The current study was aimed to examine the effects of two types of Arbuscular mycorrhizal Fungi (F. mosseae, C. etunicatum) on the onion plant under two water conditions (normal irrigation and drought treatment). This study has aspects related to improve tolerance of an onion plant (Allium cepa L.) to water stress situations with taking in consideration regulate physiological Growth Parameters PGP of plant and biochemical [fungal root colonization, dry weight of mycorrhizal roots, Spore density of AM fungi, Relative water content, proline content, total carotenoids, Soluble protein content and Phosphorous application] in the existence or lack of AMF. The results indicate that the drought dealing producing increase of spore density of AM fungi, proline content, total carotenoids and soluble protein content except Fugal root colonization, plant root dry weight, Relative water content and Phosphorous uptake which were increased when associating with normal irrigation. The plants inoculated by each F. mosseae, C. etunicatum was noted a significant differences (P < 0.05) increase in some PGP comparing with uninoculated. The highest values of PGP were recorded when onion plant inoculated by two types of AMF. Normal irrigation was showed less enhancement of plants compared with plants that obtained drought stress. The inoculcation by both types of AMF resulted in increasing in an onion plant uptake and protection against drought stress, while the case of relative water content showed relatively similar values in both conditions comparing with non- AMF onion plant.
In this paper, Pentacene based-organic field effect transistors (OFETs) by using different layers (monolayer, bilayer and trilayer) for three different gate insulators (ZrO2, PVA and CYEPL) were studied its current–voltage (I-V) characteristics by using the gradual-channel approximation model. The device exhibits a typical output curve of a field-effect transistor (FET). Source-drain voltage (Vds) was also investigated to study the effects of gate dielectric on electrical performance for OFET. The effect of capacitance semiconductor in performance OFETs was considered. The values of current and transconductance which calculated using MATLAB simulation. It exhibited a value of current increase with increasing source-drain voltage.
in this paper copper oxide (cuO thin films were prepared by the method of vacum thermal evaporation a pressure.
the bank sect for any country is very important because its represent a major nerve to feed a verity economic and finance activities .development any state measure by development banking sets and its represent important factor to investors attract . and because important of this subject ,teen accounting rule is a specialized for it .its related by Disclosures in the Financial Statements Of Banks and The Similar Institutions, its accredit by auditing and accounting standard consul in republic of Iraq.in date 10/28/1998. &
... Show MoreIn this paper Alx Ga1-x As:H films have been prepared by using new deposition method based on combination of flash- thermal evaporation technique. The thickness of our samples was about 300nm. The Al concentration was altered within the 0 x 40.
The results of X- ray diffraction analysis (XRD) confirmed the amorphous structure of all AlXGa1-x As:H films with x 40 and annealing temperature (Ta)<200°C. the temperature dependence of the DC conductivity GDC with various Al content has been measured for AlXGa1-x As:H films.
We have found that the thermal activation energy Ea depends of Al content and Ta, thus the value of Ea were approximately equal to half the value of optical gap.
GFRP was employed in constructions as an alternative to steel, which has many advantages like lightweight, large tensile strength and resist corrosion. Existing researches are insufficient in studying the influence of hybrid reinforced concrete composite columns encased by GFRP I-section (RCCCEG) and I-section steel (RCCCES). In this study twenty one (RC) specimens of a cross-section of 130 mm × 160 mm, with different length (long 1600 mm and short 750 mm) were encased by using I-section (steel and GFRP) and tested under various loading (concentric, eccentric and flexural loads). The test was focused on the influence of many parameters; load-carrying capacity, mode of failure, deformation and drawing an interaction diagram (N-
... Show More
(6)
(6)
Silver selenide telluride Semiconducting (Ag2Se0.8Te0.2) thin films were by thermal evaporation at RT with thickness350 nm at annealing temperatures (300, 348, 398, and 448) °K for 1 hour on glass substrates .using X-ray diffraction, the structural characteristics were calculated as a function of annealing temperatures with no preferential orientation along any plane. Atomic force microscopy (AFM) and X-ray techniques are used to analyze the Ag2SeTe thin films' physical makeup and properties. AFM techniques were used to analyze the surface morphology of the Ag2SeTe films, and the results showed that the values for average diameter, surface roughness, and grain size mutation increased with annealing temperature (116.36-171.02) nm The transm
... Show MoreThe aim of this study is to show the concepts of nuclear shape and the geometrical picture to the even-even nuclei of 164,166,168E isotopes in the context of the Interacting boson Model IBM-1. The energy spectra were calculated and the effective charge values (eB) of the electromagnetic transition strength were obtained and used to calculate the B(E2) values of the electromagnetic transitions and the quadrupole moment Q of 2+ -states. The Hamiltonian parameters were calculated by taking in account the properties of these nuclei. Comparison were made with the available experimental data and included in tables. The geometrical picture of these nuclei were looked at by calculating the deformation which were represented by the potentia
... Show More