The CIGS/CdS p-n junction thin films were fabricated and deposited at room temperature with rate of deposition 5, and 6 nm secG1 , on ITO glass substrates with 1mm thickness by thermal evaporation technique at high vacuum pressure 2×10G5 mbar, with area of 1 cm2 and Aluminum electrode as back contact. The thickness of absorber layer (CIGS) was 1 µm while the thickness of the window layer CdS film was 300 nm. The X-ray Diffraction results have shown that all thin films were polycrystalline with orientation of 112 and 211 for CIGS thin films and 111 for CdS films. The direct energy gaps for CIGS and CdS thin films were 1.85 and 2.4 eV, respectively. Atomic Force Microscopy measurement proves that both films CIGS and CdS films have nanostructures. The carrier concentration, Hall mobility and the conductivity of CIGS and CdS thin films were calculated by hall effect measurement showing that p = 3.56×1010 cmG3 and n = 1.76×1014 cmG3 , respectively. The J-V characteristics for CIGS/CdS solar cells were measured when illuminated with 1000 W mG2 , the efficiency were calculated before and after annealing with temperature 100 200 and 300°C for one hour in vacuum oven. The results indicate that the efficiency decreases with increasing annealing temperature of CIGS\CdS solar cell.
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Cadmium sulfide photodetector was fabricated. The CdS nano
powder has been prepared by a chemical method and deposited as a
thin film on both silicon and porous p- type silicon substrates by spin
coating technique. Structural, morphological, optical and electrical
properties of the prepared CdS nano powder are studied. The X-ray
analysis shows that the obtained powder is CdS with predominantly
hexagonal phase. The Hall measurements show that the nano powder
is n-type with carrier concentration of about (-5.4×1010) cm-3. The
response time of fabricated detector was measured by illuminating
the sample with visible radiation and its value was 5.25 msec. The
specific detectivity of the fabricated det
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Optical losses represent one of the primary obstacles to increasing the efficiency of silicon solar cells. The recommended solution to minimize optical losses is the use of plasmonic metal nanoparticles; however, they act as recombination centers within the solar cell construction, leading to a decrease in performance. The goal of this article is to introduce cobalt/graphene nanoparticles into the solar cell to minimize the optical losses. An ultra-thin film silicon PIN solar cell of dimensions (400 ×400 ×900) nm3 with ring metal contact shape was designed and numerically investigated using COMSOL Multiphysics software version 6.2 by the finite element method (FEM). Core/shell cobalt-graphene (Co/Gr) nanoparticles are periodically int
... Show MoreSnS has been widely used in photoelectric devices due to its special band gap of 1.2-1.5 eV. Here, we reported on the fabrication of SnS nanosheets and the effect of synthesis condition together with heat treatment on its physical properties. The obtained band gap of the SnS nanosheets is in the rage of 1.37-1.41 eV. It was found that the photo-current density of a thin film comprised of SnS nanosheets could be enhanced significantly by annealing treatment. The maximum photo-current density of the stack structure of FTO/SnS/CdS/Pt was high as 389.5 mu A cm(-2), rendering its potential application in high efficiency solar hydrogen production.
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Three different distribution modules of silicon solar cells in a panel are used in this study . Each module consists of five identical circular silicon solar cells of radius (5cm) and then the total panel areas are identical. The five solar cells are arranged in the panel in different shapes: circular, triangular and rectangular .The efficiency for these three panel distribution are measured indoor and outdoor. The results show that the efficiency is a function of the cells distribution.
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