Thin films of cadmium sulphoselenide (CdSSe) have been prepared by a thermal evaporation method on glass substrate, and with pressure of 4x10-5 mbar. The optical constants such as (refractive index n, dielectric constant ?i,r and Extinction coefficient ?) of the deposition films were obtained from the analysis of the experimental recorded transmittance spectral data. The optical band gap of (CdSSe) films is calculate from (?h?)2 vs. photon energy curve. CdSSe films have a direct energy gap, and the values of the energy gap were found to increase when increasing annealing temperature. The band gap of the films varies from 1.68 – 2.39 eV.

the use of diffrent concectration of Na and Mg ions were shown to causes in increase in the bindings at oncentration

   The most likely fusion reaction to be practical is Deuterium and Helium-3 (𝐷−𝐻𝑒
 3 ), which is highly desirable because both Helium -3 and Deuterium are stable and the reaction produces a 14 𝑀𝑒𝑉 proton instead of a neutron and the proton can be shielded by magnetic fields. The strongly dependency of the basically hot plasma parameters such as reactivity, reaction rate, and energy for the emitted protons, upon the total cross section, make the problems for choosing the desirable formula for the cross section, the main goal for our present work.

In this work, p-n junctions were fabricated from highly-pure nanostructured NiO and TiO2 thin films deposited on glass substrates by dc reactive magnetron sputtering technique. The structural characterization showed that the prepared multilayer NiO/TiO2 thin film structures were highly pure as no traces for other compounds than NiO and TiO2 were observed. It was found that the absorption of NiO-on-TiO2 structure is higher than that of the TiO2-on-NiO. Also, the NiO/TiO2 heterojunctions exhibit typical electrical characteristics, higher ideality factor and better spectral responsivity when compared to those fabricated from the same materials by the same technique and with larger particle size and lower structural purity.