Silver selenide telluride Semiconducting (Ag2Se0.8Te0.2) thin films were by thermal evaporation at RT with thickness350 nm at annealing temperatures (300, 348, 398, and 448) °K for 1 hour on glass substrates .using X-ray diffraction, the structural characteristics were calculated as a function of annealing temperatures with no preferential orientation along any plane. Atomic force microscopy (AFM) and X-ray techniques are used to analyze the Ag2SeTe thin films' physical makeup and properties. AFM techniques were used to analyze the surface morphology of the Ag2SeTe films, and the results showed that the values for average diameter, surface roughness, and grain size mutation increased with annealing temperature (116.36-171.02) nm The transm

In this work, ZnS thin films have been deposited by developed laser deposition technique on glass substrates at room temperature. After deposition process, the films were annealed at different temperatures (200ºC , 300 ºC and 400ºC ) using thermal furnace.The developed technique was used to obtain homogeneous thin films of ZnS depending on vaporization of this semiconductor material by continuous CO2 laser with a simple fan to ensure obtaining homogeneous films. ZnS thin films were annealed at temperature 200ºC, 300 ºC and 400ºC for (20) minute in vacuum environment. Optical properties of ZnS thin film such as absorbance, transmittance, reflectance, optical band gap, refractive index extinction coefficient and absorption coefficien

Preparation of superposed thin film (CdTe)1-xSex / ZnS) with concentration of (x= 0.1, 0.3, 0.5) at a temperature of substrate (Ts= 80 0C) by using Thermal Vacuum Evaporation System. The measurement of X-ray diffraction shows that the compounds CdTe, ZnS, (CdTe)1-xSex and (CdTe)1-xSex / ZnS have a polycrystalline structure, the C-V characteristic shows that the capacitance degrease by increasing the concentration (x) in reverse bias, while the I-V characteristic shows the current dark (Id) increase in forward and reverse bias by increasing (x) and the photocurrent (Iph) increase in reverse bias by increasing the concentration (x), the values of photocurrent are greater than from the values of the dark current for all concentrations

SUMMARY. – Nanocrystalline thin fi lms of CdS are deposited on glass substrate by chemical bath deposited technique using polyvinyl alcohol (PVA) matrix solution. Crystallite size of the nanocrystalline films are determining from broading of X-ray diffraction lines and are found to vary from 0.33-0.52 nm, an increase of molarity the grain size decreases which turns increases the band gap. The band gap of nanocrystalline material is determined from the UV spectrograph. The absorption edge and absorption coefficient increases when the molarity increases and shifted towards the lower wavelength.

الرؤيا واداء التشكيل في النحت العراقي المعاصر

تبلور مفهوم مركزية الانسان بالنسبة للإنسان والاعلاء من شأنه و عده قيمه أعلى من الوجود ، هذا الادراك الوجودي هو ما يسمى بالنزعة الانسانية، وتعد النزعة الانسانية هنا احد أهم التيارات التي ظهرت في الفكر السياسي الغربي الحديث، إذ تعد هذه النزعة من أهم الحركات الفكرية والتربوية التي توجت عصر النهضة الاوربي وفجرت ينابيعه الفكرية والاوربية، وعلى الرغم من إن النزعة الانسانية شكلت في عصرها ثورة فكرية شاملة على المن

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تعددت آراء المفكرين الاسلاميين المعاصرين حول الدولة الاسلامية بعد سقوط الخلافة العثمانية بصورة خاصة نتيجة لتأثر هؤلاء المفكرين بالمفاهيم التي سادت في الثقافة الغربية ، ومنها مفهوم الدولة ، حيث لم يتطرق الفكر الاسلامي الى مناقشة مفهوم الدولة الاسلامية قبل هذه الفترة ، لان اهتمامهم كان منصبا بالتظير حول موضوع السلطة . وسيتم التطرق في هذا البحث لمفهوم الدولة لدى المفكرين الاسلاميين المعاصر

مفهوم البعد الواحد في الرسم العراقي المعاصر