Purepolyaniline and doped with hydrochloric acid was prepared in different molarities at room temperature. The a.c electrical properties were stadied.AC conductivityσac (ω), is found to vary as ωS in the frequency range (100Hz-10MH), S< 1and decreases indicating a dominate hopping process. Thedielectric constant ε1and dielectric loss ε2 have been determined for bulk polyaniline. ε1 decrease with the increase frequency. Electrical conductivity measurements increase with the increases both of the amount of HCl and the dose of radiation. The dielectric investigations show decrease with dose radiation.

     In this work, the electrical properties and optimum conditions of the plasma sputtering system have been studied. The electrical properties such as Paschen's curve, current-voltage, current pressure relations, the strength of magnetic field as a function of inter-electrode distance, the influence of gas working pressure and argon-oxygen ratio on the electrical characterization were studied to determine the basic optimum condition of the system operation. the discharge current as a function of discharge voltage showed high discharge current at 2.5 cm.  These parameters represent the basic conditions to operate any plasma sputtering system which are the right behavior to build up and design the discharge an el

  This researchs the preparation of particulate polymer composites from Alkyd resin and Iraqi Burn Kaolin which were added as (20%,30%,40%,50%)and comparing  with the  polymer.  It studied Thermal conductivity and Dielectric strength for both of  the Alkyd resin and  the Composite Material.        The result showed an  increase in Dielectric strength after adding the Iraqi Burn Kaolin , also the Thermal conductivity was  increased by adding the Iraqi Burn Kaolin .

In this work, nanostructure porous silicon surface was prepared using electrochemical etching method under different current densities. I have studied the surface morphology and photoluminescence (PL) of three samples prepared at current densities 20, 30 and 40 mA/cm2 at fixed etching time 10 min. The atomic force microscopy (AFM) images of porous silicon showed that the nanocrystalline silicon pillars and voids over the entire surface has irregular and randomly distributed. Photoluminescence study showed that the emission peaks centered at approximately (600 – 612nm) corresponding energies (2.06 – 2.02eV).
While current-voltage characteristics shows, as the current density increase the current flow in the forward bias is decreasi

     Zinc oxide films (ZnO) are prepared by an electrolysis technique and without vacuum and then annealed atvarious temperatures (300,400,500)^OC for an hour. The structural analysis performed by X-Ray diffraction (XRD) shows,dominant orientation of this films is plane (101), has a hexagonal structure and  polycrystalline pattern and it was is found that the crystal size increases(24,29) nm at annealing temperatures (300, 400)° C, but the crystal size decreases to (20 nm) at annealing temperature (500 ° C). As the results of a surface nature study of these films showed by examining the atomic force microscope (AFM), the grain  size increases from (60.79 to 88.11) nm, and the surface roughnes