In this research, the structural and optical properties were studied for Bi2O3 and Bi2O3: Al thin films with different doping ratios ( 1, 2, 3 ) % , which were prepared by thermal evaporation technique under vacuum , with thickness ( 450 ± 20 ) nm deposited on glass substrates at room temperature ( 300 ) K , Structural measurements by ( XRD) techniques demonstrated that all samples prepared have polycrystalline structure with tetragonal structure and a preferred orientation [ 201 ] the optical measurement shows that all films have a direct energy gap , and in general decrease with the increase of doping ratio except ratio ( 3% Al ) . The optical constant such as absorption coefficient , extinction coefficient , refractive index real and imaginary parts of the dielectric constant and optical conductivity were calculated before and after doping with the range of wave lengths ( 300 - 1100 ) nm .
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The aim of the present research is concerned with study the effect of UV radiation on the optical properties at wavelengths 254, 365 nm of pure PC and anthracene doping PC films prepared using the cast method for different doping ratio 10-60 mL. Films of pure PC and anthracene doping PC were aged under UV radiation for periods of up to 360 h. It found that the effect of UV radiation at wavelength 254 nm on the optical properties is great than the effect of UV radiation at wavelength 365 nm. Also, it found that the optical energy gap of pure PC and anthracene doping PC films is stable against radiation.
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In this research study the effect of irradiation by (CW) CO2 laser on some optical properties of (Cds) doping by Ni thin films of (1)µm thickness has been prepared by heat evaporation method. (X-Ray) diffraction technique showed the prepared films before and after irradiation are ploy crystalline hexagonal structure, optical properties were include recording of absorbance spectra for prepared films in the range of (400-1000) nm wave lengths, the absorption coefficient and the energy gap were calculated before and after irradiation, finally the irradiation affected (CdS) thin films by changing its color from the Transparent yellow to dark rough yellow and decrease the value absorption coefficient also increase the value of energy gap.
Study the effect of doping V2O5 on polymers poly vinyl alcohol ( PVA), poly vinyl pyrrolidone (PVP) on the optical and structural properties for film prepared by using Casting method at thickness( 300±20)nm ,All the materials dissolved in distilled water by magnetic mixer for one hour .The optical parameters measured by using UV-VIS spectrometer ,and the structural parameters measured by X-ray diffraction .when measured the energy gap found that the value was decreases from 4.6 eV to 2.98 eV with doping .The refractive index ,extinction coefficient ,absorption coefficient ,real and imaginary dielectric constants of (PVA/PVP) are increasing with doping by V2O5 and wit
... Show MoreNiO0.99Cu0.01 films have been deposited using thermal evaporation
technique on glass substrates under vacuum 10-5mbar. The thickness
of the films was 220nm. The as -deposited films were annealed to
different annealing temperatures (373, 423, and 473) K under
vacuum 10-3mbar for 1 h. The structural properties of the films were
examined using X-ray diffraction (XRD). The results show that no
clear diffraction peaks in the range 2θ= (20-50)o for the as deposited
films. On the other hand, by annealing the films to 423K in vacuum
for 1 h, a weak reflection peak attributable to cubic NiO was
detected. On heating the films at 473K for 1 h, this peak was
observed to be stronger. The most intense peak is at 2θ = 37
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Thin films of tin disulphide SnS2 with different thicknesses (2500,4000,5000)A0 have been prepared by chemical spray pyrolises technique on substrate of glass with temperature (603)K . The effect of thickness on the optical properties of SnS2 has been studied.the optical study that includes the absorptance and transmittance spectra in the wavelength range (300900)nm demonstrated that the value of absorption coefficient (α) ) was greater than (104 cm-1) the electronic transitions at the fundamental absorption edge were of the indirect kind whether allowed and forbidden . Absorption edge shift slightly towards higher wave length.The value of energy gaps (Eg) for all the films prepared are decreased with inc
... Show MoreThe fabricated Photodetector n-CdO /-Si factory thin films Altboukaraharara spatial silicon multi- crystallization of the type (n-Type) the deposition of a thin film of cadmium and at room temperature (300K) and thickness (300 ± 20nm) and the time of deposition (1.25sec) was antioxidant thin films cadmium (Cd) record temperature (673k) for one hour to the presence of air and calculated energy gap optical transitions electronic direct ( allowed ) a function of the absorption coefficient and permeability and reflectivity by recording the spectrum absorbance and permeability of the membrane record within the wavelengths (300 1100nm). was used several the bias ranged between 1-5 Volts. The results showed that this
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