The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO₂) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators.

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO2) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators. To mo

Abstract:

There is a close relationship between rigidity and distort structure of production and productivity and inflation rates. The effects of this relationship are distorted the contribution rate of the productive sectors and the disproportionate of exchange rate in foreign trade.

raising the general level of prices is one of the way that have been used by previous governments (inflationary financing or deficit financing) in order to speed up the process of capital formation, depending on the availability of economic resources idle.

The fabricating inflation for development does not represent a true understanding of the nature of the

Abstract : A research was conducted to study the process parameters affecting hexavalent chromium Cr (VI) (carcinogenic compound) the removal percentage from the electrical industries company waste water that contain 88 mg/l of Cr (VI) concentration by adsorption onto tea wastes. Synthetic water with 88 mg/l Cr (VI) concentration was used. Several operation parameters affecting Cr (VI) removal efficiency were investigated, such as pH, initial Cr (VI) concentration, stirring time and tea wastes dose. The experimental results reveal that maximum Cr (VI) removal reached up to 94.26% at pH of 2, stirring time of 180 minute, tea wastes do

Ginger (Zingiber officinale Rosc.) is a traditional plant that is widely used as a spice or folk medicine. Lambda-cyhalothrin (LCT) is a synthetic pyrethroid that is widely used to control insecticide. The present study aimed to evaluate the potential protective effect of ginger ethanolic extract (GEE) on liver toxicity experimentally induced by LCT in albino rats. The experiment involved thirty adult male rats (‎Rattus norvegicus)‎, randomly ‎allocated to ‎one of three groups (n=10/group: control group, administered distilled water orally for 12 weeks‎; ‎LCT-treated group, received 5.43 mg/kg BW ‎(1/15 LD50‎ dose calculated in this study as 81.5 mg/kg BW) orally, for 12 weeks;‎ LCT-‎GEE-treated group, received t

In this paper, we apply the notion of a bipolar fuzzy n-fold KU-ideal of KU- algebras. We introduce the concept of a bipolar fuzzy n-fold KU-ideal and investigate several properties. Also, we give relations between a bipolar fuzzy n- fold KU-ideal and n-fold KU-ideal. The image and the pre-image of bipolar fuzzy n-fold KU-ideals in KU-algebras are defined and how the image and the pre- image of bipolar fuzzy n-fold KU-ideals in KU-algebras become bipolar fuzzy n- fold KU-ideals are studied. Moreover, the product of bipolar fuzzy n-fold KU- ideals in Cartesian product KU-algebras is given.

In this study, investigations of structural properties of n-type porous silicon prepared by laser assisted-electrochemical etching were demonstrated. The Photo- electrochemical Etching technique, (PEC) was used to produce porous silicon for n-type with orientation of (111). X-ray diffraction studies showed distinct variations between the fresh silicon surface and the synthesized porous silicon surfaces. Atomic force microscopy (AFM) analysis was used to study the morphology of porous silicon layer. AFM results showed that root mean square (RMS) of roughness and the grain size of porous silicon decreased as etching current density increased. The chemical bonding and structure were investigated by using fourier transformation infrared spec