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Study of optical constants of( PMMA)doped with ( C14H14N3O6S-)
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  The Dopping effect by methyl orange ( )on optical constants [Refractive index (n), extinction coefficient(K0),real and imaginary parts of dielectric constant(εr &εi)] of poly methyl methacrylat (PMMA)  that additive to this polymer with both percentages 2% and 4% at thickness(145)µm have been studied. This study has been done by recording the absorption and transmission spectra in the wavelength range (200-900)nm . The results  showed that all  optical parameters are increased by increasing dopping rate except the transmission was decreased.
 
 

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Publication Date
Tue Jan 08 2019
Journal Name
Iraqi Journal Of Physics
D.C electrical conductivity of prepared pure and doped polyaniline salt
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Pure Polyaniline salt, and protonation PANI by H2SO4 were synthesized by electro-chemical oxidative polymerization of aniline with acidity of H2SO4. The solution was prepared in reaction temperature equal 291 K and the acidity of aqueous solution was 1 molarities. The prepared polyaniline was characterized by FT-IR, the result indicate that the intensity is increase with increasing of applied voltage. The dc conductivity has been measured for bulk polyaniline pure and doped in the form of compressed pellet with evaporated Ohmic Al electrodes in temperature range (303-423) K. The Eav energy of the thermal rate process of the electrical conductivity was determined. The results indicate that the dc conductivity of doped samples are two or t

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Publication Date
Wed May 24 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Electrical Properties of Poly (Ethylene Oxide) polymer Doped by MnCl2
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  The electrical properties of Poly (ethylene oxide)-MnCl2 Composites were studied by using the impedance technique. The study was carried out as a function of frequency in the range from 10 Hz to 13 MHz and MnCl2 salt concentration ranged from 0% to 20% by weight. It was found that the dielectric constants and the dielectric loss of the prepared films increase with the increase of the MnCl2 concentration; The A.C. conductivity increases with the increase of the applied frequency, and the MnCl2 content in the composite membrane. Relaxation processes were observed to take place for composites which have a high salt concentration. The observed relaxation and polarization effects of the composite are mainly attributed to the dielectric

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Publication Date
Mon Jun 04 2018
Journal Name
Baghdad Science Journal
Fabricated of Cu Doped ZnO Nanoparticles for Solar Cell Application
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Copper with different concentrations doped with zinc oxide nanoparticles were prepared from a mixture of zinc acetate and copper acetate with sodium hydroxide in aqueous solution. The structure of the prepared samples was done by X-ray diffraction, atomic force microscopy (AFM) and UV-VIS absorption spectrophotometer. Debye-Scherer formula was used to calculate the size of the prepared samples. The band gap of the nanoparticle ZnO was determined by using UV-VIS optical spectroscopy.

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Publication Date
Sun Feb 03 2019
Journal Name
Iraqi Journal Of Physics
Synthesis and study the optical properties of Ge20 Bix Se80-x thin films
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Publication Date
Wed Apr 12 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
the Optical Properties of Electrostatic Design and Study Mirror By using Bimurzaev Technique
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In this research a computational simulation  has been carried out on the design and properties of the electrostatic mirror and a mathematical expression has been suggested  to represent the axial potential of an electrostatic mirror. The electron beam path using the Bimurzaev  technique had been investigated as mirror trajectory with the aid of Runge – Kutta  method. The spherical and chromatic aberration coefficients of mirror has computed and normalized in terms of the focal length. The choice of the mirror depends on the operational requirements. The Electrode shape of mirror two electrodes has been determined by using package SIMION computer program. Computations have shown that the suggested potentials giv

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Publication Date
Mon May 22 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Study of the Optical Properties for ZnS Thin Film Irradiated by CO2 Laser
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In this study ZnS thin film was prepared by using thermal evaporation vacuum technique under the pressure (10-6) Torr on glass substrate at room temperature and annealing at 523 K Samples were irradiated to CO2 laser of power (1 watt) and wave length (10.6) μm at distance 10 cm from the source during (5 sec). The absorbance spectra was recorded by using UV-visible spectrophotometer and used to calculated some of optical properties investigated including their transmittance, reflectance spectra, energy gap, and extinction coefficient. From the result of thin films samples at room temperature and at 523 K, we conclude that the irradiation by laser causes a decrease in the transmittance and increasing in reflection and extinction coeffic

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Publication Date
Fri May 11 2018
Journal Name
Nanotechnology
Doped bottom-contact organic field-effect transistors
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Publication Date
Wed Nov 16 2016
Journal Name
Acs Applied Materials & Interfaces
Minority Currents in n-Doped Organic Transistors
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Publication Date
Thu Dec 01 2016
Journal Name
Organic Electronics
Charge trapping in doped organic Zener diodes
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Publication Date
Sat Mar 18 2017
Journal Name
Ibn Al-haitham Journal For Pure And Applied Sciences
Studying the Effect of Doping With Aluminum on The Optical Properties Of CdSe Thin Films
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CdSe thin films were deposited on glass sudstrate by thermal evaporation method with thickness of (300±25%) nm with deposition rate (2±0.1) nm/s and at substrate temperature at (R.T.). XRD analysis reveals that the structure of pure thin films are Hexagonal and polycrystalline with preferential orientation (002). In this research ,we study the effect of doping with (1,2,3)% Aluminum on optical energy gap of (CdSe) thin film . The absorption was studied by using (UV - Visible 1800 spectra photometer ) within the wavelength (300-1100) nm absorption coefficient was calculated as a function of incident photon energy for identify type of electronic transitions it is found that the type of transition is direct , and we calculated the opt

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