???? ?? ??? ????? ???? ?????? ?????????? ????? ??????? ???? ?????? ????? ??? ??? ????? ?? ???? ??? ????? ????? ???? ????? ????? ?? 0-3cm, 10cm, 20cm, 30cm, 40cm ???????? ????? ?? ???? ????? ???????? ?? ???? ????? ?????? CR-39??????? ?? ??? ??? ?????????? ???????????? ???????? ???? n.cm-2.s-1 5 x 103?? ?????? ?????????? Am241- Be??? ???? ??????? ????????? ??? ?? ???? ????? ?????????? ??? ?? ????? ??????? ?????? 0.881±0.086??? ?? ??????? ????? ??? ????? ??? ?? ????? ????? ??? ???????? ???0.441±0.036 ??? ?? ???????

The magnetic properties of a pure Nickel metal and Nickel-Zinc-Manganese ferrites having the chemical formula Ni_0.1(Zn_0.4Mn_0.6)_0.9Fe₂O₄ were studied. The phase formation and crystal structure was studied by using x-ray diffraction which confirmed the formation of pure single spinel cubic phase with space group (Fd3m) in the ferrite. The samples microstructure was studied with scanning electron microstructure and EDX. The magnetic properties of the ferrite and nickel metal were characterized by using a laboratory setup with a magnetic field in the range from 0-500 G. The ferrite showed perfect soft spinel phase behavior while the nickel sample showed higher magnetic loss an

Tetragonal compound CuAl0.4Ti0.6Se2 semiconductor has been prepared by
melting the elementary elements of high purity in evacuated quartz tube under low
pressure 10-2 mbar and temperature 1100 oC about 24 hr. Single crystal has been
growth from this compound using slowly cooled average between (1-2) C/hr , also
thin films have been prepared using thermal evaporation technique and vacuum 10-6
mbar at room temperature .The structural properties have been studied for the powder
of compound of CuAl0.4Ti0.6Se2u using X-ray diffraction (XRD) . The structure of the
compound showed chalcopyrite structure with unite cell of right tetragonal and
dimensions of a=11.1776 Ao ,c=5.5888 Ao .The structure of thin films showed

Cadmium sulfide (CdS) thin films with n-type semiconductor characteristics were prepared by flash evaporating method on glass substrates. Some films were annealed at 250 ^oC for 1hr in air. The thicknesses of the films was estimated to be 0.5µ by the spectrometer measurement. Structural, morphological, electrical, optical and photoconductivity properties of CdS films have been investigated by X-ray diffraction, AFM, the Hall effect, optical transmittance spectra and photoconductivity analysis, respectively. X-ray diffraction (XRD) pattern shows that CdS films are in the stable hexagonal crystalline structure. Using Debye Scherrerś formula, the average grain size for the samples was found to be 26 nm. The transmittance of the

Collapsible behaviour of soil is considered as one of the major problems in the stability of roadway embankment, the lack of cohesion between soil particles and its sensitivity to the change of moisture content are reasons for such problem. Creation of such cohesion may be achieved by implementation of liquid asphalt and introduction of Nano additives. In this work, silica fumes, fly ash and lime have been implemented with the aid of asphalt emulsion to improve the unconfined compressive strength of the collapsible soil. Specimens of 38 mm in diameter and 76 mm height have been prepared with various percentages of each type of Nano additive and fluid content. Specimens were subjected to unconfined compressive strength determination at dry a

In the present research, the chemical washing method has been selected using three chelating agents: citric acid, acetic acid and Ethylene Diamine Tetraacetic Acid (EDTA) to remove 137Cs from two different contaminated soil samples were classified as fine and coarse grained. The factors that affecting removal efficiency such as type of soil, mixing ratio and molarity have been investigated. The results revealed that no correlation relation was found between removal efficiency and the studied factors. The results also showed that conventional chemical washing method was not effective in removing 137Cs and that there are further studies still need to achieve this objective.

In this work, the effect of atomic ratio on structural and optical properties of SnO₂/In₂O₃ thin films prepared by pulsed laser deposition technique under vacuum and annealed at 573K in air has been studied.  Atomic ratios from 0 to 100% have been used. X-ray diffraction analysis has been utilized to study the effect of atomic ratios on the phase change using XRD analyzer and the crystalline size and the lattice strain using Williamson-Hall relationship. It has been found that the ratio of 50% has the lowest crystallite size, which corresponds to the highest strain in the lattice. The energy gap has increased as the atomic ratio of indium oxide increased.