Cadmium sulfide (CdS) nanocrystalline thin films are prepared onto ITO-glass and Si(111) substrates by chemical bath deposition method. The scanning electron microscope images showed that the CdS thin film onto Si substrate is more homogenous without vacancies. The XRD patterns of the CdS nanocrystalline thin film confirm that they have polycrystalline with cubic phase. Room temperature photoluminescence (PL) spectrum of the CdS nanocrystalline thin films shows emission band located at 502nm for CdS/Si sample while the CdS/ITO-glass thin films shows a broad emission band peaked at 505nm. The Raman spectra of CdS nanocrystalline thin films prepared onto Si and ITO-glass substrates contain two main peaks which are corresponding to the first and second-order longitudinal optical (LO) phonon modes.
TiO2 thin films have been deposited at different concentration of
CdO of (x= 0.0, 0.05, 0.1, 0.15 and 0.2) Wt. % onto glass substrates
by pulsed laser deposition technique (PLD) using Nd-YAG laser
with λ=1064nm, energy=800mJ and number of shots=500. The
thickness of the film was 200nm. The films were annealed to
different annealing (423 and 523) k. The effect of annealing
temperatures and concentration of CdO on the structural and
photoluminescence (PL) properties were investigated. X-ray
diffraction (XRD) results reveals that the deposited TiO2(1-x)CdOx
thin films were polycrystalline with tetragonal structure and many
peaks were appeared at (110), (101), (111) and (211) planes with
preferred orientatio
This paper reports the effect of Mg doping on structural and optical properties of ZnO prepared by pulse laser deposition (PLD). The films deposited on glass substrate using Nd:YAG laser (1064 nm) as the light source. The structure and optical properties were characterized by X-ray diffraction (XRD) and transmittance measurements. The films grown have a polycrystalline wurtzite structure and high transmission in the UV-Vis (300-900) nm. The optical energy gap of ZnO:Mg thin films could be controlled between (3.2eV and 3.9eV). The refractive index of ZnO:Mg thin films decreases with Mg doping. The extinction coefficient and the complex dielectric constant were also investigate.
Meta stable phase of SnO as stoichiometric compound is deposited utilizing thermal evaporation technique under high vacuum onto glass and p-type silicon. These films are subjected to thermal treatment under oxygen for different temperatures (150,350 and 550 °C ). The Sn metal transformed to SnO at 350 oC, which was clearly seen via XRD measurements, SnO was transformed to a nonstoichiometric phase at 550 oC. AFM was used to obtain topography of the deposited films. The grains are combined compactly to form ridges and clusters along the surface of the SnO and Sn3O3 films. Films were transparent in the visible area and the values of the optical band gap for (150,350 and 550 °C ) 3.1,
Nanocrystalline micro-mesoporous ZSM/MCM-41 composite was synthesized using alkaline treatment method and two step of crystallization in poly tetraflouroethylene (PTFE) lined autoclave. The synthesized zeolites was characterized by X-Ray diffraction (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), Atomic force microscopy (AFM), Fourier transport infrared (FTIR), and N2 adsorption-desorption (BET). It was approved that the best results for alkaline leaching can be got with 1.5M NaOH solution. High surface (BET) area of 630 m2/g with pore volume of 0.55 cm3/g has been got. AFM reports showed a nano-level size for average particle size of 50nm.
Nanocomposites of polymer material based on CdS as filler
material and poly methyl methacrylate (PMMA) as host matrix have
been fabricated by chemical spray pyrolysis method on glass
substrate. CdS particles synthesized by co-precipitation route using
cadimium chloride and thioacetamide as starting materials and
ammonium hydroxide as precipitating agent. The structure is
examined by X-ray diffraction (XRD), the resultant film has
amorphous structure. The optical energy gap is found to be (4.5,
4.06) eV before and after CdS addition, respectively. Electrical
activation energy for CdS/PMMA has two regions with values of
0.079 and 0.433 eV.
Thin films of tin disulphide SnS2 with different thicknesses (2500,4000,5000)A0 have been prepared by chemical spray pyrolises technique on substrate of glass with temperature (603)K . The effect of thickness on the optical properties of SnS2 has been studied.the optical study that includes the absorptance and transmittance spectra in the wavelength range (300900)nm demonstrated that the value of absorption coefficient (α) ) was greater than (104 cm-1) the electronic transitions at the fundamental absorption edge were of the indirect kind whether allowed and forbidden . Absorption edge shift slightly towards higher wave length.The value of energy gaps (Eg) for all the films prepared are decreased with inc
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