Several new copolymer containing imides were prepared from the corresponding
copolymers containing amic acids using dehydrating agent such as acetyl chloride –
tri ethyl amine mixture. The obtained yields were different ranging from 65% to
80%. Readily polymerized unsaturated copolymers containing imides free radically
using azobisisobuty ronitrile (AIBN) as initiator to yield high molecular weight
copolymers. All the prepared resins were characterized IR. NMR. Elemental
analysis. TG and DTG Techniques.

in this paper copper oxide (cuO thin films were prepared by the method of vacum thermal evaporation a pressure.

Statin drugs act by inhibiting the enzyme HMG-CoA reductase which is responsible for manufacture of cholesterol and the biosynthesis essential energy production Co-factor (Coenzyme Q10). The aim from this research includes study the effect of statin drugs (Simvastatin and Atorvastatin) on the Coenzyme Q10 using differential pulse polarographic technique at a dropping mercury electrode (DME) and in a mixture of [4:1] methanol-phosphate buffer of pH7.0 as supporting an electrolyte. Prior to this, the behaviors of Simvastatin, Atorvastatin and Coenzyme Q10 were studied separately in their solvents. The half-wave potential (E1/2) of Co Q10 were -0.31volt and -1.37Volt, -1.33 Volt for simvastatin and atorvastatin respectively. A mixture of Co

This paper addresses the substrate temperature effect on the structure, morphological and optical properties of copper oxide (CuO) thin films deposited by pulsed laser deposition (PLD) method on sapphire substrate of 150nm thickness. The films deposited at two different substrate temperatures (473 and 673)K. The atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR) and UV-VIS transmission spectroscopy were employed to characterize the size, morphology, crystalline structure and optical properties of the prepared thin films. The surface characteristics were studied by using AFM. It is found that as the substrate temperature increases, the grain size increased but the surface roughness decreased.  The FTIR spec

Silver selenide telluride Semiconducting (Ag2Se0.8Te0.2) thin films were by thermal evaporation at RT with thickness350 nm at annealing temperatures (300, 348, 398, and 448) °K for 1 hour on glass substrates .using X-ray diffraction, the structural characteristics were calculated as a function of annealing temperatures with no preferential orientation along any plane. Atomic force microscopy (AFM) and X-ray techniques are used to analyze the Ag2SeTe thin films' physical makeup and properties. AFM techniques were used to analyze the surface morphology of the Ag2SeTe films, and the results showed that the values for average diameter, surface roughness, and grain size mutation increased with annealing temperature (116.36-171.02) nm The transm

the bank sect for any country  is very important  because  its represent a major  nerve   to feed a verity economic and finance activities .development any state measure by development  banking  sets and its represent  important  factor to investors attract . and because  important  of this subject ,teen accounting rule is a specialized for it .its related by  Disclosures in the Financial Statements Of Banks and The Similar Institutions, its accredit  by auditing and accounting standard  consul in republic of Iraq.in date 10/28/1998.                      &

In this paper, Pentacene based-organic field effect transistors (OFETs) by using different layers (monolayer, bilayer and trilayer) for three different gate insulators (ZrO2, PVA and CYEPL) were studied its current–voltage (I-V) characteristics by using the gradual-channel approximation model. The device exhibits a typical output curve of a field-effect transistor (FET). Source-drain voltage (Vds) was also investigated to study the effects of gate dielectric on electrical performance for OFET. The effect of capacitancesemiconductor in performance OFETs was considered. The values of current and transconductance which calculated using MATLAB simulation. It exhibited a value of current increase with increasing source-drain voltage.