The ability of the human brain to communicate with its environment has become a reality through the use of a Brain-Computer Interface (BCI)-based mechanism. Electroencephalography (EEG) has gained popularity as a non-invasive way of brain connection. Traditionally, the devices were used in clinical settings to detect various brain diseases. However, as technology advances, companies such as Emotiv and NeuroSky are developing low-cost, easily portable EEG-based consumer-grade devices that can be used in various application domains such as gaming, education. This article discusses the parts in which the EEG has been applied and how it has proven beneficial for those with severe motor disorders, rehabilitation, and as a form of communi

High frequency (HF) radio wave propagation depends on the ionosphere status which is changed with the time of day, season, and solar activity conditions. In this research, ionosonde observations were used to calculate the values of maximum usable frequency (MUF) the ionospheric F2- layer during strong geomagnetic storms (Dst ≤ -100 nT) which were compared with the predicted MUF for the same layer by using IRI-16 model. Data from years 2015 and 2017, during which five strong geomagnetic storms occurred, were selected from two Japanese ionosonde stations (Kokubunji and Wakkanai) located at the mid-latitude region. The results of the present work do not show a good correlation between the observed and predicted MUF values for F2- laye

In this paper, a comparison between horizontal and vertical OFET of Poly (3-Hexylthiophene) (P3HT) as an active semiconductor layer (p-type) was studied by using two different gate insulators (ZrO₂ and PVA). The electrical performance output (I_d-V_d) and transfer (I_d-V_g) characteristics were investigated using the gradual-channel approximation model. The device shows a typical output curve of a field-effect transistor (FET). The analysis of electrical characterization was performed in order to investigate the source-drain voltage (V_d) dependent current and the effects of gate dielectric on the electrical performance of the OFET. This work also considered the effects of the

New heterocyclic compounds derived from 2-Morpholino-1,8-naphthyridine-4-carboxylic acid such as oxadiazolo, thiadiazolo – thione and triazolo-thione have been prepared and characterized on the basis of IR and 1H NMR spectra data. The hydrizide compound was utilized as a starting material for preparing of these compounds. The second part of this study involves the biological studies of some of these naphthyridine derivatives by using three different kinds of bacteria namely: Staphylococcus aureus, Pseudomonas aeruglnosa and Escherichia coli. The data indicated that some of these compounds have a good activity against the tested bacteria in comparison to antibiotics.

Churning of employees from organizations is a serious problem. Turnover or churn of employees within an organization needs to be solved since it has negative impact on the organization. Manual detection of employee churn is quite difficult, so machine learning (ML) algorithms have been frequently used for employee churn detection as well as employee categorization according to turnover. Using Machine learning, only one study looks into the categorization of employees up to date.  A novel multi-criterion decision-making approach (MCDM) coupled with DE-PARETO principle has been proposed to categorize employees. This is referred to as SNEC scheme. An AHP-TOPSIS DE-PARETO PRINCIPLE model (AHPTOPDE) has been designed that uses 2-stage MCDM s

In this paper, a comparison between horizontal and vertical OFET of Poly (3-Hexylthiophene) (P3HT) as an active semiconductor layer (p-type) was studied by using two different gate insulators (ZrO2 and PVA). The electrical performance output (Id-Vd) and transfer (Id-Vg) characteristics were investigated using the gradual-channel approximation model. The device shows a typical output curve of a field-effect transistor (FET). The analysis of electrical characterization was performed in order to investigate the source-drain voltage (Vd) dependent current and the effects of gate dielectric on the electrical performance of the OFET. This work also considered the effects of the capacitance semiconductor on the performance OFETs. The value

The derivation of 5^th order diagonal implicit type Runge Kutta methods (DITRKM5) for solving 3^rd special order ordinary differential equations (ODEs) is introduced in the present study. The DITRKM5 techniques are the name of the approach. This approach has three equivalent non-zero diagonal elements. To investigate the current study, a variety of tests for five various initial value problems (IVPs) with different step sizes h were implemented. Then, a comparison was made with the methods indicated in the other literature of the implicit RK techniques. The numerical techniques are elucidated as the qualification regarding the efficiency and number of function evaluations compared with another literature of the implic