The effects of short-range correlation on elastic Coulomb (charge) form factors, charge density distributions as well as root mean square charge radii of various  nuclei (for instance, ^{46, 48, 50}Ti, ^{52, 54}Cr, ^{56, 58}Fe, and ^{72, 74, 76}Ge nuclei) are examined. The one- and two body terms of the cluster expansion together with the single-particle harmonic oscillator wave functions are utilized. For the purpose of embedding these effects into the formulae of charge density  and form factor  we employ the correlation function of Jastrow-type. These formulae depend upon the short-range correlation parameter  (which instigates from the Jastr

 In this research, analytical study for simulating a Fabry-Perot bistable etalon (F-P cavity) filled with a dispersive optimized nonlinear optical material (Kerr type) such as semiconductors Indium Antimonide (InSb). An optimization procedure using reflective (~85%) InSb etalon (~50µm) thick is described. For this etalon with a (50 µm) spot diameter beam, the minimum switching power is (~0.078 mW) and switching time is (~150 ns), leading to a switching energy of (~11.77 pJ) for this device. Also, the main role played by the temperature to change the etalon characteristic from nonlinear to linear dynamics.

A nanocrystalline CdS thin film with 100 nm thickness has been prepared by thermal evaporation technique on glass substrate with substrate temperature of about 423 K. The films annealed under vacuum at different annealing temperature 473, 523 and 573 K. The X-ray diffraction studies show that CdS thin films have a hexagonal polycrystalline structure with preferred orientation at (002) direction. Our investigation showed the grain size of thin films increased from 9.1 to 18.9 nm with increasing the annealing temperature. The optical measurements showed that CdS thin films have direct energy band gap, which decreases with increasing the annealing temperature within the range 3.2- 2.85 eV. The absorbance edge is blue shifted. The absorption

CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.

TEOS aerogel a is the most commonly used. a Aerogel has attracted increasing attention from both academic and industries due to its extraordinary performance and potentials. We have systematically studied the relationship between the densification temperature of the synthesis environment of silica aerogels on their resulting morphological, optical and thermal properties. SEM and BET measurements were employed as structural probes to ascertain the structural differences. Lee's disc apparatus was used for determining the thermal conductivity coefficient. There is a systematic correlation between the annealing temperature and the aerogel surface area, porosity, as well as pore size. The implemented autoclave was able to produce aerogel mono

In humans, Pseudomonas aeruginosa is the second most frequent gram negative nosocomial pathogen in hospitals and has the highest case-fatality rate of all hospital-acquired bacteremia because of the hardy resistance of these bacteria to mechanical cleansing as well as to disinfectant, and many antibiotics. The susceptibility of bacteria against the antibiotics is modulated by several local factors such as temperature which modified drug efficacy, so this study was carried out to evaluate the effect of different temperature (20,42,45)Ċon the susceptibility of Pseudomonas aeruginosa to the minimum inhibitory concentrations (MIC) of the antimicrobial agents before and after irradiation. The samples collected from 150 persons suffering from