The electrical properties of pure NiO and NiO:Au Films which are
deposited on glass substrate with various dopant concentrations
(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Co
annealing temperature will be presented. The results of the hall effect
showed that all the films were p-type. The Hall mobility decreases
while both carrier concentration and conductivity increases with the
increasing of annealing temperatures and doping percentage, Thus,
indicating the behavior of semiconductor, and also the D.C
conductivity from which the activation energy decrease with the
doping concentration increase and transport mechanism of the charge
carriers can be estimated.

FG Mohammed, HM Al-Dabbas, Science International, 2018 - Cited by 2

This research aimed to predict the permanent deformation (rutting) in conventional and rubberized asphalt mixes under repeated load conditions using the Finite Element Method (FEM). A three-dimensional (3D) model was developed to simulate the Wheel Track Testing (WTT) loading. The study was conducted using the Abaqus/Standard finite element software. The pavement slab was simulated using a nonlinear creep (time-hardening) model at 40°C. The responses of the viscoplastic model under the influence of the trapezoidal amplitude of moving wheel loadings were determined for different speeds and numbers of cycles. The results indicated that a wheel speed increase from 0.5Km/h to 1.0Km/h decreased the rut depth by about 22% and 24% in conv

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Laser is a powerful device that has a wide range of applications in fields ranging from materials science and manufacturing to medicine and fibre optic communications. One remarkable

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