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The intellectual contents of science fiction films
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The research consisted of four chapters, the first of which wasa methodological framework. The problem of research was determined by a question drawn up by the researcher as follows: What are the intellectual contents of science fiction films ?. The main objective of the research was to uncover the intellectual contents of contemporary science fiction films. The most important research terms (content, thought, ideology, science fiction, contemporary) were defined as either the second chapter (the theoretical framework) The second topic was entitled "The Intellectual Contents of Contemporary Science Fiction Films", in which the films of the science fiction and its current intellectual contents were discussed. The third topic included the "Transformations of Characters in Films" Fantasy J), with the focus on the personal in some science fiction movies and set covered at the level of intellectual perspective and Alabestmaologi. The third chapter (research procedures) included the community, methodology, sample and research tool, and sample analysis via the model (Super 8) 2011 by director (GJ Abrams). In the fourth chapter, the researcher reached conclusions, conclusions, suggestions and recommendations, followed by a list of sources and a Abstract  in English.

 

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Publication Date
Mon Mar 07 2022
Journal Name
Journal Of Educational And Psychological Researches
The Effect of Teaching According to the Augmented Reality Technique on theVisual Thinking Skills to Scientific Fifth-Grade Students for Biology
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The research aims to identify the effect of teaching according to the augmented reality on the technique of the visual thinking skills among scientific fifth-grade students in a biology course. In order to achieve the goal of the research, the researcher adopted the experimental approach with the partial set of the two equal groups with the dimensional test of visual thinking skills, The research population represented all the scientific students of the fifth grade for morning government schools affiliated to the General Directorate of Education of Baghdad / Karkh II, alshakerin preparatory for boys was chosen intentionally, in which two groups were chosen for this study, one group is chosen randomly as the control group via lottery, whe

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Publication Date
Sun Jan 01 2012
Journal Name
Aip Conference Proceedings
The electrical conductivity and thermoelectric power dependence on the thicknesses for thermally deposited thin CdS films
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Publication Date
Sat Dec 28 2024
Journal Name
Journal Of Physical Education
The effect of using special intense exercise accompanied by intermittent electrical stimulation to get rid of lower neck pain among professors of the College of Science - University of Baghdad for ages (40-60) years
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Lower neck pain is one of the problems facing all ages, especially the elderly, as it revolves around the causes of this pain from many diverse factors. The aim of the research is to use special intense exercise accompanied by intermittent electrical stimulation to get rid of lower neck pain among professors of the College of Science - University of Baghdad for ages. (40-60) years and to identify the extent of the effect. The research assumed the presence of statistically significant differences. The research sample represented professors at the University of Baghdad - College of Science who suffer from continuous pain for the period between (10/15/2023) and (1/15/) 2024) and their number is (5), The researchers used the experimenta

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Publication Date
Mon Mar 08 2021
Journal Name
Baghdad Science Journal
A study the electrical properties of a Se:2.5%as thin films prepared by thermal cvaporation
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thin films of se:2.5% as were deposited on a glass substates by thermal coevaporation techniqi=ue under high vacuum at different thikness

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Publication Date
Sat Dec 01 2012
Journal Name
Iraqi Journal Of Physics
Study the optical properties of CuInS2 non stoichiometric thin films prepared by chemical spray pyrolysis method
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Effect of [Cu/In] ratio on the optical properties of CuInS2 thin films prepared by chemical spray pyrolysis on glass slides at 300oC was studied. The optical characteristics of the prepared thin films have been investigated using UV-VIS spectrophotometer in the wavelength range (300-1100 nm). The films have a direct allow electronic transition with optical energy gap (Eg) decreased from 1.51 eV to 1.30 eV with increasing of [Cu/In] ratio and as well as we notice that films have different behavior when annealed the films in the temperature 100oC (1h,2h), 200oC (1h,2h) for [Cu/In]=1.4 . Also the extinction coefficient (k), refractive index (n) and the real and imaginary dielectric constants (ε1, ε2) have been investigated

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Publication Date
Sun Sep 05 2010
Journal Name
Baghdad Science Journal
Studying the effect of annealing on some electrical and optical properties for thin CdS , CdS:In films
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In the present work we prepared heterojunction not homogenous CdS/:In/Cu2S) by spray and displacement methods on glass substrate , CdS:In films prepared by different impurities constration. Cu2S prepared by chemical displacement method to improve the junction properties , structural and optical properties of the deposited films was achieved . The study shows that the film polycrystalline by XRD result for all film and the energy gap was direct to 2.38 eV with no effect on this value by impurities at this constration .

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Publication Date
Mon Oct 01 2012
Journal Name
Iraqi Journal Of Physics
Annealing temperature effect on the structural and optical properties of thermally deposited nanocrystalline CdS thin films
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A nanocrystalline CdS thin film with 100 nm thickness has been prepared by thermal evaporation technique on glass substrate with substrate temperature of about 423 K. The films annealed under vacuum at different annealing temperature 473, 523 and 573 K. The X-ray diffraction studies show that CdS thin films have a hexagonal polycrystalline structure with preferred orientation at (002) direction. Our investigation showed the grain size of thin films increased from 9.1 to 18.9 nm with increasing the annealing temperature. The optical measurements showed that CdS thin films have direct energy band gap, which decreases with increasing the annealing temperature within the range 3.2- 2.85 eV. The absorbance edge is blue shifted. The absorption

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Publication Date
Sun Jul 03 2005
Journal Name
Political Sciences Journal
التوجهات الفكرية الجديدة لانظمة دول العالم الثالث في ظل النظام العالمي الجديد : العراق نموذجاً
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التوجهات الفكرية الجديدة لانظمة دول العالم الثالث في ظل النظام العالمي الجديد : العراق نموذجاً

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Publication Date
Sun Feb 03 2019
Journal Name
Iraqi Journal Of Physics
Influence of Nd and Ce doping on the structural, optical and electrical properties of V2O5 thin films
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Nano-structural of vanadium pentoxide (V2O5) thin films were
deposited by chemical spray pyrolysis technique (CSPT). Nd and Ce
doped vanadium oxide films were prepared, adding Neodymium
chloride (NdCl3) and ceric sulfate (Ce(SO4)2) of 3% in separate
solution. These precursor solutions were used to deposit un-doped
V2O5 and doped with Nd and Ce films on the p-type Si (111) and
glass substrate at 250°C. The structural, optical and electrical
properties were investigated. The X-ray diffraction study revealed a
polycrystalline nature of the orthorhombic structure with the
preferred orientation of (010) with nano-grains. Atomic force
microscopy (AFM) was used to characterize the morphology of the
films. Un-do

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Publication Date
Sun Dec 03 2017
Journal Name
Baghdad Science Journal
Effect of Diffusion Temperature on the some Electrical Properties of CdS:In Thin Films Prepared by Vacuum Evaporation
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CdS films were prepared by thermal evaporation technique at thickness 1 µm on glass substrates and these films were doped with indium (3%) by thermal diffusion method. The electrical properties of these have been investigated in the range of diffusion temperature (473-623 K)> Activation energy is increased with diffusion temperature unless at 623 K activation energy had been decreased. Hall effect results have shown that all the films n-type except at 573 and 623 K and with increase diffusion temperature both of concentration and mobility carriers were increased.

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