructures ranged from 1nm to 10 nm. There are two important factors in determining the results, namely, the increase in the degree of quantum confinement of nanostructures and the decrease in the size of these structures, as it is noted that the absorption coefficient, refractive index, extinction coefficient, and the dielectric constant decrease by the influence of these two factors, taking into account the shifting of energy for each of these constants.

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Publication Date
Thu Apr 18 2019
Journal Name
Iraqi Journal Of Science
Optimization of Rutile/Anatase Ratio in Titanium Dioxide Nanostructures prepared by DC Magnetron Sputtering Technique

Mixed phase rutile/anatase of TiO2 was prepared and studied by a closed field DC magnetron sputtering configuration (CFDCMS). It was found that the contents of rutile increased from the ratio of 38% to 53% as the deposition time increased from 3.5 hours to 4.5 hours.
The photocatalytic activity of the mixed phase rutile/anatase TiO2 was measured by monitoring the degradation of the blue methylene dye in an aqueous solution, under exposure to UV-radiation, using UV-vis absorption spectroscopy. It was proven that the photocatalytic activity in the mixed phase (TiO2) is a function of rutile content reaching a maximum value at 53% rutile. Thus, the effect of synergy between anatase- TiO2 and rutile- TiO2 was observed. It was observed that

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Publication Date
Tue Dec 13 2022
Journal Name
Emergent Materials
Spectroscopic characteristics of highly pure metal oxide nanostructures prepared by DC reactive magnetron sputtering technique

In this work, metal oxide nanostructures, mainly copper oxide (CuO), nickel oxide (NiO), titanium dioxide (TiO2), and multilayer structure, were synthesized by the DC reactive magnetron sputtering technique. The effect of deposition time on the spectroscopic characteristics, as well as on the nanoparticle size, was determined. A long deposition time allows more metal atoms sputtered from the target to bond to oxygen atoms and form CuO, NiO, or TiO2 molecules deposited as thin films on glass substrates. The structural characteristics of the final samples showed high structural purity as no other compounds than CuO, NiO, and TiO2 were found in the final samples. Also, the prepared multilayer structures did not show new compounds other than th

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Publication Date
Sat Jan 30 2021
Journal Name
Iraqi Journal Of Science
Signature of Plasmonic Nanostructures Synthesised by Electrical Exploding Wire Technique on Surface-Enhanced Raman Scattering

This work aims to fabricate two types of plasmonic nanostructures by electrical exploding wire (EEW) technique and study the effects of the different morphologies of these nanostructures on the absorption spectra and Surface-Enhanced Raman Scattering (SERS) activities, using Rhodamine 6G as a probe molecule. The structural properties of these nanostructures were examined using X-Ray diffraction (XRD). The morphological properties were examined using field emission scanning electron microscopy (FESEM) and scanning transmission electron microscopy (STEM). The absorption spectra of the mixed R6G laser dye (concentration 1×10-6 M) with prepared nanostructures were examined by double beam UV-Vis Spectrophotometer. The Raman spe

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Publication Date
Tue Mar 17 2020
Journal Name
Optical And Quantum Electronics
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Publication Date
Wed Jan 19 2022
Journal Name
Iraqi Journal Of Science
Optimization of photoluminescence properties of Porous silicon by adding gold nanoparticles

In this work, the photoluminescence spectra (PL) of porous silicon (PS) have been modified by adding gold nanoparticles (AuNPs) to PS layer. PS was produced via Photo electro-chemical etching (PECE) method of n-type Si wafer with resistivity of about (10 Ω.cm) and (100) orientation. Laser wavelength of (630 nm) and illumination intensity of about (30 mW/cm2), etching current density of (10mA/cm2), and etching time of (4 min) were used during the etching process. The bare PS before metallic deposition process and porous silicon/gold nanoparticles (PS/AuNPs) structures were investigated by X-Ray Diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-Ray (EDX). The photoluminescence spectra were investigated as a fu

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Publication Date
Thu Oct 15 2015
Journal Name
Journal Of Physical Vapor Deposition Science And Technology (jpvdst)
Publication Date
Tue Sep 11 2018
Journal Name
Iraqi Journal Of Physics
Responsivity of porous silicon for blue visible light with high sensitivity

In this work, porous silicon (PS) are fabricated using electrochemical etching (ECE) process for p-type crystalline silicon (c-Si) wafers of (100) orientation. The structural, morphological and electrical properties of PS synthesized at etching current density of (10, 20, 30) mA/cm2 at constant etching time 10 min are studied. From X-ray diffraction (XRD) measurement, the value of FWHM is in general decreases with increasing current density for p-type porous silicon (p-PS). Atomic force microscope (AFM) showed that for p-PS the average pore diameter decreases at 20 mA. Porous silicon which formed on silicon will be a junction so I-V characteristics have been studied in the dark to calculate ideality factor (n), and saturation current (Is

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Publication Date
Tue Jan 01 2019
Journal Name
Iraqi Journal Of Agricultural Sciences
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Publication Date
Mon Jun 01 2020
Journal Name
Iraqi Journal Of Physics
Prospect of CW Raman Laser in Silicon- on- Insulator Nano-Waveguides
 
Numerical analysis predicts that continuous-wave (CW) Raman lasing is possible in Silicon-On-insulator (SOI) nano-waveguides, despite of presence of free carrier absorption. The scope of this paper lies on lasers for communication systems around 1550 nm wavelength. Two types of waveguide structures Strip and Rib waveguides have been incorporated. The waveguide structures have designed to be 220 nm in height. Three different widths of (350, 450, 1000) nm were studied. The dependence of lasing of the SOI Raman laser on effective carrier lifetime was discussed, produced by tow photon absorption. At telecommunication wavelength of 1550 nm, Raman lasing threshold was calculated to be 1.7 mW in Rib SOI waveguide with dimen
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Publication Date
Sun Feb 24 2019
Journal Name
Iraqi Journal Of Physics
Morphology, chemical and electrical properties of CdO Nanoparticles on porous silicon

In this paper, CdO nanoparticles prepared by pulsed laser deposition techniqueonto a porous silicon (PS) surface prepared by electrochemical etching of p-type silicon wafer with resistivity (1.5-4Ω.cm) in hydrofluoric (HF) acid of 20% concentration. Current density (15 mA/cm2) and etching times (20min). The films were characterized by the measurement of AFM, FTIR spectroscopy and electrical properties.

  Atomic Force microscopy confirms the nanometric size.Chemical components during the electrochemical etching show on surface of PSchanges take place in the spectrum of CdO deposited PS when compared to as-anodized PS.

The electrical properties of prepared PS; namely current density-voltage charact

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