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jih-995
Prepared Electrical Resistivity Been Pure B TiO a 3 Impurity
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   3 BaTiO was prepared by mixing the components of 3 BaCO and 2 TiO by ratio [1:1] ØŒ This paper is devoted to study the effect of radition on the electrical properties of 3 BaTiO . Some of prepared samples were exposed to fast neutrons   SMeV and   MeV14 . In addition ØŒ Some samples were exposed to gamma – ray with dosage   Rad81.5 10 ï‚´ . The results showed that the exposition of some samples to fast neutrons    SMeV and   MeV14 lead to increase the electrical resistivity with the study of the effect of the addition of impurity on electrical resistivity . The addition of two compounds   2 3Yb O and   2 3Sm O lead to decrease of electrical resistivity at a concentration of   0.2 % mol for both compounds ØŒ while the increase of concentration at   0.5 % mol lead to increase electrical resistivity again .    

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Publication Date
Sat Jan 05 2019
Journal Name
Iraqi Journal Of Physics
Synthesis of Au –Ag– Cu trimetallic alloy nanoparticles prepared by electrical exploding wire technique in distilled water
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Formation of Au–Ag–Cu ternary alloy nanoparticles (NPs) is of particular interest because this trimetallic system have miscible (Au–Ag and Au–Cu) and immiscible (Ag– Cu) system. So there is a possibility of phase segregation in this ternary system. At this challenge it was present attempts synthetic technique to generate such trimetallic alloy nanoparticles by exploding wire technique. The importance of preparing nanoparticles alloys in distilled water and in this technique makes the possibility of obtaining nanoparticles free of any additional chemical substance and makes it possible to be used in the treatment of cancer or diseases resulting from bacterial or virus with least toxic. In this work, three metals alloys Au-Ag-Cu

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Publication Date
Sun Dec 03 2017
Journal Name
Baghdad Science Journal
Effect of Diffusion Temperature on the some Electrical Properties of CdS:In Thin Films Prepared by Vacuum Evaporation
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CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.

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Publication Date
Tue Jun 01 2021
Journal Name
Iraqi Journal Of Physics
Effect of Transition Metal Dopant on the Electrical Properties of ZnO-TiO2 Films Prepared by PLD Technique
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In this article, the influence of group nano transition metal oxides such as {(MnO2), (Fe2O3) and (CuO)} thin films on the (ZnO-TiO2) electric characteristics have been analyzed. The prepared films deposited on glass substrate laser Nd-YAG with wavelength (ℷ =1064 nm) ,energy of (800mJ) and number of shots (400). The density of the film was found to be (200 nm) at room temperature (RT) and annealing temperature (573K).Using DC Conductivity and Hall Effect, we obtained the electrical properties of the films. The DC Conductivity shows that that the activation energies decrease while the σRT at annealing temperature with different elements increases the formation of mixed oxides. The Hall effect, the elec

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Publication Date
Sun Nov 25 2018
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Synthesis and study the Structural and electrical and mechanical properties of High Temperature Superconductor Tl0.5Pb0.5Ba2Can-1Cun-xNixO2n+3-δ Substituted with nickel oxide for n=3
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   on this research is to study the effect of nickel oxide substitution on the pure phases superconductor Tl0.5Pb0.5Ba2Can-1Cun-xNixO2n+3-δ (n=3) where x=(0,0.2,0.4,0.6,0.8.and 1.0). The specimens in this work were prepared with used  procedure of solid state reaction with sintering temperature 8500C for 24 h .we used technical (4-prob)to calculated and the critical temperature Tc . The results of the XRD diffraction analysis showed that the structure for pure and doped phases was tetragonal with phases high-Tc phase (1223),(1212) and low-Tc phase (1202)  and add

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Publication Date
Fri Dec 29 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
B(E2), B(Ml) and 8(E2/ Ml) of Pt (A=198 & (Z=78) Isotope Using IBM-1
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Interacting boson model version one has been used in the present

theoretical calculations. The energy levels & their transitions for dynamical  symmetry  0(6),  SU(3),  U(5),  ground-state  band,  Beta­ band, Gamma  band, B(E2), Ot, B(Ml), ,u,gt and  6(£2/Ml)have been  calculated  to  deduce  the  limit  of  Pt-198,  Z=78.  The  present results  confirmed  the  nuclear  behavior  of  this  isotope  lay  in  the

transitional region 0(6), SU(3) U(5). The calculations of 021 + & 022+

showed that the shape of this isotope is oblate according to Q21+  and pr

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Publication Date
Mon Mar 08 2021
Journal Name
Baghdad Science Journal
Study the influence of Annealing upon electrical properties of The prepared films ZnSe by Thermal evaporation in Vacuum
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Thin films of ZnSe arc deposited on glass substrates by thermal evaporation in vacuum with different thickness (1000, 2700, 4000) A° temperature (293-373) °K are studies the electrical properties before and after annealing. The result show decrease D.0 conductivity and increasing the activation energy Eat.

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Publication Date
Mon Oct 01 2018
Journal Name
Iraqi Journal Of Physics
Simulations of the initiation and propagation of streamers in electrical discharges inside water at 3 mm length gap
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This work is devoted to the modeling of streamer discharge, propagation in liquid dielectrics (water) gap using the bubble theory. This of the electrical discharge (streamer) propagating within a dielectric liquid subjected to a divergent electric field, using finite element method (in two dimensions). Solution of Laplace's equation governs the voltage and electric field distributions within the configuration, the electrode configuration a point (pin) - plane configuration, the plasma channels were followed, step to step. The results show that, the electrical discharge (streamer) indicates the breakdown voltage required for a 3mm atmospheric pressure dielectric liquid gap as 13 kV. Also, the electric potential and field distributions sho

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Publication Date
Fri Mar 29 2024
Journal Name
Iraqi Journal Of Science
Pure-Hollow Modules and Pure-Lifting Modules
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   Let  be a commutative ring with identity, and  be a unitary left R-module. In this paper we, introduce and study a new class of modules called pure hollow (Pr-hollow) and pure-lifting (Pr-lifting). We give a fundamental, properties of these concept.  also, we, introduce some conditions under which the quotient and direct sum of Pr-lifting modules is Pr-lifting.

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Publication Date
Sun Sep 06 2009
Journal Name
Baghdad Science Journal
A note on an –module with -pure intersection property
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Let be a ring. Given two positive integers and , an module is said to be -presented, if there is an exact sequence of -modules with is -generated. A submodule of a right -module is said to be -pure in , if for every -Presented left -module the canonical map is a monomorphism. An -module has the -pure intersection property if the intersection of any two -pure submodules is again -pure. In this paper we give some characterizations, theorems and properties of modules with the -pure intersection property.

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Publication Date
Sun Sep 06 2009
Journal Name
Baghdad Science Journal
A note on an –module with -pure intersection property
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Let be a ring. Given two positive integers and , an module is said to be -presented, if there is an exact sequence of -modules with is -generated. A submodule of a right -module is said to be -pure in , if for every -Presented left -module the canonical map is a monomorphism. An -module has the -pure intersection property if the intersection of any two -pure submodules is again -pure. In this paper we give some characterizations, theorems and properties of modules with the -pure intersection property.

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