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Structure, Optical and a Novel Approach to Low-Temperature Gas Sensing Using (SnO2)1–x(TiO2:Bi2O3)x Thin Films for NO2 Detection
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Tin oxide: titanium oxide: bismuth oxide (SnO2 )1–x(TiO 2 :Bi 2O3 ) x composites with different loading ratios (0, 0.1, 0.15, 0.2, 0.25 and 0.3) have numerous new application in microelectronics, sensors, and capacitors. This work concerned with the synthesis of (SnO 2 )1–x(TiO 2 :Bi 2O3 ) xcomposites as well as, thin films which were deposited on glass substrates as well as, silicon wafers by using pulsed laser deposition. The diffraction pattern confirms the anatase teteragonal phase of undoped tin oxide. It was observed some peaks related with titanium and bismuth oxides appeared at high loading ratios. Upon the transmission-spectra analysis, the undoped samples declared transmittance 60–67% in a visible spectrum, and the energy gap were found to decreases from 3.35 to 1.1 eV when loading ratio increases from 0 to 0.15 and then return to increases, this indicate that our samples are good materials used as absorber layers for photovoltaic applications. The physical quantities, like the refractive index, the extinction coefficient, and the real and imaginary dielectric constants, were determined. The results show that as the loading rises from 0 to 0.15, the refractive index and real dielectric constants becomes smaller and then grow up, while the extinction coefficient and imaginary dielectric constants change in reverse manner. The gas sensing measurements showed that the highest sensitivity (283% was obtained from (SnO 2 ) 0.7(TiO 2 :Bi 2O3 ) 0.3/c-Si at room temperature in the presence of NO 2with the lowest response time 22 s respectively. It seems convenient to conclude that titanium oxide : bismuth oxide codoping bring favorable optical characteristics, as well as, enhanced the sensitivity at room temperature.

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Publication Date
Fri Jan 01 2021
Journal Name
Aip Conference Proceedings
Structural, morphology and optical properties of AlxSb1-x thin films prepared by Pulsed laser deposition (PLD)
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AlxSb1-x compounds with different aluminum content(x=0.1, 0.3 , 0.5 , 0.7 and 0.9 ) were prepared by mixing the two elements in the appropriate ratios in quartz ampulla which then sealed and put in an oven at 1273 and left 5 hours. The obtained powder were grinded and then pressed in pellets shape which will be the target to prepare thin films samples. AlxSb1-x thin films were synthesized by PLD with ~ 150nm in thickness .The structures of AlxSb1-x powders and thin films were determined using X–ray diffraction. The data revealed that all the prepare AlxSb1-x bulk and thin films have polycrystalline . The results showed that increasing of Al reduced the crystallinity of the prepared samples at the first but then the opposite take pla

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Publication Date
Sat Jan 01 2011
Journal Name
Iraqi Journal Of Physics
Study of annealing effect on some Optical Properties of CuIn(SexTe1-x)2 Thin Films
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The optical properties for the components CuIn(SexTe1-x)2 thin films with both values of selenium content (x) [0.4 and 0.6] are studied. The films have been prepared by the vacuum thermal evaporation method with thickness of (250±5nm) on glass substrates. From the transmittance and absorbance spectra within the range of wavelength (400-900)nm, we determined the forbidden optical energy gap (Egopt) and the constant (B). From the studyingthe relation between absorption coefficient (α) photon energy, we determined the tails width inside the energy gap.
The results showed that the optical transition is direct; we also found that the optical energy gap increases with annealing temperature and selenium content (x). However, the width of l

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Publication Date
Tue Jan 08 2019
Journal Name
Iraqi Journal Of Physics
Preparation and characterization of mixed SnO2:CdO thin films as gas sensor
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In this study, tin oxide (SnO2) and mixed with cadmium oxide (CdO) with concentration ratio of (5, 10, 15, 20)% films were deposited by spray pyrolysis technique onto glass substrates at 300ºC temperature. The structure of the SnO2:CdO mixed films have polycrystalline structure with (110) and (101) preferential orientations. Atomic force microscopy (AFM) show the films are displayed granular structure. It was found that the grain size increases with increasing of mixed concentration ratio. The transmittance in visible and NIR region was estimated for SnO2:CdO mixed films. Direct optical band gap was estimated for SnO2 and SnO2 mixed CdO and show a decrease in the energy gap with increasing mixing ratio. From Hall measurement, it was fou

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Publication Date
Sun Jun 12 2011
Journal Name
Baghdad Science Journal
Study the effective of annealing on the structural and sensitivity properties for SnO2 thin films to CO2 Gas
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In this research thin films from SnO2 semiconductor have been prepared by using chemical pyrolysis spray method from solution SnCl2.2H2O at 0.125M concentration on glass at substrate temperature (723K ).Annealing was preformed for prepared thin film at (823K) temperature. The structural and sensing properties of SnO2 thin films for CO2 gas was studied before and after annealing ,as well as we studied the effect temperature annealing on grain size for prepared thin films .

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Publication Date
Mon Oct 01 2012
Journal Name
Iraqi Journal Of Physics
The effect of sulfide content(x) on the electrical properties of (ZnSx Se1-x) thin films
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Thin films of ZnSxSe1-x with different sulfide content(x)
(0, 0.02, 0.04, 0.06, 0.8, and 0.1), thickness (t) (0.3, 0.5, and 0.7 μm) and annealing temperature (Ta) (R.T 373 and 423K) were fabricated by thermal evaporating under vacuum of 10-5 Toor on glass substrate. The results show that the increasing of sulfide content (x)and annealing temperature lead to decrease the d.c conductivity σDC of and concentration of charge carriers (nH) but increases the activation energy (Ea1,Ea2), while the increasing of t increases σDC and nH but decrease (Ea1,Ea2). The results were explained in different terms

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Publication Date
Sun Nov 01 2020
Journal Name
Iop Conference Series: Materials Science And Engineering
Investigation effect of ZnO content on the structural and electrical properties of pulsed laser deposited (NiO)<sub>1-x</sub> (ZnO)<sub>x</sub> thin films
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Abstract<p>This research is devoted to the effect of investigation of the ZnO content on the structural and electrical properties of (NiO)<sub>1-x</sub> (ZnO)<sub>x</sub> films prepared by pulsed laser precipitation on the glass substrate at room temperature. Thin-film (NiO)<sub>1-x</sub> (ZnO)<sub>x</sub> sediments were deposited with different composition ratios where x = 0, 0.2, 0.4, 0.6 and 1.0 with a thickness of n150nm. The diffraction pattern for X-ray analysis reveals that the structure of the prepared thin films is identical with the cubic phase and hexadecimal stage of x = 0 and 0.1, respectively while the structure is mixed with the remaining x </p> ... Show More
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Publication Date
Sat Aug 01 2026
Journal Name
Journal Of Materials Science: Materials In Electronics
Structural and gas sensing properties of Au-doped TiO2:Fe2O3: CeO2 thin films prepared by chemical spray pyrolysis
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In this study, thin flms containing titanium dioxide (TiO₂), iron (III) oxide (Fe2O3) and cerium oxide (CeO2), with varying Fe2O3:CeO2 concentrations ranging from 0 to 30 wt% and 10 wt% gold nanoparticles (AuNPs), were prepared on glass using chemical spray pyrolysis. The structural, morphological, and sensing properties of the prepared thin flms were examined. XRD analysis revealed that a phase transformation occurred based on the dopant concentration: flms with x = 0 or 0.1 formed a polycrystalline anatase structure, whereas those with intermediate concentrations (x = 0.15 or 0.20) were amorphous. At higher doping concentrations (x = 0.25, 0.30), the structure developed a hematite Fe2O3, CeO2 and Au phase. Morphologicall

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Publication Date
Mon Nov 01 2010
Journal Name
Iraqi Journal Of Physics
The Effect of Germanium Content(x) on the Electrical Properties of (Gex S1-x) Thin Films
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Thin films of GexS1-x were fabricated by thermal evaporating under vacuum of 10-5Toor on glass substrate. The effect of increasing of germanium content (x) in sulfide films on the electrical properties like d.c conductivity (σDC), concentration of charge carriers (nH) and the activation energy (Ea) and Hall effect were investigated. The measurements show that (Ea) increases with the increasing of germanium content from 0.1to0.2 while it get to reduces with further addition, while charge carrier density (nH) is found to decrease and increase respectively with germanium content. The results were explained in terms of creating and eliminating of states in the band gap

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Publication Date
Sun Mar 01 2020
Journal Name
Journal Of Mechanical Science And Technology
Damage detection in glass/epoxy composite structure using 8–12 GHz X-band
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Publication Date
Mon Feb 28 2022
Journal Name
Structural Chemistry
Sensitivity of SnO2 nanoparticles/reduced graphene oxide hybrid to NO2 gas: A DFT study
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Abstract<p>The sensitivity of SnO<sub>2</sub> nanoparticles/reduced graphene oxide hybrid to NO<sub>2</sub> gas is discussed in the present work using density functional theory (DFT). The SnO<sub>2</sub> nanoparticles shapes are taken as pyramids, as proved by experiments. The reduced graphene oxide (rGO) edges have oxygen or oxygen-containing functional groups. However, the upper and lower surfaces of rGO are clean, as expected from the oxide reduction procedure. Results show that SnO<sub>2</sub> particles are connected at the edges of rGO, making a p-n heterojunction with a reduced agglomeration of SnO2 particles and high gas sensitivity. The DFT results are in</p> ... Show More
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