The thermoelectric power (S) of thermal evaporated a-InAs films

were measured in the temperature rang (303-408) K.

These films were prepared at different thickness (250,350,450) nm and treated at different annealing temperatures (303,373,423,473,523) K.

The behaviour  of the thermoelectric power  studies of these films

as  a  function  of  thickness  and  annealing  temperature  showed  the thermoelectric  power an increasing trend with annealing temperature

,whereas it decreases as the film thickness increases.

In this work; copper oxide films (CuO) were fabricated by PLD. The films were analyzed by UV-VIS absorption spectra and their thickness by using profilometer. Pulsed Nd:YAG laser was used for prepared CuO thin films under O₂ gas environment with varying both pulse energy and annealing temperature. The optical properties of   as-grown film such as optical transmittance spectrum, refractive index and energy gap has been measured experimentally and the effects of laser pulse energy  and annealing temperature on it were studied. An inverse relationship between energy gap and both annealing temperature and pulse energy was observed.

In this study, an easy, low-cost, green, and environmentally
friendlier reagents have been used to prepare CdS QDs, in chemical
reaction method by mixed different ratio of CdO and sulfur in
paraffin liquid as solvent and oleic acid as the reacting media in
different concentration to get the optimum condition of the reaction
to formation CdS QDs. The results give an indication that the
behavior is at small concentration of 4ml of the oleic acid is best
concentration which give CdS QDs of small about to 9.23 nm with
nano fiber configuration.

Silver sulfide and the thin films Ag2Se0.8Te0.2 and Ag2Se0.8S0.2 created by the thermal evaporation process on glass with a thickness of 350 nm were examined for their structural and optical properties. These films were made at a temperature of 300 K. According to the X-ray diffraction investigation, the films are polycrystalline and have an initial orthorhombic phase. Using X-ray diffraction research, the crystallization orientations of Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2 (23.304, 49.91) were discovered (XRD). As (Ag2Se and Ag2Se0.8Te0.2 & Ag2Se0.8S0.2) absorption coefficient fell from (470-774) nm, the optical band gap increased (2.15 & 2 & 2.25eV). For instance, the characteristics of thin films made of Ag2Se0.8Te0.2 and Ag2Se0.8S0.2

Indium oxide In2O3 thin films fabricated using thermal evaporation of indium metal in vacuum on a glass substrate at 25oC using array mask, after deposition the indium films have been subjected to thermal oxidation at temperature 400 °C for 1h. The results of prepared Indium oxide reveal the oxidation method as a strong effect on the morphology and optical properties of the samples as fabricated. The band gap (Eg) of In2O3 films at 400 °C is 2.7 eV. Then, SEM and XRD measurements are also used to investigate the morphology and structure of the indium oxide In2O3 thin films. The antimicrobial activity of indium oxide In2O3 thin films was assessed against gram-negative bacterium using inhibition zone of bacteria which improved higher ina

  The influence of annealing on quaternary compound Ag0.9Cu0.1InSe2 (ACIS) thin film is considered a striking semiconductor for second-generation solar cells. The film deposited by thermal evaporation with a thickness of about 700 nm at R.T and vacuum annealing at temperatures (373,473) K for 1 hour. It was deposited in a vacuum of 4.5*10-5 Torr on a glass substrate. From XRD and AFM analysis, it is evident that Ag0.9Cu0.1InSe2 films are polycrystalline in nature, having ideal stoichiometric composition. Structural analysis indicated that annealing the films following the deposition resulted in the increasing polycrystalline phase with the preferred orientation along (112) direction. , increasing crystallite size and average grain size

A cermet (ceramic-metal) composite have been prepared from alumina (γ-Al2O3) reinforced with aluminum (Al) for the concentrations of (0, 10, 20, 30, 40, & 50) wt. %Al. The cermet was formed by single axial pressing, sintered in vacuum atmosphere. Compaction behaviors were studied in solid state sintering at sintering temperatures (400, 450, & 550) °C, sintering times (2, 4, & 6) hrs., and forming pressures (5, 10, 15) MPa, also in liquid phase sintering at (800 °C). The cermet was characterized by x-ray diffraction (XRD) and by scanning electron microscope (SEM), also physical and mechanical properties have been studied. SEM results showed the Al flowing inside the ceramic body due to uniform distribution of Al particles a

     In this research, we prepared a polymer blend of polyvinylalcohol (PVA)/carrageenan/kaolinite by means of the solution cast approach. The composition of the blend was PVA in 1 gm by weight with 0.2 gm carrageenan as a plasticizer. The ratio of nanoclay varied between 1 and 5 wt%. Different properties were investigated in this study such as water vapor permeability, hardness, tear strength, color stability, thermal stability, and antibacterial activity. Water vapor permeability was decreased with increasing the ratio of nanoclay, while the values of hardness, tear strength, color stability, and thermal stability were increased. Also, the antibacterial activity examination with two types of bacteria, e.g.

Due to the specific characteristic of porcelain, the insertion of Beryllium oxide has been studied. The basic materials and quantities were selected carefully. In this work, porcelain containing 32 wt% feldspar, 24 wt% quartz and 44 wt% clay was synthesized and  beryllium oxide (BeO) (1 wt.%, 3 wt.%, 5 wt% and 7wt%) were add. The basic and new composition porcelain powders were uniaxially compacted into standard samples dimensions and fired at various sintering temperatures, 1100°C, 1300°C, and 1450°C then  held for 2 hour in a furnace.

The effects of sintering temperatures and beryllium oxide content on mechanical, electrical and structural properties were studied. The increasing of sintering temperature on the basi

The influence of silver doped n-type polycrystalline CdTe film with thickness of 200 nm and rate deposition of 0.3 nm.s -1 prepared under high vacuum using thermal co-evaporation technique on its some structural and electrical properties was reported. The X- ray analysis showed that all samples are polycrystalline and have the cubic zinc blend structure with preferential orientation in the [111] direction. Films doping with impurity percentages (2, 3, and 4) %Ag lead to a significant increase in the carrier concentration, so it is found to change from 23.493 108 cm -3 to 59.297 108 cm -3 for pure and doped CdTe thin films with 4%Ag respectively. But films doping with impurity percentages above lead to a significant decrease in the electrica