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Mitigation optical losses via plasmonic core/shell (Co/Gr) nanoparticles introduced in ultra-thin film silicon solar cell
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Optical losses represent one of the primary obstacles to increasing the efficiency of silicon solar cells. The recommended solution to minimize optical losses is the use of plasmonic metal nanoparticles; however, they act as recombination centers within the solar cell construction, leading to a decrease in performance. The goal of this article is to introduce cobalt/graphene nanoparticles into the solar cell to minimize the optical losses. An ultra-thin film silicon PIN solar cell of dimensions (400 ×400 ×900) nm3 with ring metal contact shape was designed and numerically investigated using COMSOL Multiphysics software version 6.2 by the finite element method (FEM). Core/shell cobalt-graphene (Co/Gr) nanoparticles are periodically introduced into the cell between two layers (electron transport and active) in a ratio of 50:50 with an inter-spacing of a similar diameter. The Co/Gr parameters, number of nanoparticles (2, 4, 6), radius (10, 20, 30) nm, and shell thickness (1, 2, 4) nm were extensively studied. In addition, the arrangement of the core/shell nanoparticle material was considered. The results manifest the best performance of the proposed cell at 4 nanoparticles of 30 nm radius with 2 nm shell thickness for Co/Gr nanoparticles to get a maximum photocurrent of 26.28 mA/cm2. It is concluded that the optical losses of the Co/Gr core/shell nanoparticles embedded in an ultra-thin film silicon solar cell are significantly reduced owing to the increment in the absorption and hence the photocurrent. This enhancement opens a new avenue for further improvements.

Publication Date
Wed Aug 01 2018
Journal Name
Iranian Journal Of Science And Technology, Transactions A: Science
Structural, Optical and Sensing Behavior of Neodymium-Doped Vanadium Pentoxide Thin Films
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Publication Date
Fri Apr 01 2022
Journal Name
Chalcogenide Letters
The dependence of the energy density states on the substitution of chemical elements in the Se6Te4-xSbx thin film
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The energy density state are the powerful factor for evaluate the validity of a material in any application. This research focused on examining the electrical properties of the Se6Te4- xSbx glass semiconductor with x=1, 2 and 3, using the thermal evaporation technique. D.C electrical conductivity was used by determine the current, voltage and temperatures, where the electrical conductivity was studied as a function of temperature and the mechanical electrical conduction were determined in the different conduction regions (the extended and localized area and at the Fermi level). In addition, the density of the energy states in these regions is calculated using the mathematical equations. The constants of energy density states are det

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Publication Date
Sat Aug 19 2023
Journal Name
Silicon
Structural and Hardness Characteristics of Silicon Nitride Thin Films Deposited on Metallic Substrates by DC Reactive Sputtering Technique
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Publication Date
Tue Jan 01 2019
Journal Name
Advances In Informatics And Computing In Civil And Construction Engineering: Proceedings Of The 35th Cib W78 2018 Conference: It In Design, Construction, And Management
Technology alternatives for workplace safety risk mitigation in construction: Exploratory study
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Publication Date
Sun Jan 01 2023
Journal Name
E3s Web Of Conferences
Mitigation of Reflection Cracking in Asphalt Concrete Overlay on Rigid Pavements
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Reflective cracking is one of the primary forms of deterioration in pavements. It is widespread when Asphalt concrete (AC) overlays are built over a rigid pavement with discontinuities on its surface. Thus, this research work aims to reduce reflection cracks in asphalt concrete overlay on the rigid pavement. Asphalt Concrete (AC) slab specimens were prepared in three thicknesses (4, 5, and 6 cm). All these specimens were by testing machine designed and manufactured at the Engineering Consulting Office of the University of Baghdad to examine for the number of cycles and loads needed to propagate the reflection cracking in the asphalt concert mixture at three temperatures (20, 30, and 30°C). It was noticed that the higher thickness A

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Publication Date
Sat May 01 2021
Journal Name
Key Engineering Materials
Synthesis and Characterization of the Thin Films NiSe2/Si Heterojunction for Solar Cells
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Thin film solar cells are preferable to the researchers and in applications due to the minimum material usage and to the rising of their efficiencies. In particular, thin film solar cells, which are designed based one transition metal chalcogenide materials, paly an essential role in solar energy conversion market. In this paper, transition metals with chalcogenide Nickel selenide termed as (NiSe2/Si) are synthesized. To this end, polycrystalline NiSe2 thin films are deposited through the use of vacuum evaporation technique under vacuum of 2.1x10-5 mbar, which are supplied to different annealing temperatures. The results show that under an annealed temperature of 525 K,

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Publication Date
Tue Jan 01 2019
Journal Name
Energy Procedia
Design and Construction of Nanostructure TiO2 Thin Film Gas Sensor Prepared by R.F Magnetron Sputtering Technique
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In this research, Mn-doped TiO2 thin films were grown on glass, Si and OIT/glass substrates by R.F magnetron sputtering technique with thicknesses (250 nm) using TiO2:Mn target under Ar gas pressure and power of 100 Watt. Through the results of X-ray diffraction, the prepared thin films are of the polycrystallization type after the process of annealing at 600°C for two hour The average crystalline size were 145.32, 280.97 and 261.23 nm for (TiO2:Mn) thin film on glass, Si and OIT/glass substrates respectively, while the measured surface roughness is between 0.981nm and 1.14 nm. The fabricated (TiO2:Mn) thin film on glass sensors have high sensitivity for hydrogen( H2 reducing gas) compared to the sensitivity for hydrogen gas on Si and OIT/

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Publication Date
Thu Oct 01 2009
Journal Name
Iraqi Journal Of Physics
Crystal Growth of Semiconductor CuAl0.4Ti0.6Se2 and studding the Structural Properties of its Alloy and Thin Film
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Tetragonal compound CuAl0.4Ti0.6Se2 semiconductor has been prepared by
melting the elementary elements of high purity in evacuated quartz tube under low
pressure 10-2 mbar and temperature 1100 oC about 24 hr. Single crystal has been
growth from this compound using slowly cooled average between (1-2) C/hr , also
thin films have been prepared using thermal evaporation technique and vacuum 10-6
mbar at room temperature .The structural properties have been studied for the powder
of compound of CuAl0.4Ti0.6Se2u using X-ray diffraction (XRD) . The structure of the
compound showed chalcopyrite structure with unite cell of right tetragonal and
dimensions of a=11.1776 Ao ,c=5.5888 Ao .The structure of thin films showed

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Publication Date
Fri Oct 01 2010
Journal Name
Iraqi Journal Of Physics
Indexing of Laue Back Reflection for Quartz Crystal and Singularity Evaluation of Zn Metal Thin Film
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Laue back reflection patterns for quartz crystal are indexed by using Orient Express- program to simulate orientation of single crystals from assignment of principle zones. An oriented quartz single crystal was used as a substrate to deposit Zn metal by controlled thermal evaporation to achieve single crystal films of Zn that are subsequently evaluated by x-ray powder diffraction.

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Publication Date
Sun Feb 03 2019
Journal Name
Iraqi Journal Of Physics
Synthesis and optical properties of CdS quantum dots via paraffin liquid and oleic acid
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In this study, an easy, low-cost, green, and environmentally
friendlier reagents have been used to prepare CdS QDs, in chemical
reaction method by mixed different ratio of CdO and sulfur in
paraffin liquid as solvent and oleic acid as the reacting media in
different concentration to get the optimum condition of the reaction
to formation CdS QDs. The results give an indication that the
behavior is at small concentration of 4ml of the oleic acid is best
concentration which give CdS QDs of small about to 9.23 nm with
nano fiber configuration.

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