In present work, the nonlinear optical properties of pure polyaniline and Ag/polyaniline nanocomposite thin films, deposited by plasma jet on glass substrate, were studied through open and closed Z-scan technique using pulse second harmonic Nd:YAG laser of wavelength 532nm, pulse duration of 30 ns and input energy 30mJ. The nonlinear optical properties of pure polyaniline thin films and silver polyaniline nanocomposite thin films prepared at constant gas flow rate 1lm-1 and different silver weight concentration 4, 5, and 10% were studied. The closed aperture Z-scan data indicates that the sign of the refraction nonlinearity is negative for pure polyaniline thin films n2 =11×10-3 cm2/MW and positive nonlinearity for Ag/polyaniline nanocomposite thin films, n2=72×10-3, 66×10-3 and 96×10-3 cm2/MW for silver weight concentration 4, 5, and 10% respectively. The open Z-scan measurements show two photons absorption β=75×103 cm/MW for 4%wt silver concentration and show saturated absorption for pure polyaniline, 5 and 10%wt silver concentration. The transmission spectra obtained by UV-Visible absorption spectra exhibit interference fringes, for the samples with 4% and 5%wt silver concentration which is an indication of the good uniformity and homogeneity of the films.
This work describes, selenium (Se) films were deposited on clean glass substrates by dc planar magnetron sputtering technique.The dependence of sputtering deposition rate of Se film deposited on pressure and DC power has been studied. The optimum argon pressure has range (4x10-1 -8x10-2 )mbar. The optical properties such as absorption coefficient (α) was determined using the absorbance and transmission measurement from UnicoUV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200-850 nm. And also we calculated optical constants(refractive index (n), dielectric constant (εi,r), and Extinction coefficient (κ) for selenium films.
Films of pure Poly (methyl methacrylate) (PMMA) doped by potassium iodide (KI) salt with percentages (1%) at different thickness prepared by casting method at room temperature. In order to study the effect of increasing thickness on optical properties, transmission and absorption spectra have been record for five different thicknesses(80,140,210,250,320)µm. The study has been extended to include the changes in the band gap energies, refractive index, extinction coefficient and absorption coefficient with thickness.
The real and imaginary part of complex dielectric constant for InAs(001) by adsorption of oxsagen atoms has been calculated, using numerical analysis method (non-linear least square fitting). As a result a mathematical model built-up and the final result show a fairly good agreement with other genuine published works.
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Structural, optical, and electrical properties of thin films of CdS : Zn prepared by the solution – growth technique are reported as a function of zinc concentration. CdS are window layers influencing the photovoltaic response of CIS solar cells. The zinc doping concentration was varied from 0.05 to 0.5 wt %, zinc doping apparently increase the band gap and lowers the resistivity. All beneficial optical properties of chemically deposited CdS thin films for application as window material in heterojunction optoelectronic devices are retained. Heat treatment in air at 400 °C for 1h modify crystalline structure, optical, and electrical properties of solution growth deposited CdS : Zn films.
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Tensile , thermal, and barrier properties of polylactide PLA-based
nanocomposite films that were prepared by solvent casting method with
polyethylene glycol (PEG), and alumina were studied. PLA/PEG blend showed
decrease in tensile strength and Young modulus but increased in elongation in
PLA/PEG and increased in crystalline of PLA but decrease in glass transition
temperature with the increasing of PEG concentration . A nano blend composites of
PLA/PEG/alumina (50/50/4) when compared to PLA/PEG blend indicated that
tensile strength , Young modulus and glass transition temperature (Tg) increased
with adding alumina nano particles, concentration and barrier properties
improvement due to its nucleating and reinforc
Sb-dopedAgInSe2 (AIS: 3%Sb)thin films were synthesized by thermal evaporation with a vacuum of 7*10-6torr on glass with (400+20) nm thickness. X-ray diffraction was used to show that Sb atoms were successfully incorporated into the AgInSe2 lattice. Then the thin films are annealed in air at 573 K. XRD shows that thin films AIS pure, AIS: 3%Sb and annealing at 573 K are polycrystalline with tetragonal structure with preferential orientation (112).raise the crystallinity degree. The Absorption spectra revealed that the average Absorption was more than 60% at the wavelength range of 400–700 nm. UV/Visible measure shows the lowering in energy gap to 1.4 eV forAIS: 3%Sb at 573 Kt his energy gap making these samples suitable for p
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