Abstract

The environmental conditions are important factors, because they affect both the efficiency of a photovoltaic module and the energy load. This research was carried out experimentally and modeling was done in MATLAB –Simulink by monitoring the variation in power output of the system with environmental conditions such as solar radiation, ambient temperature, wind speed, and humidity of Baghdad city. From the results, the ambient temperatures are inversely proportional to humidity and the output power performance of the system, while the wind speed is directly proportional with the output power performance of the system.  

Keywords:

Zerumbone (ZER), a natural compound has been extracted from Zingiber zerumbet with known pharmacological activities. The aim was to determine the anti-human Burkitt’s lymphoma (Raji) cell effect of ZER. The 3-(4,5-dimethylthiazol-2-yl)-2,5,-diphenyltetrazolium bromide (MTT) assay was used to determine cytotoxic effect while the Annexin-V-fluorescein isothiocyanate/propidium iodide-PI flow cytometric assays was used to determine apoptotic effect of ZER on the human Burkitt’s lymphoma (Raji) cell (ATCC CCL-86) cell line. The expressions of Bax, Bcl-2, and c-Myc genes were determined via real-time PCR. ZER suppressed the proliferation of Raji cells with a 48 h IC50 value of 5.1 μg/mL. Treated Raji cells also underwen

This study used a continuous photo-Fenton-like method to remediate textile effluent containing azo dyes especially direct blue 15 dye (DB15). A Eucalyptus leaf extract was used to create iron/copper nanoparticles supported on bentonite for use as catalysts (E@B-Fe/Cu-NPs). Two fixed-bed configurations were studied and compared. The first one involved mixing granular bentonite with E@B-Fe/Cu-NPs (GB- E@B-Fe/Cu-NPs), and the other examined the mixing of E@B-Fe/Cu-NPs with glass beads (glass beads-E@B-Fe/Cu-NPs) and filled to the fixed-bed column. Scanning electron microscopy (SEM), zeta potential, and atomic forces spectroscopy (AFM) techniques were used to characterize the obtained particles (NPs). The effect of flow rate and DB15 concent

THE EFFECT OF SPREACL of KNOWLEDGE ON ETHICS

3\URO\VLVKDVEHHQFRQVLGHUHGDPHWKRGIRUUHFRYHULQJWKHSRZHUIURPFRPELQHGPLFURDOJDELRPDVVKHUH QH[WH[HFXWLQJKHDWSUREHRIRULQYROYLQJVRXQGZDYHVZLWKDIUHTXHQF\DERYHWKHXSSHUOLPLWRIKXPDQKHDULQJDVD SUHWUHDWPHQWWRLQFUHDVHWKHELRFUXGH\LHOG3\URO\VLVRIPL[HGPLFURDOJDHZDVFDUULHGRXWLQDEDWFKUHDFWRUPDGH XS RI VWHHO DW DWHPSHUDWXUH UDQJH &R QLWURJHQ JDV ZDV XVHG DV VZHHS JDV IRU PDLQWDLQLQJ R[\JHQ IUHH DWPRVSKHUHLQWKHS\URO\VLVWKHUHVXOWVVKRZWKDWWKHXVLQJXOWUDVRQLFSUREHIRUERWKIUHTXHQF\ .+]LQFUHDVH WKHELRFUXGH\LHOGIURPWRDQGUHVSHFWLYHO\DW&R WKHWKHUPDOGHJUDGDWLRQWHPSHUDWXUHRI PLFURDOJDHDUH VWXGLHG XVLQJ7*$DOVRWKH UHVXOWV VKRZWKDWWKHDVKFRQWHQWDIWHUDSSO\LQJ XOWUDVRQLF VRXQGDVD SUHWUHDWPHQWIRUERWKIUHTXHQF\ .+]ZHUHUHGXFHGIURPWR

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO₂) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators.

The choice of gate dielectric materials is fundamental for organic field effect transistors (OFET), integrated circuits, and several electronic applications. The operation of the OFET depends on two essential parameters: the insulation between the semiconductor layer and the gate electrode and the capacitance of the insulator. In this work, the electrical behavior of a pentacene-based OFET with a top contact / bottom gate was studied. Organic polyvinyl alcohol (PVA) and inorganic hafnium oxide (HfO2) were chosen as gate dielectric materials to lower the operation voltage to achieve the next generation of electronic applications. In this study, the performance of the OFET was studied using monolayer and bilayer gate insulators. To mo

The influence of different thickness (500, 1000, 1500, and 2000) nm on the electrical conductivity and Hall effect measurements have been investigated on the films of copper indium gallium selenide CuIn1-xGaxSe2 (CIGS) for x= 0.6.The films were produced using thermal evaporation technique on glass substrates at R.T from (CIGS) alloy. The electrical conductivity (σ), the activation energies (Ea1, Ea2), Hall mobility and the carrier concentration are investigated and calculated as function of thickness. All films contain two types of transport mechanisms of free carriers, and increases films thickness was fond to increase the electrical cAnductivity whereas the activation energy (Ea) would vary with films thickness. Hall Effect analysis resu