Preferred Language
Articles
/
uRjjcpQBVTCNdQwCQxdN
Photoconductivity and Performance of Mn2+ and Ce3+ Doped ZnS Quantum Dot Detectors
...Show More Authors

Mn2+ and Ce3+ Doped ZnS nanocrystals were prepared by a simple microwave irradiation method under mild condition. The starting materials for the synthesis of Mn2+ and Ce3+ Doped ZnS P nanocrystals were zinc acetate as zinc source, thioacetamide as a sulfur source, manganese chloride and Cerium chloride as manganese and cerium sources respectively (R & M Chemical) and ethylene glycol as a solvent. All chemicals were analytical grade products and used without further purification. The nanocrystals of Mn2+ and Ce3+ Doped ZnS P with cubic structure were characterized by X-ray powder diffraction (XRD), the morphology of the film is seen by field effect scanning electron microscopy (FESEM). The composition of the samples is analyzed by EDS. The spectral response of Mn2+ and Ce3+ Doped ZnS nanocrystals was studied. The values of responsively, specific detectivity and quantum efficiency for Ce3+ Doped ZnS are higher than that for Mn2+ Doped ZnS.

Publication Date
Tue Sep 01 2020
Journal Name
Iraqi Journal Of Physics
The magnetic switch manufacturing by using ferrofluid and ferrofluid doped copper nanoparticles
...Show More Authors

In this work, a magnetic switch was prepared using two typesof ferrofluid materials, the pure ferrofluid and ferrofluid doped with copper nanoparticles (10 nm). The critical magnetic field (Hc) and the state of magnetic saturation (Hs) were studied using three types of laser sources. The main parameters of the magnetic switch measured using pure ferrofluid and He-Ne Laser source were Hc(0.5 mv, 0.4 G), Hs (8.5 mv, 3 G). For the ferrofluid doped with copper nanoparticles were Hc (1 mv, 4 G), Hs (15 mv, 9.6 G), Using green semiconductor laser for the Pure ferrofluid were Hc (0.5 mv, 0.3 G) Hs (15 mv, 2.9 G). While the ferrofluid doped with copper nanoparticles were Hc (0.5 mv, 1 G), Hs (12 mv, 2.8 G) and by using the violet semiconductor l

... Show More
View Publication Preview PDF
Crossref
Publication Date
Tue Nov 20 2012
Journal Name
J. Of University Of Anbar For Pure Science
Laser Processing For Nanoscale Size Quantum Wires of AlGaAs/GaAs
...Show More Authors

In this work we investigate and calculate theoretically the variation in a number of optoelectronic properties of AlGaAs/GaAs quantum wire laser, with emphasis on the effect of wire radius on the confinement factor, density of states and gain factor have been calculated. It is found that there exist a critical wire radius (rc) under which the confinement of carriers are very weak. Whereas, above rc the confinement factor and hence the gain increase with increasing the wire radius.

Publication Date
Tue Mar 12 2024
Journal Name
Semiconductor Physics, Quantum Electronics And Optoelectronics
Numerical study of single-layer and interlayer grating polarizers based on metasurface structures for quantum key distribution systems
...Show More Authors

Polarization is an important property of light, which refers to the direction of electric field oscillations. Polarization modulation plays an essential role for polarization encoding quantum key distribution (QKD). Polarization is used to encode photons in the QKD systems. In this work, visible-range polarizers with optimal dimensions based on resonance grating waveguides have been numerically designed and investigated using the COMSOL Multiphysics Software. Two structures have been designed, namely a singlelayer metasurface grating (SLMG) polarizer and an interlayer metasurface grating (ILMG) polarizer. Both structures have demonstrated high extinction ratios, ~1.8·103 and 8.68·104 , and the bandwidths equal to 45 and 55 nm for th

... Show More
View Publication Preview PDF
Scopus Clarivate Crossref
Publication Date
Tue Jan 01 2019
Journal Name
Energy Procedia
Threshold Current Density of Al0.1Ga0.9N/GaN Triple Quantum Well Laser
...Show More Authors

Semiconductor laser is used in processing many issues related to the scientific, military, medical, industrial and agricultural fields due to its unique properties such as coherence and high strength where GaN-based components are the most efficient in this field. Current technological developments mention to the strong connection of GaN with sustainable electronic and optoelectronic devices which have high-efficiency. The threshold current density of Al0.1Ga0.9N/GaN triple quantum well laser structure was investigated to determine best values of the parameters affecting the threshold current density that are well width, average thickness of active region, cavity length, reflectivity of cavity mirrors and optical confinement factor. The opt

... Show More
View Publication
Scopus (6)
Crossref (5)
Scopus Clarivate Crossref
Publication Date
Wed May 25 2022
Journal Name
Iraqi Journal Of Science
Gamma-Ray Shielding Effectiveness of Clay and Boron Doped Clay Material at Different Thicknesses
...Show More Authors

      In this work, the gamma-ray shielding parameters of red clay and boron-doped red clay with different sample thicknesses are theoretically and experimentally reported. These shielding parameters are considered at a photon energy of 0.662 MeV emitted from 137Cs. The theoretical calculations are demonstrated using the XCom software program, while a scintillation detector, NaI(TI), with an efficiency of 98% is used to attain the experimental results of the mass attenuation coefficient of the prepared samples. The acquired results show that the boron-doped clay delivers a higher mass attenuation coefficient as compared to those of pure clay. Additionally, the mass attenuation coefficient exhibits an increasing behavior w

... Show More
View Publication Preview PDF
Scopus (1)
Scopus Crossref
Publication Date
Tue Jan 30 2018
Journal Name
Iraqi Journal Of Science
Structural and dielectric properties of Zr doped BaTiO3 synthesized by microwave assisted chemical route
...Show More Authors

Lead-free ferroelectric nano ceramics of BaZrxTi1-xO3 (x=0.1, 0.2 and 0.3) were prepared by means of microwave assisted chemical route. The structural, dielectric and electrical properties were examined. The crystalline structure of the specimens was studied by X-ray diffraction patterns. All the samples showed pure single phase of perovskite structure with space group of I4/mcm. X-ray diffraction data illustrated that there is no secondary phases exist. Structural and electrical properties of barium titanate ceramics are influenced significantly by small additions of Zr. The electrical conductivity showed higher values at x=0.2 and decreased at higher Zr content. The Hall charge mobility is found

... Show More
View Publication Preview PDF
Publication Date
Wed Oct 28 2020
Journal Name
Iraqi Journal Of Science
Synthesis and Characterization of Aluminum Doped Zinc Oxide Nanostructures by Nd:YAG Laser in Liquid
...Show More Authors

Aluminum doped zinc oxide nanoparticles (AZO) with different doping concentrations were prepared by Nd-YAG laser ablation of target in deionized water. The characterization of these nanoparticles was performed using Fourier transform infrared (FTIR)  spectroscopy,  scanning electron microscopy (SEM) and photoluminance spectroscopy (PL).  FTIR spectra confirmed the formation  of vibrational bonds for ZnO NPs and AZO NPs. SEM images illustrated that the size and shape of the NPs changed with changing the number of laser pulses. Photoluminescence peaks exhibited two emission peaks, one at the UV region and the second in the visible region, which were modified as the number of laser pulses and doping concentration were ch

... Show More
View Publication Preview PDF
Scopus (14)
Crossref (9)
Scopus Crossref
Publication Date
Mon Aug 01 2016
Journal Name
Indian Journal Of Natural Sciences
Effect of Gamma Radiation on the A.C Electrical and Dielectric Properties of Prepared Pure and Doped Polyaniline Salt
...Show More Authors

Purepolyaniline and doped with hydrochloric acid was prepared in different molarities at room temperature. The a.c electrical properties were stadied.AC conductivityσac (ω), is found to vary as ωS in the frequency range (100Hz-10MH), S< 1and decreases indicating a dominate hopping process. Thedielectric constant ε1and dielectric loss ε2 have been determined for bulk polyaniline. ε1 decrease with the increase frequency. Electrical conductivity measurements increase with the increases both of the amount of HCl and the dose of radiation. The dielectric investigations show decrease with dose radiation.

Preview PDF
Publication Date
Wed Jun 01 2022
Journal Name
Baghdad Science Journal
Preparation and study of the Structural, Morphological and Optical properties of pure Tin Oxide Nanoparticle doped with Cu
...Show More Authors

            In this study, pure SnO2 Nanoparticles doped with Cu were synthesized by a chemical precipitation method. Using SnCl2.2H2O, CuCl2.2H2O as raw materials, the materials were annealed at 550°C for 3 hours in order to improve crystallization. The XRD results showed that the samples crystallized in the tetragonal rutile type SnO2 stage. As the average SnO2 crystal size is pure 9nm and varies with the change of Cu doping (0.5%, 1%, 1.5%, 2%, 2.5%, 3%),( 8.35, 8.36, 8.67, 9 ,7, 8.86)nm respectively an increase in crystal size to 2.5% decreases at this rate and that the crystal of SnO2 does not change with the introduction of Cu, and S

... Show More
View Publication Preview PDF
Scopus (18)
Crossref (6)
Scopus Clarivate Crossref
Publication Date
Thu Feb 07 2019
Journal Name
Iraqi Journal Of Laser
Synthesis Characterization and Optical Properties of Nanostructured Zinc Sulfide Thin Films Obtained by Spray Pyrolysis Deposition
...Show More Authors

In this work, nanostructure zinc sulfide (ZnS) thin films at temperature of substrate 450 oC and thickness (120) nm have been produced by chemical spray pyrolysis method. The X-Ray Diffraction (XRD) measurements of the film showed that they have a polycrystalline structure and possessed a hexagonal phase with strong crystalline orientation of (103). The grain size was measured using scanning electron microscope (SEM) which was approximately equal to 80 nm. The linear optical measurements showed that ZnS nanostructure has direct energy gap. Nonlinear optical properties experiments were performed using Q-switched 532 nm Nd:YAG laser Z-scan system. The nonlinear refractive index (n2) and nonlinear absorption coefficient (β) estimated for Z

... Show More
View Publication Preview PDF