Extended calculations for sputtering yield through bombed Iron – target by ( H,D ,T ,He ) ions plasma are accomplished .The calculations include changing the input parameters : the energy of ( H,D ,T ,He ) ions plasma, the hit target angle of Iron, change atomic mass of incident ion. The program TRIM is used to accomplish these calculations. The results show that sputtering yield is directly dependent on these parameters. It can change the incident angle of ( H,D ,T ,He ) ions and energy lead to a significant change in sputtering yield on the other hand. The sputtering yields are highly affected by changing of incident ion mass at fixed other target parameters. It can be shown from calculation that whenever increased incident ion mass increase sputtering yield, increases with incident ions energy and then begins to decline, sputtering will not occur , at incident ion energies below the threshold energy . In this study we found that the sputtering yield depends on incidence angle, incident ions energy and atomic mass of target.
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A recently reported Nile red (NR) dye conjugated with benzothiadiazole species paves the way for the development of novel organic-based sensitizers used in solar cells whose structures are susceptible to modifications. Thus, six novel NR structures were derived from two previously developed structures in laboratories. In this study, density functional theory (DFT) calculations and time-dependent DFT (TD-DFT) were used to determine the optoelectronic properties of the NR-derived moieties such as absorption spectra. Various linkers were investigated in an attempt to understand the impact of π-linkers on the optoelectronic properties. According to the findings, the presence of furan species led to the planarity of the molecule and a reduction
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Overall enthalpy and entropy of complex formation were calculated from stability constant measurements at different tempreture also experimental results
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This study focuses on synthesizing Niobium pentoxide (Nb2O5) thin films on silicon wafers and quartz substrates using DC reactive magnetron sputtering for NO2 gas sensors. The films undergo annealing in ambient air at 800 °C for 1 hr. Various characterization techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS), Hall effect measurements, and sensitivity measurements, are employed to evaluate the structural, morphological, electrical, and sensing properties of the Nb2O5 thin films. XRD analysis confirms the polycrystalline nature and hexagonal crystal structure of Nb2O5. The optical band gap values of the Nb2O5 thin films demonstrate a decrease from 4.74 to 3.73 eV
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