In this work, nanostructure porous silicon surface was prepared using electrochemical etching method under different current densities. I have studied the surface morphology and photoluminescence (PL) of three samples prepared at current densities 20, 30 and 40 mA/cm2 at fixed etching time 10 min. The atomic force microscopy (AFM) images of porous silicon showed that the nanocrystalline silicon pillars and voids over the entire surface has irregular and randomly distributed. Photoluminescence study showed that the emission peaks centered at approximately (600 – 612nm) corresponding energies (2.06 – 2.02eV).
While current-voltage characteristics shows, as the current density increase the current flow in the forward bias is decreasing, while the rectification ratio and ideality factor varied from one sample to another. Finally, as etching current density increases the built in potential (Vbi) decreases (Vbi= 0.95, 0.75 and 0.55 volt corresponding 20, 30 and 40 mA/cm2) respectively.
Cadmium oxide CdO thin films were prepared by successive ionic layer adsorption and reaction (SILAR) technique at varying number of dippings. The CdO thin films were prepared from a source material of Cadmium acetate and ammonium hydroxide solution deposited on glass substrate at 95℃. The prepared thin films were investigated by X-ray diffraction (XRD), Atomic force microscopy (AFM), Scanning Electron Microscopy (SEM), Fourier Transform Infrared (FTIR), and UV-Visible spectrometry. The XRD analysis reveals that the films were polycrystalline with cubic structure having preferential orientation along (1 1 1), (2 0 0), (2 2 0), and (3 1 1) planes. While the tests of the scanning electron microscopy and the atomic force mic
... Show MorePure and Fe-doped zinc oxide nanocrystalline films were prepared
via a sol–gel method using -
C for 2 h.
The thin films were prepared and characterized by X-ray diffraction
(XRD), atomic force microscopy (AFM), field emission scanning
electron microscopy (FE-SEM) and UV- visible spectroscopy. The
XRD results showed that ZnO has hexagonal wurtzite structure and
the Fe ions were well incorporated into the ZnO structure. As the Fe
level increased from 2 wt% to 8 wt%, the crystallite size reduced in
comparison with the pure ZnO. The transmittance spectra were then
recorded at wavelengths ranging from 300 nm to 1000 nm. The
optical band gap energy of spin-coated films also decreased as Fe
doping concentra
Nanocrystalline aluminophosphate AlPO4-5 molecular sieves were synthesized by hydrothermal method (HTS). Synthesis parameters like time and temperature of crystallization were investigated. Type of template (R) and ratio of R/P2O5 were studied also. Characterization of the synthesized AlPO4-5 were done by powder X-ray diffraction (XRD), scanning electron microscopy (SEM/EDX), Fourier transform infrared (FTIR), differential scanning calorimetry-thermogravimetry analysis (DSC-TGA), and N2 adsorption-desorption BET analysis. XRD patterns results showed excellent crystallinity for two types of templates, di-n-propylamine (DPA) and tetrapropyl ammonium hydroxide (TPAOH) f
... Show MoreThis work studies the impact of input machining parameters of Electrical Discharge Machining (EDM) on the machining process performance. Tool steel O1 was selected as the workpiece material, copper as the electrode material, and kerosene as the dielectric medium. Experimental runs have been carried out with a Design of Experiment (DOE) technique. Twenty tests are accomplished with the current range of (18 to 24 Ampere), a pulse duration range of (150 to 200 µs), and a pulse-off time range of (25 to 75 µs). Based upon the experimental study's output results, the EDM parameter's effect (voltage of power supply, discharge current, pulse duration, and pulse pause interval) on the responses of the process represented by sur
... Show MorePorous silicon (PS) layers were formed on n-type silicon (Si) wafers using Photo- electrochemical Etching technique (PEC) was used to produce porous silicon for n-type with orientation of (111). The effects of current density were investigated at: (10, 20, 30, 40, and50) mA/cm2 with etching time: 10min. X-ray diffraction studies showed distinct variations between the fresh silicon surface and the synthesized porous silicon. The maximum crystal size of Porous Silicon is (33.9nm) and minimum is (2.6nm) The Atomic force microscopy (AFM) analysis and Field Emission Scanning Electron Microscope (FESEM) were used to study the morphology of porous silicon layer. AFM results showed that root mean square (RMS) of roughness and the grain size of p
... Show MoreThe present research deals with the species Dionysia odora Fenzl.
(sy noname:Dionysia michauxii) it covers all its attributed and detailed. The plants are studied
in the college of A griculture/University of Sulaimaniya Herbar ium. The Palynology, Ecology
was given also. The sp ecimens of the plant collected and identified by Saman Abdulrahmad
Ahmad.
Thin films of (CdO)x (CuO)1-x (where x = 0.0, 0.2, 0.3, 0.4 and 0.5) were prepared by the pulsed laser deposition. The CuO addition caused an increase in diffraction peaks intensity at (111) and a decrease in diffraction peaks intensity at (200). As CuO content increases, the band gap increases to a maximum of 3.51 eV, maximum resistivity of 8.251x 104 Ω.cm with mobility of 199.5 cm2 / V.s, when x= 0.5. The results show that the conductivity is ntype when x value was changed in the range (0 to 0.4) but further addition of CuO converted the samples to p-type.
This paper addresses the substrate temperature effect on the structure, morphological and optical properties of copper oxide (CuO) thin films deposited by pulsed laser deposition (PLD) method on sapphire substrate of 150nm thickness. The films deposited at two different substrate temperatures (473 and 673)K. The atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR) and UV-VIS transmission spectroscopy were employed to characterize the size, morphology, crystalline structure and optical properties of the prepared thin films. The surface characteristics were studied by using AFM. It is found that as the substrate temperature increases, the grain size increased but the surface roughness decreased. The FTIR spec
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