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Fabrication and Improvement of Optoelectronic Properties of Copper Chalcogenide Thin Films
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Publication Date
Tue Oct 01 2024
Journal Name
Journal Of Physics: Conference Series
An Effect of Al on the Properties of ZnIn<sub>2</sub>Se<sub>4</sub> Thin Film
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Abstract<p>Zinc-indium-selenide ZnIn<sub>2</sub>Se<sub>4</sub> (ZIS) ternary chalcopyrite thin film on glass with a 500 nm thickness was fabricated by using the thermal evaporation system with a pressure of approximately 2.5×10<sup>−5</sup> mbar and a deposition rate of 12 Å/s. The effect of aluminum (Al) doping with 0.02 and 0.04 ratios on the structural and optical properties of film was examined. The utilization of X-ray diffraction (XRD) was employed to showcase the influence of aluminum doping on structural properties. XRD shows that thin ZIS-pure, Al-doped films at RT are polycrystalline with tetragonal structure and preferred (112) orientation. Where the </p> ... Show More
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Publication Date
Fri May 25 2018
Journal Name
Journal Of Physics: Conference Series
Fabrication &amp; Characterization of AIAS/pSi Heterojunction Solar Cell
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Silver Indium Aluminum Selenium AgIn1xAlxSe2 AIAS for x=01 thin films was deposited by thermal evaporation at RT and different︣︢︡ ︠︣1thickness 100 150 and 200 nm on the glass Substrate and p2Si wafer to produce AIAS/p3Si heterojunctionsolarcell4 Structural optical electrical and photovoltaicproperties6 are investigated for the samples XRD analysis reveals that all the deposited AIAS films show polycrystalline structure without any change due to increase of thickness Average diameter and roughness calculated from AFM images shows an increase in its value with increasing thickness The optical absorbance and transmittance for samples are measured using a spectrometer type UV Visible 1800 spectra1photometer to study the energy6gap The

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Publication Date
Sat Jul 01 2017
Journal Name
Energy Procedia
HgBa 2 Ca n-1 Cu n O 2n+2+δ Superconducting thin films Prepared by Pulsed Laser Deposition
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Publication Date
Sun Nov 01 2020
Journal Name
Iop Conference Series: Materials Science And Engineering
SnO<sub>2</sub> doped In<sub>2</sub>O<sub>3</sub> thin films as reducing gas sensors
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Summery<p>This research includes description of the x-ray diffraction, morphology and sensing measurements of SnO<sub>2</sub> doped In<sub>2</sub>O<sub>3</sub> thin films synthesized by pulsed laser deposition method on glass and silicon wafer substrates. In2O3:SnO2 powders were obtained by mixing In2O3 with SnO2 in the desired ratio, and calcination the at temperature 1273 K for 5 hours. SnO<sub>2</sub> doped In<sub>2</sub>O<sub>3</sub> thin films with different ratios (0, 0.01, 0.03, 0.05, 0.07, and 0.09% wt.) were prepared using pulsed laser deposition method. The structural investigation using X-ray diffraction revealed that the mai</p> ... Show More
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Publication Date
Tue Jan 01 2019
Journal Name
Energy Procedia
Evaluation of the optical properties for thick films of epoxy-diamond paste blend prepared by the casting method
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Publication Date
Wed Dec 17 2025
Journal Name
Journal Of Physics: Condensed Matter
Effects of silver oxide nanoparticles on the gas sensing properties of carbon nanotube / poly(3-hexylthiophene) composite films
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This study investigates the influence of silver oxide (Ag₂O) nanoparticles on the gas-sensing properties of carbon nanotube (CNT) and poly(3-hexylthiophene) (P3HT) composite films. The goal is to enhance the sensitivity and stability of CNT/P3HT-based gas sensors for nitrogen dioxide (NO₂) detection. CNTs and P3HT are composited at various mass ratios, followed by integrating Ag₂O nanoparticles to improve gas interaction and electronic properties. Structural and morphological analyses, including x-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscopy, and energy dispersive x-ray spectroscopy, ascertain the successful incorporation of Ag₂O into the composites and reveal its role in impr

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Publication Date
Mon Mar 08 2021
Journal Name
Baghdad Science Journal
Study the influence of Annealing upon electrical properties of The prepared films ZnSe by Thermal evaporation in Vacuum
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Thin films of ZnSe arc deposited on glass substrates by thermal evaporation in vacuum with different thickness (1000, 2700, 4000) A° temperature (293-373) °K are studies the electrical properties before and after annealing. The result show decrease D.0 conductivity and increasing the activation energy Eat.

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Publication Date
Sun Sep 07 2008
Journal Name
Baghdad Science Journal
Study the effect by CO2 laser on some optical properties of (Cd) thin film doping by Ni
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In this research study the effect of irradiation by (CW) CO2 laser on some optical properties of (Cds) doping by Ni thin films of (1)µm thickness has been prepared by heat evaporation method. (X-Ray) diffraction technique showed the prepared films before and after irradiation are ploy crystalline hexagonal structure, optical properties were include recording of absorbance spectra for prepared films in the range of (400-1000) nm wave lengths, the absorption coefficient and the energy gap were calculated before and after irradiation, finally the irradiation affected (CdS) thin films by changing its color from the Transparent yellow to dark rough yellow and decrease the value absorption coefficient also increase the value of energy gap.

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Crossref
Publication Date
Thu May 04 2023
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Influence Annealing on the Physical Properties of Silver Selenide Thin Film at Different Temperatures by Thermal Evaporation
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This survey investigates the thermal evaporation of Ag2Se on glass substrates at various thermal annealing temperatures (300, 348, 398, and 448) °K. To ascertain the effect of annealing temperature on the structural, surface morphology, and optical properties of Ag2Se films, investigations and research were carried out. The crystal structure of the film was described by Xray diffraction and other methods.The physical structure and characteristics of the Ag2Se thin films were examined using X-ray and atomic force microscopy (AFM) based techniques. The Ag2Se films surface morphology was examined by AFM techniques; the investigation gave average diameter, surface roughness, and grain size mutation values with increasing annealing temperature

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Publication Date
Thu Jan 01 2026
Journal Name
Chalcogenide Letters
Influence of Germanium Substitution on the DC Electrical Properties and Energy Density of States in Pb&lt;sub&gt;50−x&lt;/sub&gt;Ge&lt;sub&gt;x&lt;/sub&gt;Te&lt;sub&gt;50&lt;/sub&gt; Ternary Chalcogenide Alloys
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