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Silver selenide telluride Semiconducting (Ag2Se0.8Te0.2) thin films were by thermal
evaporation at RT with thickness350 nm at annealing temperatures (300, 348, 398, and
448) °K for 1 hour on glass substrates .using X-ray diffraction, the structural
characteristics were calculated as a function of annealing temperatures with no preferential
orientation along any plane. Atomic force microscopy (AFM) and X-ray techniques are
used to analyze the Ag2SeTe thin films' physical makeup and properties. AFM techniques
were used to analyze the surface morphology of the Ag2SeTe films, and the results showed
that the values for average diameter, surface roughness, and grain size mutation increased
with annealing temperature (116.36-171.02) nm The transm
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